TP0205A VISHAY | Alldatasheet

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Vishay SiliconixNew Product Document Number: 70869 S-04279—Rev. B, 16-Jul-01 www.vishay.com 11-1 P-Channel 20-V (D-S) MOSFET, Low-Threshold /C0080/C0082/C0079/C0068/C0085/C0067/C0084/C0032/C0083/C0085/C0077/C0077/C0065/C0082/C0089 VDS (V) rDS(on) (/C0087) ID (mA) /C0070/C0069/C0065/C0084/C0085/C0082/C0069/C0083 /C0068High-Side Switching /C0068Low On-Resistance: 2.6 /C0087 (typ) /C0068Low Threshold: 0.9 V (typ) /C0068Fast Switching Speed: 35 ns /C00682.5 V or Lower Operation /C0066/C0069/C0078/C0069/C0070/C0073/C0084/C0083 /C0068Ease in Driving Switches /C0068Low Offset (Error) Voltage /C0068Low-Voltage Operation /C0068High-Speed Circuits /C0068Low Battery Voltage Operation /C0065/C0080/C0080/C0076/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083 /C0068Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories /C0068Battery Operated Systems /C0068Load/Power Switching-Cell Phones, PDA SOT-363 SC-70 (6-Leads) S1 1 G 1 2 D 2 D 1 G 2 Order Number: TP0205AD SOT-323 SC-70 (3-Leads) S D G Order Number: TP0205A Marking Code: TP0205A: Al TP0205AD: Cwl w = Week Code l = Lot Traceability /C0065/C0066/C0083/C0079/C0076/C0085/C0084/C0069/C0032/C0077/C0065/C0088/C0073/C0077/C0085/C0077/C0032/C0082/C0065/C0084/C0073/C0078/C0071/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Parameter Symbol TP0205A TP0205AD Unit Drain-Source Voltage VDS –20 Gate-Source Voltage VGS /C00348 V /C0095a TA = 25/C0095C –180 Continuous Drain Current (TJ = 150/C0095C)a TA = 70/C0095C ID –140 mA Pulsed Drain Current IDM –500 TA = 25/C0095C 0.15 0.20 (Total) Maximum Power Dissipationa TA = 70/C0095C PD 0.10 0.13 (Total) W Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 /C0095C /C0084/C0072/C0069/C0082/C0077/C0065/C0076/C0032/C0082/C0069/C0083/C0073/C0083/C0084/C0065/C0078/C0067/C0069/C0032/C0082/C0065/C0084/C0073/C0078/C0071/C0083 Parameter Symbol TP0205A TP0205AD Unit Thermal resistance, Junction-to-Ambienta R thJA 833 625 (Total) /C0095C/W Notes a. Surface Mounted on FR4 Board, t /C0118 10 sec.

Vishay Siliconix New Product www.vishay.com 11-2 Document Number: 70869 S-04279— Rev. B, 16-Jul-01 /C0083/C0080/C0069/C0067/C0073/C0070/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Parameter Symbol Test Condition Min Typb Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = –10 /C0109A –20 –24 Gate-Threshold Voltage VGS(th) VDS = VGS , ID = –50 /C0109A –0.4 –0.9 –1.5 V Gate-Body Leakage IGSS VDS = 0 V, VGS = /C00348 V /C00342 /C0034100 VDS = –20 V, VGS = 0 V –0.001 –100 nA Zero Gate Voltage Drain Current IDSS VDS = –20 V, VGS = 0 V, TJ = 55/C0095C –1 /C0109A VGS = –4.5 V, VDS = –8.0 V –400 On-State Drain Currenta ID(on) VGS = –2.5 V, VDS = –5.0 V –120 mA VGS = –4.5 V, ID = –180 mA 2.6 3.8 /C0087Drain-Source On-State Resistancea rDS(on) VGS = –2.5 V, ID = –75 mA 4.0 5.0 /C0087 Forward Transconductancea gfs VDS = –2.5 V, ID = –50 mA 200 mS Diode Forward Voltagea VSD IS = –50 mA, VGS = 0 V –0.7 –1.2 V Dynamic Total Gate Charge Q g 350 450 Gate-Source Charge Q gs VDS = –5.0 V, VGS = –4.5 V, ID = –100 mA 25 pC Gate-Drain Charge Q gd 125 Input Capacitance C iss 20 Output Capacitance C oss VDS = –5.0 V, VGS = 0 V, f = 1 MHz 14 pF Reverse Transfer Capacitance C rss DS GS Switching c Turn-On Delay Time td(on) 7 12 Rise Time tr VDD = –3.0 V, RL = 100 /C0087 25 35 Turn-Off Delay Time td(off) VDD = –3.0 V, RL = 100 /C0087 ID = –0.25 A, VGEN = –4.5 V, RG = 10 /C0087 19 30 ns Fall Time tf 9 15 Notes a. Pulse test; pulse width /C0118 300 /C0109s, duty cycle /C0118 2%. VPOJ b. For design only, not subject to production testing. c. Switching time is essentially independent of operating temperature.

Vishay SiliconixNew Product Document Number: 70869 S-04279— Rev. B, 16-Jul-01 www.vishay.com 11-3 /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 0 100 200 300 400 500 600 0.6 0.8 1.0 1.2 1.4 1.6 –50 –25 0 25 50 75 100 125 150 25/C0095C TJ = –55/C0095C C rss C oss C iss VDS = –6 V ID = 80 mA VGS = –4.5 V ID = –180 mA VGS = –4.5 V VGS = –2.5 V –2 V 125/C0095C –2.5 V Output Characteristics Transfer Characteristics Gate Charge On-Resistance vs. Drain Current VDS – Drain-to-Source Voltage (V) V GS – Gate-to-Source Voltage (V) Q g – Total Gate Charge (pC) VDS – Drain-to-Source Voltage (V)ID – Drain Current (A) Capacitance On-Resistance vs. Junction Temperature TJ – Junction Temperature (/C0095C) –3 V –3.5 V –4 V 5 V 4.5 V –1.2 –1.0 –0.8 –0.6 –0.4 –0.2 0.0 0 –1 –2 –3 –4 –0.5 –0.4 –0.3 –0.2 –0.1 0.0 VGS = 0 V f = 1 MHz –10 ID – Drain Current (A) ID – Drain Current (A) rDS(on) – On-Resistance ( Ω ) C – Capacitance (pF) VGS – Gate-to-Source Voltage (V) rDS(on) – On-Resistance ( Ω ) (Normalized)

Vishay Siliconix New Product www.vishay.com 11-4 Document Number: 70869 S-04279— Rev. B, 16-Jul-01 /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 –0.2 –0.1 0.0 0.1 0.2 0.3 –50 –25 0 25 50 75 100 125 150 ID = –50 /C0109A –0.001 ID = –180 mA TJ = 150/C0095C Threshold Voltage TJ – Junction Temperature (/C0095C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD – Source-to-Drain Voltage (V) V GS – Gate-to-Source Voltage (V) –0.1 –0.01 TJ = 25/C0095C LS – Source Current (A) rDS(on) – On-Resistance ( Ω ) VGS(th) – Variance (V)