TN6725A FAIRCHILD | Alldatasheet
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This device is designed for applications requiring extremely high current gain at collector currents to 1A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* T A = 25°C unless otherwise noted °C-55 to +150Operating and Storage Junction Temperature RangeT J, T stg A1.2Collector Current - ContinuousIC V12Emitter-Base VoltageV EBO V60Collector-Base VoltageV CBO V50Collector-Emitter VoltageV CES UnitsValue ParameterSymbol *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle ope rations. Thermal Characteristics T A = 25°C unless otherwise noted °C/W125Thermal Resistance, Junction to AmbientR θJA °C/W50Thermal Resistance, Junction to CaseR θJC W mW/°C Total Device Dissipation Derate above 25°C P D TN6725A Units Max CharacteristicSymbol TN6725A, Rev A 1997 Fairchild Semiconductor Corporation TN6725A Discrete Power & Signal Technologies C B E TO-226
-101IC = 200 mA,V CE = 5 V, f=100MHzSmall Signal Current Gainh fe pF10V CB = 10 V, IE = 0, f = 1MHzOutput CapacitanceC cb SMALL SIGNAL CHARACTERISTICS V2IC = 1 A, V CE = 5.0 VBase-Emitter On VoltageV BE(on) V2IC = 1 A, IB = 2 mA Base-Emitter Saturation VoltageV BE(sat) V1.0 1.5 IC = 200 mA, IB = 2 mA IC = 1 A, IB = 2 mA Collector-Emitter Saturation VoltageV CE(sat) 40,000 25,000 15,000 4000 IC = 200 mA, V CE = 5 V IC = 500 mA, V CE = 5 V IC = 1A, V CE = 5 V DC Current Gainh FE ON CHARACTERISTICS* n A100V EB = 10 V Emitter Cutoff CurrentIEBO nA100V CB = 40 V Collector Cutoff CurrentICBO V12IE = 10 µAEmitter-Base Breakdown VoltageBV EBO V60IC = 100 µA Collector-Base Breakdown VoltageBV CBO V50IC = 1 mA Collector-Emitter Breakdown VoltageBV CES OFF CHARACTERISTICS UnitsMaxMinTest ConditionsParameterSymbol NPN Darlington Transistor (continued) Electrical Characteristics T A = 25°C unless otherwise noted *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0% TN6725A, Rev A 1997 Fairchild Semiconductor Corporation TN6725A