TN4035-600G STMICROELECTRONICS | Alldatasheet

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April 2004 - Ed: 3 MAIN FEATURES:

DESCRIPTION

The TN4035-600G is designed for applications where in-rush current conditions are critical, such as overvoltage crowbar protection circuits in power supplies. Using clip assembly technology, provides higher fusing threshold than wires. Mounting precautions detailled in application note AN533 on www.st.com. Symbol Value Unit IT(RMS) 40 A VDRM/VRRM 600 V IGT 35 mA G A K A A G K D2PAK ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IT(RMS) RMS on-state current (180° conduction angle) Tc = 95°C 40 A IT(AV) Average on-state current (180° conduction angle) Tc = 95°C 25 A ITSM Non repetitive surge peak on-state current tp = 8.3 ms Tj = 25°C 480 A tp = 10 ms 460 I²tI ²t Value for fusing Tj = 25°C 1060 A2S dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 60 Hz Tj = 125°C 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125°C 4 A PG(AV) Average gate power dissipation Tj = 125°C 1 W Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 °C VRGM Maximum peak reverse gate voltage 5 V

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) THERMAL RESISTANCES * Surface under tab/Epoxy printed circuit board FR4, copper thickness 85µm

ORDERING INFORMATION

■ Epoxy meets UL94, V0 Symbol Test Conditions Value Unit IGT VD = 12 V RL = 33 Ω MIN. 3.5 mA MAX. 35 VGT MAX. 1.3 V VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C MIN. 0.2 V IH IT = 500 mA Gate open MAX. 75 mA IL IG = 1.2 IGT MAX. 150 mA dV/dt VD = 67 % VDRM Gate open Tj = 125°C MIN. 1000 V/µs VTM ITM = 80 A tp = 380 µs Tj = 25°C MAX. 1.6 V Vt0 Threshold voltage Tj = 125°C MAX. 0.85 V Rd Dynamic resistance Tj = 125°C MAX. 10 m Ω IDRM IRRM VDRM = VRRM Tj = 25°C MAX. 5 µA Tj = 125°C 4 mA Symbol Parameter Value Unit Rth(j-c) Junction to case (DC) 0.8 °C/W Rth(j-a) Junction to ambient (DC) S = 1cm 2 (*) 45 °C/W Part Number Marking Weight Base Quantity Packing mode TN4035-600G TN4035-600G 1.5 g 50 T ube TN4035-600G-TR TN4035-600G 1.5 g 1000 Tape & Reel TN 40 35 - 600 G (-TR) CURRENT: 40A VOLTAGE: 600: 600V STANDARD SCR SERIES SENSITIVITY: 35: 35mA PACKAGE: G: D PAK PACKING MODE: Blank: Tube -TR: Tape & Reel

Fig. 1: Maximum average power dissipation versus average on-state current. Fig. 2: Average and DC on-state current versus case temperature. Fig. 3: Relative variation of thermal impedance versus pulse duration. Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature. Fig. 5: Surge peak on-state current versus number of cycles. Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of I²t. 0 5 10 15 20 25 300 P(W) α = 180° IT(av)(A) 360° α 0 25 50 75 100 1250 IT(av)(A) D.C. α = 180° Tcase(°C) 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+20.01 0.10 1.00 K = [Zth/Rth] Zth(j-c) Zth(j-a) tp(s) -40 -20 0 20 40 60 80 100 120 1400.0 0.5 1.0 1.5 2.0 2.5 IGT,IH,IL [Tj] / IGT,IH,IL [Tj = 25°C] IGT IH & IL Tj(°C) 1 10 100 10000 100 150 200 250 300 350 400 450 500 ITSM(A) Non repetitive Tj initial = 25 °C Repetitive Tcase = 95 °C Number of cycles One cycle tp = 10ms 0.01 0.10 1.00 10.00100 1000 5000 ITSM(A),I2t(A2s) Tj initial = 25 °C ITSM I2t dI/dt limitattion tp(ms)

Fig. 7: On-state characteristics (maximum values). Fig. 8: Thermal resistance junction to ambient versus surface under tab (Epoxy printed circuit board FR4, copper thickness: 35µm) 100 500 ITM(A) Tj = 25°C Tj = Tj max. Tj max.: Vto = 0.85V Rd = 10mΩ VTM(V) 0 0 1 02 03 04 05 0 Rth(j-a) (°C/W) S(cm²)

D2P AK JEDEC REFERENCE: TO-263 REF. DIMENSIONS Millimeters Inches A 4.30 4.60 0.169 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.70 0.93 0.027 0.037 B2 1.25 1.40 0.048 0.055 C 0.45 0.60 0.017 0.024 C2 1.21 1.36 0.047 0.054 D 8.95 9.35 0.352 0.368 E 10.00 10.28 0.393 0.405 G 4.88 5.28 0.192 0.208 L 15.00 15.85 0.590 0.624 L2 1.27 1.40 0.050 0.055 L3 1.40 1.75 0.055 0.069 R 0.40 0.016 V2 0° 8° 0° 8° A D R 2.0 MIN. FLAT ZONE C G L B E FOOTPRINT DIMENSIONS (in millimeters) D2PAK (Plastic) 8.90 3.70 1.30 5.08 16.90 10.30 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publicati on are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without expres s written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2004 STMicroelectronics - All rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Ital y - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States http://www.st.com