TP30 STMICROELECTRONICS | Alldatasheet

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TP30-xxx Series BIDIRECTIONAL CROWBAR PROTECTION. VOLTAGE RANGE: FROM 62 V TO 270 V. HOLDING CURRENT : IH = 150 mA min. REPETITIVE PEAK PULSE CURRENT : IPP = 30 A, 10/1000µs. JEDEC REGISTERED PACKAGE OUTLINE

FEATURES

(JEDEC DO-204AC) The TP30-xxx series has been designed to protect telecommunication equipment against lightning surges and overvoltages induced by AC power lines.

DESCRIPTION

November 1998 - Ed: 5A COMPLIES WITH THE FOLLOWING STANDARDS: Peak Surge Voltage (V) Voltage Waveform (µs) Current Waveform (µs) Admissible Ipp (A) Necessary Resistor (Ω ) (CCITT) ITU-K20 1000 10/700 5/310 25 - (CCITT) ITU-K17 1500 10/700 5/310 38 - VDE0433 2000 10/700 5/310 40 10 VDE0878 2000 1.2/50 1/20 50 - IEC-1000-4-5 level 2 level 3 1.2/50 FCC Part 68, lightning surge type A 1500 800 15.5 8.0 FCC Part 68, lightning surge type B 1000 9/720 5/320 25 - BELLCORETR-NWT-001089 First level 2500 1000 125 15.0 23.3 BELLCORETR-NWT-001089 Second level 5000 2/10 2/10 125 15.0 CNET l31-24 1000 0.5/700 0.8/310 25 -

Symbol Parameter Value Unit R th(j-l) Junction to leads 60 °C/W R th(j-a) Junction to ambient on printed circuit with standard footprint dimension 100 °C/W THERMAL RESISTANCES Symbol Parameter VRM Stand-off voltage IRM Leakage current at stand-offvoltage VR Continuous Reverse voltage VBR Breakdown voltage VBO Breakover voltage IH Holding current IBO Breakover current IPP Peak pulse current C Capacitance

ELECTRICAL CHARACTERISTICS

(Tamb =2 5°C) Symbol Parameter Value Unit P Power dissipation on infinite heatsink Tamb =5 0 °C3 W IPP Peak pulse current 10/1000 µs 8/20µs A ITSM Non repetitivesurge peak on-state current tp = 20 ms 15 A I2tI 2t value for fusing tp = 20 ms 1 A 2s dV/dt Critical rate of rise of off-state voltage V RM 5 kV/ µs Tstg Tj Storage temperature range Maximum junctiontemperature - 55 to + 150 150 TL Maximumleadtemperatureforsolderingduring 10sat5mmforcase230 °C ABSOLUTE MAXIMUM RATINGS (Tamb =2 5°C) TP30-xxx Series

Type I RM @V RM IR @V R VBO @I BO IH C max max note 1 max note 2 min note 3 typ note 4 typ note 5 µAV µAV V m A m A p F TP30-62 TP30-68 TP30-100 TP30-120 TP30-130 TP30-180 TP30-200 TP30-220 TP30-240 TP30-270 108 117 162 180 198 216 243 100 120 130 180 200 220 240 270 133 160 173 240 267 293 320 360 800 800 800 800 800 800 800 800 800 800 150 150 150 150 150 150 150 150 150 150 Note 1: IR measured at VR guarantee VBRmin ≥ VR Note 2: Measured at 50 Hz (1 cycle) - See test circuit 1. Note 3: See test circuit 2. Note 4: VR = 1V, F = 1MHz. Note 5: VR = 50V, F = 1MHz. TEST CIRCUIT 1 FOR IBO and VBO parameters: 220V static relay. 240 140 D.U.T V BO measureIBO measure tp= 20ms K Transformer 220V/800V Auto Transformer 220V/2A Vout TEST PROCEDURE : Pulse Test duration (tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. VOUT Selection - Device with VBO < 250 Volt -VOUT = 250 VRMS ,R1 = 140Ω . - Device with VBO ≥ 250 Volt -VOUT = 480 VRMS ,R2 = 240Ω . TP30-xxx Series

TEST CIRCUIT 2 for IH parameter. R -VP VBAT = - 48 V Surge generator D.U.T. This is a GO-NOGO Test which allows to confirmthe holding current (IH ) level in a functional test circuit. TEST PROCEDURE : 1) Adjust the current level at the IH value by short circuiting the AK of the D.U.T. 2) Firethe D.U.T with a surge Current : Ipp = 10A , 10/1000µs. 3) The D.U.T will come back off-state within 50 ms max. TP30-xxx Series

1E-2 1E-1 1E+0 1E+1 1E+2 1E+30 t(s) ITSM(A) F = 50Hz Fig. 1:Non repetitive surge peak on-sate current versus overload duration (Tj initial = 25°C). 0123456789 1 01 VT(V) IT(A) Tj = 25°C Fig. 4:On-state voltage versus on-state current (typical values). -40 -20 0 20 40 60 80 100 1200.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Tj(°C) IH[Tj] / IH[Tj=25°C] Fig. 2:Relative variation of holding current versus junction temperature. 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 1E-1 1E+0 1E+1 1E+2 tp(s) Zth(j-a)(°CW) Fig. 5:Variation of thermal impedance junction to ambient versus pulse duration. 1 10 100 3000.1 0.2 0.5 1.0 VR(V) C[VR]/C[VR=1V] F = 1MHz Fig. 3:Relative variation of junction capacitance versus reverse applied voltage (typical values). Note:ForVRM upper than 56V, the curve is extrapolated (dotted line) -40 -20 0 20 40 60 80 100 0.90 0.95 1.00 1.05 1.10 Tj(°C) Vbo[Tj]/Vbo[Tj=25°C] 62 V 270 V Fig. 6:Relative variation of VBO voltage versus junction temperature. TP30-xxx Series

Packaging: Tape and reel. Weight :0.40g Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of use of such information nor for any infringement of patents or otherrights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical component s in life support devices or systems without express written ap- proval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics  1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com PACKAGE MECHANICAL DATA F126 (Plastic) (JEDEC DO-204AC) A CC DD B REF. DIMENSIONS Millimeters Inches C 26 31 1.024 1.220 ORDER CODE TP 30 - 62 IPP =3 0A VOLTAGETRISIL PROTECTION MARKING : Logo, Date Code, Part Number. TP30-xxx Series