TN6705A FAIRCHILD | Alldatasheet
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Discrete POWER & Signal Technologies NPN General Purpose Amplifier TN6705A This device is designed for use as general purpose amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. See TN6715A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 1.5 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Symbol Characteristic Max Units TN6705a PD Total Device Dissipation Derate above 25°C 1.0 8.0 W mW/ °C RθJC Thermal Resistance, Junction to Case 125 °C/W RθJA Thermal Resistance, Junction to Ambient 50 °C/W TO-226C B E 1997 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 0 45 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 mA, IE = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 1.0 mA, IC = 0 5.0 V ICBO Collector Cutoff Current V CB = 60 V, IE = 0 0.1 µA IEBO Emitter Cutoff Current V EB = 5.0 V, IC = 0 0.1 µA ON CHARACTERISTICS* hFE DC Current Gain V CE = 2.0 V, IC = 50 mA VCE = 2.0 V, IC = 250 mA VCE = 2.0 V, IC = 500 mA 250 VCE(sat) Collector-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA IC = 1.0 A, IB = 100 mA 0.5 1.0 V V VBE(on) Base-Emitter On Voltage V CE = 2.0 V, IC = 1.0 A 1.5 V SMALL SIGNAL CHARACTERISTICS Ccb Collector-Base Capacitance V CB = 10 V, f = 1.0 MHz 30 pF hfe Small-Signal Current Gain I C = 50 mA, VCE = 5.0 V, f = 20 MHz 2.5 20 *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%