TP5335K1-G

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Document overview

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• PDF pages: 14

Technical content

Features

• High Input Impedance and High Gain
• Low Power Drive Requirement
• Ease of Paralleling
• Low C ISS and Fast Switching Speeds
• Excellent Thermal Stability
• Integral Source-Drain Diode
• Free from Secondary Breakdown

Applications

• Logic-Level Interfaces (Ideal for TTL and CMOS)
• Solid-State Relays
• Analog Switches
• Power Management
• Telecommunication Switches General Description The TP5335 is a low-threshold, Enhancement-mode (normally-off) transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Microchip’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fa st switching speeds are desired. Package Type 3-lead SOT-23 (Top view) See Table 2-1 for pin information. DRAIN SOURCE GATE P-Channel Enhancement-Mode Vertical DMOS FET

DS20005704D-page 2  2018-2022 Microchip Technology Inc. and its subsidiaries

1.0 ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings(†) †N o t i c e : Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at those or any other con- ditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. DC ELECTRICAL CHARACTERISTICS – COMMERCIAL Electrical Specifications: TA = TJ = 25°C unless otherwise specified. All DC parameters are 100% tested at 25°C unless otherwise stated. (Pulse test: 300 µs pulse, 2% duty cycle.) Parameter Sym. Min. Typ. Max. Unit Conditions Drain-to-Source Breakdown Voltage BVDSS –350 — — V V GS = 0V, ID = –100 µA Gate Threshold Voltage V GS(th) –1 — –2.4 V V DS = VGS, ID = –1 mA Change in VGS(th) with Temperature ΔVGS(th) —— 4 . 5 m V / ° C V DS = VGS, ID = –1 mA (Note 1) Gate Body Leakage I GSS — — –100 nA V GS = ±20V, VDS = 0V Zero-Gate Voltage Drain Current I DSS — — –10 µA VDS = Maximum rating, VGS = 0V —— – 1 m A VDS = Maximum rating, VGS = 0V, TA = 125°C (Note 1) On-State Drain Current I D(ON) –200 — — mA V GS = –4.5V, VDS = –25V –400 — — mA V GS = –10V, VDS = –25V Static Drain-to-Source On-State Resistance RDS(ON) —— 7 5 Ω VGS = –4.5V, ID = –150 mA —— 3 0 Ω VGS = –10V, ID = –200 mA Change in RDS(ON) with Temperature ΔRDS(ON) —— 1 . 7 % / ° C VGS = –10V, ID = –200 mA (Note 1) Note 1: Specification is obtained by characterization and is not 100% tested. DC ELECTRICAL CHARACTERISTICS – AUTOMOTIVE Electrical Specifications: Boldface specification limits apply over the full operating temperature range of TA =T J = –55°C, 25°C, and 150°C unless otherwise specified. Non-boldfaced specification limits apply only to TA =T J = 25°C unless otherwise specified. All DC parameters are 100% tested at all three temperatures unless otherwise specified. (Pulse test: 300 µs pulse, 2% duty cycle.) Parameter Sym. Min. Typ. Max. Unit Conditions Drain-to-Source Breakdown Voltage BVDSS –350 —— V V GS = 0V, ID = –100 µA Gate Threshold Voltage V GS(th) –1 — –2.4 VV DS = VGS, ID = –1 mA Change in VGS(th) with Temperature ΔVGS(th) —3 . 3 — m V / ° C V DS = VGS, ID = –1 mA (Note 1) Gate Body Leakage I GSS — — –100 nA V GS = ±20V, VDS = 0V —— –220 nA V GS = ±20V, VDS = 0V Note 1: Specification is obtained by characterization and is not 100% tested.

