TN805 STMICROELECTRONICS | Alldatasheet

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Technical content

TN805/TN815-B® August 1998 - Ed: 1A SCR’s Symbol Parameter Value Unit IT(RMS) RMS on-state current (180° conduction angle) Tc= 105°C8 A IT(AV) Mean on-state current (180° conduction angle) Tc= 105°C5 A ITSM Non repetitive surge peak on-state current (Tj initial = 25°C) tp = 8.3 ms 73 A tp = 10 ms 70 I2tI 2t Value for fusing tp = 10ms 24.5 A 2s dI/dt Critical rate of rise of on-state current IG = 100 mA dIG /dt = 1 A/µs.

100 A/ µs

Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 Tl Maximum lead temperature for soldering during 10s 260 °C ABSOLUTE MAXIMUM RATINGS DPAK ITRMS = 8 A VDRM = 400 V to 800 V IGT ≤ 5 mA and 15 mA

FEATURES

The TN805/TN815-B serie of Silicon Controlled Rectifiers uses a high performance TOPGLASS PNPN technology. These parts are intended for general purpose applications using mount technology.

DESCRIPTION

K A A G Symbol Parameter TN805 or TN815 Unit 400B 600B 700B 800B VDRM VRRM Repetitive peak-off voltage Tj = 125°C 400 600 700 800 V

PG (AV)= 1W PGM = 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs ) VRGM = 5 V GATE CHARACTERISTICS Symbol Parameter Value Unit Rth(j-a) Junction to ambient (S=0.5cm2)7 0 °C/W Rth(j-c) Junction to case for D.C 2.5 °C/W THERMAL RESISTANCES Symbol Test Conditions Type Value Unit TN805 TN815 IGT VD = 12V (DC) RL= 33Ω Tj= 25°CM A X 5 1 5 µA VGT VD = 12V (DC) RL= 33Ω Tj= 25°C MAX 1.5 V VGD VD = VDRM RL = 3.3kΩ Tj= 125 °CM I N 0 . 2 V tgt V D = VDRM ITM = 3 x IT(AV) IG = 40mA dIG/dt = 0.5A/us Tj= 25°C TYP 2 µs IH IT= 150mA Gate open Tj= 25 °C MAX 25 30 mA IL IG = 1.2 IGT Tj= 25°C MAX 25 30 mA VTM ITM = 16A tp= 380µs Tj= 25°CM A X 1 . 6 V IDRM VDRM Rated Tj= 25°CM A X 1 0 µA IRRM VRRM Rated Tj = 125°C MAX 2 mA dV/dt Linear slope up to VD =67%V DRM Gate open Tj= 125°CM I N 5 0 1 5 0 V / µs

ELECTRICAL CHARACTERISTICS

ORDERING INFORMATION

PACKAGES : B: DPAK VDRM / VRRMSENSITIVITY TN805/TN815-B

0 1 02 03 04 05 06 07 08 09 0 1 0 0 1 1 0 1 2 0 1 3 00 Tcase(°C) IT(av)(A) D.C. α = 180° Fig. 3-1: Average and D.C. on-state current versus case temperature. 1E-3 1E-2 1E-1 1E+00.1 0.2 0.5 1.0 tp(s) K=[Zth(j-c)/Rth(j-c)] Fig. 4-1: Relative variation of thermal impedance versus pulse duration. 012345670 IT(av)(A) P(W) D.C. α = 30° α = 60° α = 90° α = 120° α = 180° 360° α Fig. 1: Maximum average power dissipation ver- sus average on-state current . 0 1 02 03 04 05 06 07 08 09 0 1 0 0 1 1 0 1 2 0 1 3 00 Tamb(°C) P(W) Tcase (°C) Rth=0°C/W Rth=37°C/W 125 110 105 115 120 α = 180° Fig. 2 : Correlation between maximum average power dissipation and maximum allowable tem- peratures (Tamb and Tcase) for different thermal resistances heatsink+contact. 0 1 02 03 04 05 06 07 08 09 0 1 0 0 1 1 0 1 2 0 1 3 00.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Tamb(°C) IT(av)(A) D.C. α = 180° Fig. 3-2: Average and D.C. on-state current versus case temperature. 1E-2 1E-1 1E+0 1E+1 1E+2 5E+20.01 0.10 1.00 tp(s) K=[Zth(j-a)/Rth(j-a)] Fig. 4-2: Relative variation of thermal impedance versus pulse duration. TN805/815-B

  • 4 0 - 2 00 2 04 06 08 0 1 0 0 1 2 00.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Tj(°C) Igt,IH[Tj]/Ig,IH[Tj=25°C] Igt IH Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature. 1 10 100 10000 Number of cycles ITSM(A) Tj initial=25°C F=50Hz Fig. 6: Non repetitive surge peak on-state current versus number of cycles. 12 5 1 010 100 300 tp(ms) ITSM(A),I²t(A²s) Tj initial=25°C ITSM I²t Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and cor- responding value of I2t. 0 2 4 6 8 10 12 14 16 18 200 100 S(Cu) (cm²) Rth(j-a) (°C/W) Fig. 9: Thermal resistance junction to ambient ver- sus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35µm). 1.0 10.0 100.0 VTM(V) ITM(A) Tj max.: Vto=0.85V Rt=46mTj=Tj max. Tj=25°C Fig. 8: On-state characteristics (maximum values). TN805/TN815-B

REF. DIMENSIONS Millimeters Inches A 2.20 2.40 0.086 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.212 C 0.45 0.60 0.017 0.023 C2 0.48 0.60 0.018 0.023 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.251 0.259 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.397 L2 0.80 0.031 L4 0.60 1.00 0.023 0.039 V2 0° 8° 0° 8° Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 6.7 6.7 6.7 1.61.6 2.32.3 FOOT PRINT DIMENSIONS (in millimeters) WEIGHT : 0.30g TYPE MARKING T805- x00B TN8 05x0 T815-x00B TN8 15x0 MARKING TN805/815-B