TN6714A FAIRCHILD | Alldatasheet

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NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.5 A. Sourced from Process 37. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 2.0 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C NZT6714 Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units TN6714A *NZT6714 PD Total Device Dissipation Derate above 25°C 1.0 8.0 1.0 8.0 W mW/ °C RθJC Thermal Resistance, Junction to Case 50 °C/W RθJA Thermal Resistance, Junction to Ambient 125 125 °C/W B C C SOT-223 E TO-226C B E *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. Discrete POWER & Signal Technologies  1997 Fairchild Semiconductor Corporation

Electrical Characteristics TA= 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units ON CHARACTERISTICS hFE DC Current Gain I C = 10 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC = 1.0 A, VCE = 1.0 V 50 250 VCE(sat) Collector-Emitter Saturation Voltage IC = 1.0 A, IB = 100 mA 0.5 V VBE(on) Base-Emitter On Voltage I C = 1.0 A, VCE = 1.0 V 1.2 V V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 03 0V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 µ A, IC = 0 5.0 V ICBO Collector-Cutoff Current V CB = 40 V, IE = 0 0.1 µ A IEBO Emitter-Cutoff Current V EB = 5.0 V, IC = 0 0.1 µ A SMALL SIGNAL CHARACTERISTICS hfe Small-Signal Current Gain I C = 50 mA, VCE = 10 V, f = 20 MHz 2.5 25 Ccb Collector-Base Capacitance V CB = 10 mA, IE = 0, f = 1.0 MHz 30 pF *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0% Typical Characteristics Typical Pulsed Current Gain vs Collector Current 0.001 0.01 0.1 1 100 200 300 400 500 I - COLLECTOR CURRENT (A) h - TYPICAL PULSED CURRENT GAIN FE - 40 ºC 25 °C C V = 5VCE 125 °C NPN General Purpose Amplifier (continued) Collector-Emitter Saturation Voltage vs Collector Current 0.01 0.1 1 0.01 0.1 I - COLLECTOR CURRENT (A) V - COLLECTOR-EMITTER VOLTAGE (V) CESAT C ββ = 10 125 ºC - 40 ºC 25 °C

NPN General Purpose Amplifier (continued) Typical Characteristics (continued) Base-Emitter ON Voltage vs Collector Current 1 10 100 1000 0.2 0.4 0.6 0.8 I - COLLECTOR CURRENT (mA) V - BASE-EMITTER ON VOLTAGE (V)BE(ON) 125 ºC - 4 0 ºC 25 °C C V = 5VCE Base-Emitter Saturation Voltage vs Collector Current 0.01 0.1 1 0.2 0.4 0.6 0.8 1.2 1.4 I - COLLECTOR CURRENT (A) V - BASE-EMITTER VOLTAGE (V)BESA T C ββ = 10 125 ºC - 40 ºC 25 °C Collector-Cutoff Current vs Ambient Temperature 25 50 75 100 125 150 0.1 100 T - AMBIENT TEMPERATURE ( C) I - COLLECTOR CURRENT (nA) A V = 20VCB º CBO Safe Operating Area TO-226 1 10 100 0.01 0.1 V - COLLECTOR-EMITTER VOLTAGE (V) I - COLLECTOR CURRENT (A) CE C *PULSED OPE RATION T = 25 °CA LIM IT DETERMINED BY BV CEO DC T = 25 °C COLLECTOR LEAD DC T = 25 °C AMBIENT 100 µµS* 10 µµS* 1.0 ms* Collector-Base Capacitance vs Collector-Base Voltage Pr 37 0 4 8 1 21 62 02 42 8 V - COLLECTOR-BASE VOLTAGE (V) C - COLLECTOR-BASE CAPACITANCE (pF) CBOBO Gain Bandwidth Product vs Collector Current 1 10 100 1000 100 200 300 400 500 I - COLLECTOR CURRENT (mA) h - GAIN BANDWIDTH PRODUCT (MHz)C FE V = 10VCE

Typical Characteristics (continued) NPN General Purpose Amplifier (continued) Power Dissipation vs Ambient Temperature 0 25 50 75 100 125 150 0.25 0.5 0.75 TEMPERA TURE ( C) P - POWER DISSIPATION (W) D o TO-226 SOT-223