 2018-2022 Microchip Technology Inc. and its subsidiaries DS20005704D-page 3 TP5335 Zero-Gate Voltage Drain Current I DSS — — –10 µA VDS = Maximum rating, VGS = 0V —— –1 mA VDS = Maximum rating, VGS = 0V On-State Drain Current I D(ON) –200 —— m A V GS = –4.5V, VDS = –25V –400 — — mA V GS = –10V, VDS = –25V –375 —— m A V GS = –10V, VDS = –25V Static Drain-to-Source On-State Resistance RDS(ON) —— 75 Ω VGS = –4.5V, ID = –150 mA —— 3 0 Ω VGS = –10V, ID = –200 mA —— 70 Ω VGS = –10V, ID = –200 mA Change in RDS(ON) with Temperature ΔRDS(ON) —1 — % / ° C VGS = –10V, ID = –200 mA (Note 1) DC ELECTRICAL CHARACTERISTICS – AUTOMOTIVE (CONTINUED) Electrical Specifications: Boldface specification limits apply over the full operating temperature range of TA =T J = –55°C, 25°C, and 150°C unless otherwise specified. Non-boldfaced specification limits apply only to TA =T J = 25°C unless otherwise specified. All DC parameters are 100% tested at all three temperatures unless otherwise specified. (Pulse test: 300 µs pulse, 2% duty cycle.) Parameter Sym. Min. Typ. Max. Unit Conditions Note 1: Specification is obtained by characterization and is not 100% tested. AC ELECTRICAL CHARACTERISTICS – COMMERCIAL Electrical Specifications: TA = TJ = 25°C unless otherwise specified. Specification is obtained by characterization and is not 100% tested. Parameter Sym. Min. Typ. Max. Unit Conditions Forward Transconductance G FS 125 — — mmho V DS = –25V, ID = –200 mA Input Capacitance C ISS —— 1 1 0 p F VGS = 0V, VDS = –25V, f = 1 MHz Common Source Output Capacitance COSS —— 6 0 p F Reverse Transfer Capacitance C RSS —— 2 2 p F Turn-On Delay Time t d(ON) — — 20 ns VDD = –25V, ID = –150 mA, RGEN = 25Ω Rise Time t r — — 15 ns Turn-Off Delay Time t d(OFF) — — 25 ns Fall Time t f — — 25 ns DIODE PARAMETER Diode Forward Voltage Drop V SD — — –1.8 V VGS = 0V, ISD = –200 mA (Note 1) Reverse Recovery Time t rr —8 0 0 —n s V GS = 0V, ISD = –200 mA Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated.(Pulse test: 300 µs pulse, 2% duty cycle.)

DS20005704D-page 4  2018-2022 Microchip Technology Inc. and its subsidiaries AC ELECTRICAL CHARACTERISTICS – AUTOMOTIVE Electrical Specifications: TA = TJ = 25°C unless otherwise specified. Specification is obtained by characterization and is not 100% tested. Parameter Sym. Min. Typ. Max. Unit Conditions Forward Transconductance G FS —2 8 5 — m m h o V DS = –25V, ID = –200 mA Input Capacitance C ISS —8 0 — p F VGS = 0V, VDS = –25V, f = 1 MHz Common Source Output Capacitance COSS —1 2 — p F Reverse Transfer Capacitance C RSS —2 — p F Turn-On Delay Time t d(ON) —7 . 6 — n s VDD = –25V, ID = –150 mA, RGEN = 25Ω Rise Time t r —3 — n s Turn-Off Delay Time t d(OFF) —1 9 — n s Fall Time t f —1 0 — n s DIODE PARAMETER Diode Forward Voltage Drop V SD — — –1.8 V VGS = 0V, ISD = –200 mA (Note 1) Reverse Recovery Time t rr —4 5 0 —n s V GS = 0V, ISD = –200 mA Note 1: 100% Production Tested at TA = TJ = (–55°C, 25°C, and 150°C). TEMPERATURE SPECIFICATIONS Parameter Sym. Min. Typ. Max. Unit Conditions TEMPERATURE RANGE Operating Junction Temperature T J –55 — +150 °C Storage Temperature T S –55 — +150 °C PACKAGE THERMAL RESISTANCE 3-lead SOT-23  JA —2 0 3 — ° C / W THERMAL CHARACTERISTICS Package ID (Note 1) (Continuous) (mA) ID (Pulsed) (mA) Power Dissipation at TA = 25°C (W) IDR (Note 1) (mA) IDRM (mA) 3-lead SOT-23 –85 –400 0.36 –85 –400 Note 1: ID (continuous) is limited by maximum TJ.

