TC236 TI | Alldatasheet

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680- × 500-PIXEL CCD IMAGE SENSOR SOCS043A – JUNE 1994 – REVISED NOVEMBER 1994 Copyright  1994, Texas Instruments Incorporated 1POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

  • Very High-Resolution, 1/3-in Solid-State Image Sensor for NTSC Color Applications
  • 340,000 Pixels per Field
  • Frame Memory
  • 658 (H) × 496 (V) Active Elements in Image-Sensing Area Compatible With Electronic Centering
  • Multimode Readout Capability – Progressive Scan – Interlaced Scan – Dual-Line Readout
  • Fast Single-Pulse Clear Capability
  • Continuous Electronic Exposure Control From 1/60 – 1/50,000 s
  • 7.4-µm Square Pixels
  • Advanced Lateral-Overflow-Drain Antiblooming
  • Low Dark Current
  • High Dynamic Range
  • High Sensitivity
  • High Blue Response
  • Solid-State Reliability With No Image Burn-In, Residual Imaging, Image Distortion, Image Lag, or Microphonics

description

The TC236 is a frame-transfer, charge-coupled device (CCD) image sensor designed for use in single-chip color NTSC TV, computer, and special-purpose applications requiring low cost and small size. The image-sensing area of the TC236 is configured into 500 lines with 680 elements in each line. Twenty-two elements are provided in each line for dark reference. The blooming-protection feature of the sensor is based on an advanced lateral-overflow-drain concept. The sensor can be operated in a true-interlace mode as a 658(H) × 496(V) sensor with a very low dark current. One important feature of the TC236 very high-resolution sensor is the ability to capture a full 340,000 pixels per field. The image sensor also provides high-speed image- transfer capability. This capability allows for a continuous electronic exposure control without the loss of sensitivity and resolution inherent in other technologies. The charge is converted to signal voltage at 20 µV per electron by a high-performance structure with a reset and a voltage-reference generator. The signal is further buffered by a low-noise, two-stage, source-follower amplifier to provide high output-drive capability. The TC236 is built using TI-proprietary advanced virtual-phase (AVP) technology, which provides devices with high blue response, low dark signal, good uniformity, and single-phase clocking. The TC236 is characterized for operation from –10°C to 45°C. This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to VSS . Under no circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUT to VSS during operation to prevent damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments. ADVANCE INFORMATION concerns new products in the sampling or preproduction phase of development. Characteristic data and other specifications are subject to change without notice. ADVANCE INFORMATION

680- × 500-PIXEL CCD IMAGE SENSOR SOCS043A – JUNE 1994 – REVISED NOVEMBER 1994

2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

4 Dummy Elements

Two-Phase Image-Sensing Area 42 2 Optical Black (OPB) 4 22 658 Active Pixels Dummy Pixels

658 Active Pixels

496 Lines

500 Lines

4 Dark Lines

22 Dark Reference Pixels

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Figure 1. Image-Area Pixel Structure Figure 2. Storage-Area Pixel Structure

22 OB R G R G R G R G

22 OB G B G B G B G B SRG1

Figure 3. Color-Filter Topology Map

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684 Pulses

250 Cycles

Figure 4. Interlace Timing ‡ The readout is from register 2.

684 Pulses†

500 Cycles

500 Pulses

† Readout is from register 2. Figure 5. Progressive-Scan Timing With Single Register Readout

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Figure 6. Progressive-Scan Timing With Dual Register Readout registers are read out in parallel. by an MOS transistor and, after proper buffering, the signal is supplied to the output terminal of the image sensor. used to span the distance between the serial registers and the amplifiers.

680- × 500-PIXEL CCD IMAGE SENSOR SOCS043A – JUNE 1994 – REVISED NOVEMBER 1994

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absolute maximum ratings over operating free-air temperature range (unless otherwise noted)† † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTE 1: All voltage values are with respect to substrate terminal. recommended operating conditions MIN NOM MAX UNIT Supply voltage for amplifier drain bias, ADB 21 22 23 V Supply voltage for overflow drain antiblooming bias ODB Standard 17 18 19 VSupply voltage for overflow-drain antiblooming bias, ODB For clearing 27 28 29 V Substrate bias voltage 10 V IAG1 IAG2 High level 11.5 12 12.5 IAG1, IAG2 Low level 0 Input voltage VI SAG High level 11.5 12 12.5 VInput voltage, VI SAG Low level 0 V SRG High level 11.5 12 12.5 SRG Low level 0 IAG1, IAG2 25 Clock frequency, fclock SAG 25 MHz SRG, RST 12.5 Capacitive load OUT1, OUT2 6 pF Operating free-air temperature, TA –10 45 °C ADVANCE INFORMATION

