TN5320A

TN5320A FAIRCHILD | Alldatasheet

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TN5320A — PNP High Voltage Amplifier © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com TN5320A Rev. 1.0.0 1 September 2007 TN5320A PNP High Voltage Amplifier

• This device is designed for general purpos e medium power amplifiers and switches requiring collector currents to 1.5 A.
• Sourced from Process 34. Absolute Maximum Ratings* Ta=25°C unless otherwise noted * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 75 V VEBO Emitter-Base Voltage 7 V IC Collector Current - Continuous 500 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ +150 °C Symbol Parameter Max. Units PD Total Device Dissipation Derate above 25°C 1.0 8.0 mW mW/°C RθJC Thermal Resistance, Junction to Case 125 °C/W RθJA Thermal Resistance, Junction to Ambient 50 °C/W TO-226 1. Collector 2. Base 3. Emitter

TN5320A — PNP High Voltage Amplifier © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com TN5320A Rev. 1.0.0 2 Electrical Characteristics* Ta=25×C unless otherwise noted * Pulse Test: Pulse Width ≤ 300ms, Duty Cycle = 2% NOTES: 1) All voltages (V) and currents (A) are negative polarity for PNP transistors. Symbol Parameter Test Condition Min. Max. Units Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage I C = 100mA, IB = 0 75 V ICEX Collector Cut-off Current VCE = 100 V, VBE = 1.5 V (rev.) 100 μA VCE = 70 V, VBE = 1.5 V (rev.) T = +150 °C 5 mA IEBO Emitter Cut-off Current V EB = 7.0 V 100 μA On Characteristics hFE DC Current Gain VCE = 4.0 V, IC = 0.5 mA, VCE = 2.0 V, IC = 1.0 mA, 130 VCE(sat) Collector-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA 0.5 V VBE(on) Base-Emitter Voltage VCE = 4.0 V, IC = 500 mA 1.1 V

TN5320A PNP High Voltage AmplifierTN5320A TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT D ESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHE RS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIF ICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or s ystems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FPS™ FRFET Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ Motion-SPM™ OPTOLOGIC OPTOPLANAR® PDP-SPM™ Power220® Power247® POWEREDGE® Power-SPM™ PowerTrench Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ The Power Franchise TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC UniFET™ VCX™ Datasheet Identification Product Status Definition Advance Information For mative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be pub- lished at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontin- ued by Fairchild semiconductor. The datasheet is printed for reference infor- mation only. Rev. I30 © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com TN5320A Rev. 1.0.0 3