TN6719A FAIRCHILD | Alldatasheet
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Discrete POWER & Signal Technologies NPN High Voltage Amplifier TN6719A This device is designed for use in high voltage applications . Sourced from Process 48. See MPSA42 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 300 V VCBO Collector-Base Voltage 300 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Symbol Characteristic Max Units TN6719A PD Total Device Dissipation Derate above 25°C 1.0 8.0 W mW/ °C RθJC Thermal Resistance, Junction to Case 125 °C/W RθJA Thermal Resistance, Junction to Ambient 50 °C/W TO-226C B E 1997 Fairchild Semiconductor Corporation
NPN High Voltage Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 300 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 µ A, IE = 0 300 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 1.0 mA, IC = 0 7.0 V ICBO Collector Cutoff Current V CB = 200 V, IE = 0 100 nA IEBO Emitter Cutoff Current V EB = 6.0 V, IC = 0 100 nA ON CHARACTERISTICS* hFE DC Current Gain V CE = 10 V, IC = 1.0 mA VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 30 mA 40 200 VCE(sat) Collector-Emitter Saturation Voltage IC = 30 mA, IB = 3.0 mA 0.75 V VBE(on) Base-Emitter On Voltage V CE = 10 V, IC = 30 mA 0.85 V SMALL SIGNAL CHARACTERISTICS Ccb Collector-Base Capacitance V CB = 20 V, f = 1.0 MHz 3.5 pF hfe Small-Signal Current Gain I C = 15 mA, VCE = 100 V, f = 20 MHz 1.5 15 *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%