680- × 500-PIXEL CCD IMAGE SENSOR SOCS043A – JUNE 1994 – REVISED NOVEMBER 1994 11POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 electrical characteristics over recommended operating range of supply voltage, TA = –10°C to 45°C PARAMETER MIN TYP † MAX UNIT Dynamic range (see Note 2) With CDS‡ 68 69 70 dBD ynamic range (see Note 2) Without CDS‡ 57 58 59 dB Charge conversion factor 20 µV/e Charge-transfer efficiency (see Note 3) 0.9999 0.99995 1 Signal-response delay time, τ (see Note 4) TBD ns Gamma (see Note 5) 1 Output resistance 300 400 500 Ω Noise equivalent signal With CDS‡ 8.5 10 12 electronsNoise-equivalent signal Without CDS‡ 30 36 42 electrons ADB (see Note 6) TBD Rejection ratio SRG (see Note 7) TBD dB ABG (see Note 8) TBD Supply current 5 10 mA IAG1, IAG2 2000 Input capacitance Ci SRG 70 pFInput capacitance, C i RST 10 pF SAG 4000 † All typical values are at TA = 25°C. ‡ CDS = Correlated double sampling, a signal-processing technique that improves noise performance by subtraction of reset noise. NOTES: 2. Dynamic range is –20 times the logarithm of the mean noise signal divided by saturation output signal. 3. Charge-transfer efficiency is one minus the charge loss per transfer in the output register. The test is performed in the dark using an electrical input signal. 4. Signal-response delay time is the time between the falling edge of the SRG pulse and the output-signal valid state. 5. Gamma ( γ) is the value of the exponent is the equation below for two points on the linear portion of the transfer-function curve (this value represents points near saturation). /C0466Exposure (2) Exposure (1)/C0467 /C0103 /C0043/C0466Output signal (2) Output signal (1)/C0467 6. ADB rejection ratio is –20 times the logarithm of the ac amplitude at the output divided b the ac amplitude at ADB. 7. SRG rejection ratio is –20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at SRG. 8. ABG rejection ratio is –20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at ABG. ADVANCE INFORMATION

680- × 500-PIXEL CCD IMAGE SENSOR SOCS043A – JUNE 1994 – REVISED NOVEMBER 1994

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optical characteristics, TA = 40°C, integration time = 16.67 ms (unless otherwise noted) PARAMETER MIN TYP MAX UNIT Sensitivity (see Note 9) No IR filter 256 mV/luxSensitivity (see Note 9) With IR filter 32 mV/lux Saturation signal, Vsat (see Note 10) Antiblooming disabled 600 mV Maximum usable signal, Vuse Antiblooming enabled 300 400 500 mV Blooming overload ratio (see Note 11) 1000 Image-area well capacity 22K 30K 38K electrons Smear (see Note 12) See Note 13 –78 dB Dark current TA = 21°C 0.05 nA/cm2 Dark signal TA = 60°C 1 mV Dark-signal uniformity TA = 60°C 0.5 mV Dark-signal shading TA = 60°C 0.5 mV Spurious nonuniformity Dark TA = 60°C 10 mV Spurious nonuniformity Illuminated, F#8 TA = 60°C 15 % Column uniformity 0.5 mV Electronic-shutter capability 1/50,000 1/60 s NOTES: 9. Theoretical value 10. Saturation is the condition in which further increase in exposure does not lead to further increase in output signal. 11. Blooming is the condition in which charge is induced in an element by light incident on another element. Blooming overload ratio is the ratio of blooming exposure to saturation exposure. 12. Smear is a measure of the error introduced by transferring charge through an illuminated pixel in shutterless operation. It is equivalent to the ratio of the single-pixel transfer time to the exposure time using an illuminated section that is 1/10 of the image-area vertical height with recommended clock frequencies. 13. The exposure time is 16.67 ms, the fast-dump clocking rate during vertical transfer is 12.5 MHz, and the illuminated section is 1/10 the height of the image section. ADVANCE INFORMATION

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All values are in Ω and µF unless otherwise noted. ‡ CLR is nominally 18 VDC with a 10-V pulse for image clear. Figure 11. Typical Application Circuit Diagram

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