TN5415A FAIRCHILD | Alldatasheet
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Discrete POWER & Signal Technologies PNP High Voltage Amplifier TN5415A This device is designed for use as high voltage drivers requiring collector currents to 100 mA. Sourced from Process 76. See MPSA92 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 200 V VCBO Collector-Base Voltage 200 V VEBO Emitter-Base Voltage 4.0 V IC Collector Current - Continuous 100 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Symbol Characteristic Max Units TN5415A PD Total Device Dissipation Derate above 25°C 1.0 8.0 W mW/ °C RθJC Thermal Resistance, Junction to Case 125 °C/W RθJA Thermal Resistance, Junction to Ambient 50 °C/W TO-226C B E 1997 Fairchild Semiconductor Corporation
PNP High Voltage Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 50 mA, IB = 0 200 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 200 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 µ A, IC = 0 4.0 V ICBO Collector Cutoff Current V CB = 175 V 50 µ A ICEX Collector Cutoff Current V CE = 200 V, VBE = 1.5 V (rev) 50 µ A ICEO Collector Cutoff Current V CE = 150 V 50 µ A IEBO Emitter Cutoff Current V EB = 4.0 V, IC = 0 20 µ A ON CHARACTERISTICS* hFE DC Current Gain V CE = 10 V, IC = 50 mA 30 150 VCE(sat) Collector-Emitter Saturation Voltage IC = 50 mA, IB = 5.0 mA 2.5 V VBE(on) Base-Emitter On Voltage I C = 50 mA, VCE = 10 V 1.5 V SMALL SIGNAL CHARACTERISTICS Cob Output Capacitance V CB = 10 V, f = 1.0 MHz 15 pF Cib Input Capacitance V EB = 5.0 V, f = 1.0 MHz 75 pF hfe Small-Signal Current Gain I C = 5.0 mA, VCE = 10 V, f = 5.0 MHz I C = 5.0 mA, VCE = 10 V, f = 1.0 kHz 3.0 Re(hie) Input Resistance V CE = 10 V, IC = 5.0 mA 300 Ω IS /b Safe Operating Area V CE = 100 V, t = 100 mS 100 mA *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%