TN41A TOSHIBA | Alldatasheet

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TOSHIBA TN41A,TN41B TOSHIBA PROGAMMABLE UNI JUNCTION TRANSISTOR = SILICON PLANAR TYPE TN41A, TN41B THYRISTOR-TRIGGER, RELAXATION OSCILLATOR, PULSER AND TIMER Unit in mm

APPLICATIONS

$5.1MAX, poimes q e Low Leakage Current : IGAQ=10nA (Max.) 3 IgKs=100nA (Max.) 0s * e High Pulse Output Voltage : VQo=10V (Typ.) 055. Fi Fi 2 0.45 ass e@ Low Peak Current : Ip=2/A (Max.) TN41A (RG=1MQ) or Ip=0.15A (Max.) TN41B (RG=1MQ) 1. 2 MAXIMUM RATINGS 2 27 cH 127 CHARACTERISTIC SYMBOL | RATING ty) z Gate-Cathode Forward Voltage VGKF a Gate-Cathode Reverse Voltage VGKR Gate-Anode Reverse Voltage Vear | 40 | V | 1 ANODE . GATE Anode-Cathode Voltage 5 oN oe DC Anode Current (Note rn JEDEC TO-92 Repetitive Peak = tw =100z8 1 Forward Current ITj™ A EIAS SC-43 (1% Duty Cycle | 2 | TOSHIBA _19-5A10 Non-Repetitive Peak Forward Weight : ight : 0.2g¢ Current (tw=10s) ITSM | 3 | A DC Gate Current Note Capacitive Discharge Energy (Note 2) 250 ud Power Dissipation Wow DP | 300 | mi] Operating Temperature —50~100 Junction Temperature =50~125 Storage Temperature Range —50~125 961001644 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual Property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 2000-04-03 1/4

TOSHIBA T™N41A,TN41B ELECTRICAL CHARACTERISTICS (Ta = 25°C) [_craracrenme bran nf Se a aN ro ae CHARACTERISTIC SYMBOL AND UNIT Peak Garvent = [os | 2 | — [oor pots |, fwseto Presi] | 88 Ss = oa ay “| pecans’ Hosea] ve | nas Heteetartisteectary | (s=10¥) v | 428 [oatoas| 0602 [045] 05 Valley Current I 123 Le 8] sof —] 7] 3] he Vv [| 228 [a a00 [a5 [ae | — | [Gate-Anode Leakage Current | Taq [& Vg=av] — [003 | 10] — [003 | 10 | aA_| [Gate-Cathode Leakage Current | Ioxs [5.Vg=40v| — | 03] 100] — | 03] 100 | nA | FRorward Voltage | Vp | Ip=80ma | — | 1] 15] —] 1] 15] V_| Pulse Output Voltage | Vo| 67 | | w]|—| 6] w]—|v ] [Pulse Voltage Rise Time | _tr [ 67 | —J[ 70] so] —[ 70] 80] ns | (Note 1) Derate linearly current and powers 1%/°C above 25°C. (Note 2) E=0.5-CV? capacitor discharge energy limiting resistor and repetition. 2000-04-03 2/4

TOSHIBA T™N41A,TN41B — Ri Re ven IA RG= Rt Ry vs| fF 2 * R Ri | 7 ‘G Vg= V H | — | =Vs i hot o= = 7 Ip ly Ip Fig.1 Programmable UJT —Fig.2 Equivalent test circuit for Fig.3 V-I electrical with program figure 1 used for electrical characteristics resistor Ry and R2 characteristic testing 9+20V ev}-----7 f lot i é g = © i Gao =—Icks “*° ' =Vs =Vg 9 oVost O6VIA i 3 a Lr] Fig.4 IGao test Fig.5 IGKs test Fig.6 Vo and t, Fig.7 Waveform of Vo circuit circuit test circuit and tr Ip - Rg (rYP,) Ip - Ta (ryP.)

10000 SS aay == SSS

5 9000S HC Pe = eee ’ Ee tt e=neo L| | & sooo NIL ETM ETT SSS SSee = ——— Re aaiiiimesiinh ven eOUHiiiaee s Cope e eee wo 2 soo NTN TT ae ===SS=SS=SSS===

5 SS Ss 5 oa SE

Fd St 2 oa fff fon | BCU) © ssieiSeieS == SESS Ea or Amari ears eae soll TS 01 0.3 1 3 10 30 100 300 1000 3000 -50 -30 -10 10 30 50 70 90 GATE SOURGE IMPEDANCE Rg (k0) AMBIENT TEMPERATURE Ta (°C) 2000-04-03 3/4

TOSHIBA T™N41A,TN41B Iy - Ta (TYP.) vr -— Ra (TYP.) _ 10 won EEE] vectev | Tt & sooo ment s oad TIM TTT 2 s SRS REE eo rel a a 2 LC a Bo SSS I ee ee | S90 100K =} & ea | Decca 6 fH TT a eae = — ns : Fee] & of 3} tt thw TT] al a A Ge A A | rH iP of LUI ET Ft -50 -30 -10 10 30 50 70 90 1 3 10 30 100 300 1000 AMBIENT TEMPERATURE Ta (°C) GATE SOURGE IMPEDANCE Rg (kQ) IGKs — Ta (TYP.) sono IGAo — Ta (TYP.) Be ES 2 1000 peppy | ||

8 MERE 2 “ESSE =e ee

2, [2 pep Pp ye | S~ sooh ttt ft ty a 2 3 A a 2 [SSeS SS SSSEr 2SSSeesi <3 a | xe === SSS 2S SS 2, ee 8S eS ag (SSS a 22 wot oo ee oe | A) == SS SS SS 6 ol 7 aes soe ce Seen @ ELLER © oo ee er ae oe Ae 8 EERE RARELY o 005 rT) -20 0 20 40 60 80 100 120 140 iar -20 0 20 40 60 80 100 120 140 AMBIENT TEMPERATURE Ta (°C) AMBIENT TEMPERATURE Ta (°C) vo-Cc Vo - Vp (TYP.) . “Tele =e J a = TLL 2 | 8s CH can € g g oe LAL eve (Teri > «(Ullal EE 2] caw |_| Flys ac eet. nl Fs wold g ST a Tool 8 egrrors | | | | | 2 16 ZCI | EU Fs Ya | | eee A= 3 jg] Tease } | ek eer Tl - TL. Ld a la SOA

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Fo Cet errnit TTTTT TTT Ey [aT ETE Ee Tari Cori +o) 1 Er] oor 0.003 0.01 0.03 01 03 1 3 10 0 10 20 30 40 50 CAPACITANCE C (yF) SUPPLY VOLTAGE Vp (V) mss sss sess 2000-04-03 41