 2018-2022 Microchip Technology Inc. and its subsidiaries DS20005704D-page 5 TP5335

2.0 PIN DESCRIPTION

Table 2-1 shows the description of pins in TP5335 SOT-23. Refer to Package Type for the location of pins. TABLE 2-1: PIN FUNCTION TABLE Pin Number Pin Name Description 1G a t e G a t e

2 Source Source

3 Drain Drain

DS20005704D-page 6  2018-2022 Microchip Technology Inc. and its subsidiaries

3.0 FUNCTIONAL DESCRIPTION

Figure 3-1 illustrates the switching waveforms and test circuit for TP5335. FIGURE 3-1: Switching Waveforms and Test Circuit. 90% 10% 90% 90% 10%10% Pulse Generator VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tftr INPUT RGEN INPUT OUTPUT VDD -10V TABLE 3-1: PRODUCT SUMMARY BVDSS/BVDGS (V) RDS(ON) (Maximum) (Ω) VGS(th) (Maximum) (V) –350 30 –2.4

 2018-2022 Microchip Technology Inc. and its subsidiaries DS20005704D-page 7 TP5335

4.0 PACKAGING INFORMATION

4.1 Package Marking Information

Legend: XX...X Product Code or Customer-specific information Y Year code (last digit of calendar year) YY Year code (last 2 digits of calendar year) WW Week code (week of January 1 is week ‘01’) NNN Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) * This package is Pb-free. The Pb-free JEDEC designator ( ) can be found on the outer packaging for this package. Note: In the event the full Microchip part numbe r cannot be marked on one line, it will be carried over to the next line, t hus limiting the number of available characters for customer-specific information. Package may or not include the corporate logo. 3-Lead SOT-23 (2.90 mm X 1.30 mm) P3S256 Example

DS20005704D-page 8  2018-2022 Microchip Technology Inc. and its subsidiaries 3-Lead TO-236AB (SOT-23) Package Outline (K1/T) 2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch Symbol A A1 A2 b D E E1 e e1 L L1 ș Dimension (mm) 0.95 BSC 1.90 BSC 0.20† 0.54 REF JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999. † This dimension differs from the JEDEC drawing. Drawings not to scale. View B View A - ASide View Top View View B Gauge Plane Seating Plane 0.25 L E1 E D 1 2 e b A A Seating Plane A A2

 2018-2022 Microchip Technology Inc. and its subsidiaries DS20005704D-page 9 TP5335 APPENDIX A: REVISION HISTORY Revision D (March 2022)

• Updated tables DC Electrical Characteristics – Automotive and AC Electrical Characteristics – Automotive.
• Updated Section 4.1 “Package Marking Information”.
• Updated Product Identification System format.
• Updated legal and contact information. Revision C (June 2020)
• Added automotive specificat ions to the Electrical Characteristics section.
• Added automotive specific ations to the Product Identification System section.
• Made minor text changes throughout the document. Revision B (February 2020)
• Revised the order of pins in the Pin Function Table.
• Revised the Electrical Specifications and included notes in the DC Electrical Characteristics and AC Electrical Characteristics tables.
• Made minor text changes throughout the document. Revision A (December 2018)
• Converted Supertex Doc# DSFP-TP5335 to Microchip DS20005704A.
• Made minor text changes throughout the document.

DS20005704D-page 10  2018-2022 Microchip Technology Inc. and its subsidiaries NOTES:

DS20005704D-page 11  2018-2022 Microchip Technology Inc. and its subsidiaries PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office. Examples: a) TP5335K1-G: P-Channel Enhancement-Mode Vertical DMOS FET, 3-lead SOT-23, 3000/Reel b) TP5335K1-G-VAO: P-Channel Enhancement-Mode Vertical DMOS FET, Automotive Grade, 3-lead SOT-23, 3000/ Reel, Automotive Grade Device: TP5335: P-Channel Enhancement-Mode Vertical DMOS FET Package: K1 = 3-lead SOT-23 Environmental: G = Lead (Pb)-free/RoHS-compliant Package Media Type: (Blank) = 3000/Reel for a K1 Package Qualification: (Blank) VAO = Standard Part = Automotive AEC-Q100 Qualified Environmental PART NO. -XXX PackageDevice -XXX Qualification

 2018-2022 Microchip Technology Inc. and its subsidiaries DS20005704D-page 12 TP5335 NOTES:

 2018-2022 Microchip Technology Inc. and its subsidiaries DS20005704D-page 13 This publication and the information herein may be used only with Microchip products, including to design, test, and integrate Microchip products with your application. Use of this informa- tion in any other manner violates these terms. Information regarding device applications is provided only for your conve- nience and may be superseded by updates. It is your responsi- bility to ensure t hat your applicatio n meets with your specifications. Contact your lo cal Microchip sales office for additional support or, obtai n additional support at https:// www.microchip.com/en-us/support/design-help/client-support- services. THIS INFORMATION IS PROVIDED BY MICROCHIP "AS IS". MICROCHIP MAKES NO REPRESENTATIONS OR WAR- RANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION INCLUDING BUT NOT LIMITED TO ANY IMPLIED WARRANTIES OF NON- INFRINGEMENT, MERCHANTABILITY, AND FITNESS FOR A PARTICULAR PURPOSE, OR WARRANTIES RELATED TO ITS CONDITION, QUALITY, OR PERFORMANCE. IN NO EVENT WILL MICROCHIP BE LIABLE FOR ANY INDI- RECT, SPECIAL, PUNITIVE , INCIDENTAL, OR CONSE- QUENTIAL LOSS, DAMAGE, COST, OR EXPENSE OF ANY KIND WHATSOEVER RELATED TO THE INFORMATION OR ITS USE, HOWEVER CAUSED, EVEN IF MICROCHIP HAS BEEN ADVISED OF THE POSSIBILITY OR THE DAMAGES ARE FORESEEABLE. TO THE FULLEST EXTENT ALLOWED BY LAW, MICROCHIP'S TOTAL LIABILITY ON ALL CLAIMS IN ANY WAY RELATED TO THE INFORMATION OR ITS USE WILL NOT EXCEED THE AMOUNT OF FEES, IF ANY, THAT YOU HAVE PAID DIRECTLY TO MICROCHIP FOR THE INFORMATION. Use of Microchip devices in life support and/or safety applica- tions is entirely at the buyer's risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses ar e conveyed, implicitly or otherwise, under any Microchip intellectual pr operty rights unless otherwise stated. Trademarks The Microchip name and logo, the Microchip logo, Adaptec, AnyRate, AVR, AVR logo, AVR Freaks, BesTime, BitCloud, CryptoMemory, CryptoRF, dsPIC, flexPWR, HELDO, IGLOO, JukeBlox, KeeLoq, Kleer, LANCheck, LinkMD, maXStylus, maXTouch, MediaLB, megaAVR, Microsemi, Microsemi logo, MOST, MOST logo, MPLAB, OptoLyzer, PIC, picoPower, PICSTART, PIC32 logo, PolarFire, Prochip Designer, QTouch, SAM-BA, SenGenuity, SpyNIC, SST, SST Logo, SuperFlash, Symmetricom, SyncServer, Tachyon, TimeSource, tinyAVR, UNI/O, Vectron, and XMEGA are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. AgileSwitch, APT, ClockWorks, The Embedded Control Solutions Company, EtherSynch, Flashtec, Hyper Speed Control, HyperLight Load, IntelliMOS, Libero, motorBench, mTouch, Powermite 3, Precision Edge, ProASIC, ProASIC Plus, ProASIC Plus logo, Quiet- Wire, SmartFusion, SyncWorld, Temux, TimeCesium, TimeHub, TimePictra, TimeProvider, TrueTime, WinPath, and ZL are registered trademarks of Microchip Technology Incorporated in the U.S.A. Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, Augmented Switching, BlueSky, BodyCom, CodeGuard, CryptoAuthentication, CryptoAutomotive, CryptoCompanion, CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, Espresso T1S, EtherGREEN, GridTime, IdealBridge, In-Circuit Serial Programming, ICSP, INICnet, Intelligent Paralleling, Inter-Chip Connectivity, JitterBlocker, Knob-on-Display, maxCrypto, maxView, memBrain, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, NVM Express, NVMe, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, PowerSmart, PureSilicon, QMatrix, REAL ICE, Ripple Blocker, RTAX, RTG4, SAM-ICE, Serial Quad I/O, simpleMAP, SimpliPHY, SmartBuffer, SmartHLS, SMART-I.S., storClad, SQI, SuperSwitcher, SuperSwitcher II, Switchtec, SynchroPHY, Total Endurance, TSHARC, USBCheck, VariSense, VectorBlox, VeriPHY, ViewSpan, WiperLock, XpressConnect, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. The Adaptec logo, Frequency on Demand, Silicon Storage Technology, Symmcom, and Trusted Time are registered trademarks of Microchip Technology Inc. in other countries. GestIC is a registered trademark of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2018-2022, Microchip Technology Incorporated and its subsidiar- ies. All Rights Reserved. ISBN: 978-1-6683-0092-3 Note the following details of the code protection feature on Microchip products:

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• Neither Microchip nor any other semic onductor manufacturer can guarantee the security of its code. Code protection does not mean that we are guaranteeing the product is “unbreakable”. Code protection is constantly evolving. Microchip is committed to continuously improving the code protection features of our products. For information regarding Microchip’s Quality Management Systems, please visit www.microchip.com/quality.

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