TN4033A FAIRCHILD | Alldatasheet

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PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at currents to 500 mA and collector voltages up to 70V. Sourced from Process 67. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Symbol Parameter Value Units VCEO Collector-Emitter Voltage 80 V VCBO Collector-Base Voltage 80 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 1.0 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units TN4033A PD Total Device Dissipation Derate above 25°C 1.0 8.0 W mW/ °C RθJC Thermal Resistance, Junction to Case 125 °C/W RθJA Thermal Resistance, Junction to Ambient 50 °C/W TO-226C B E Discrete POWER & Signal Technologies  1997 Fairchild Semiconductor Corporation

Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS SMALL SIGNAL CHARACTERISTICS ON CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units V(BR)CEO Collector-Emitter Sustaining Voltage* IC = 10 mA, IB = 08 0V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µ A, IE = 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 5.0 V ICBO Collector-Cutoff Current V CB = 60 V, IE = 0 VCB = 60 V, IE = 0, TA = 150°C nA µ A IEBO Emitter-Cutoff Current V EB = 5.0 V, IC = 0 10 µ A Cobo Output Capacitance V CB = 10 V, IE = 0, f = 1.0 MHz 20 pF Cibo Input Capacitance V EB = 0.5 V, IC = 0, f = 1.0 MHz 110 pF hfe Small-Signal Current Gain I C = 50 mA, VCE = 10 V, f = 100 MHz 1.0 4.0 SWITCHING CHARACTERISTICS ts Storage Time I C = 500 mA, IB1 = IB2 = 50 mA 350 ns ton Turn-On Time I C = 500 mA, IB1 = 50 mA 100 ns tf Fall Time I C = 500 mA, IB1 = IB2 = 50 mA 50 ns *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0% hFE DC Current Gain IC = 100 µA, VCE = 5.0 V IC =100mA, VCE =5.0V,TA = -55°C IC = 100 mA, VCE = 5.0 V IC = 500 mA, VCE = 5.0 V IC = 1.0 A, VCE = 5.0 V 100 300 VCE(sat) Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 0.15 0.5 V V VBE(sat) Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA 0.9 V VBE(on) Base-Emitter On Voltage I C = 500 mA, VCE = 0.5 V 1.1 V PNP General Purpose Amplifier (continued)

PNP General Purpose Amplifier (continued) Base-Emitter ON Voltage vs Collector Current 0.1 1 10 50 0.2 0.4 0.6 0.8 I - COLLECTOR CURRENT (mA) V - BASE-EMITTER ON VOLTAGE (V) BE(ON) C V = 5VCE - 4 0 ºC 25 °C 125 °C Typical Pulsed Current Gain vs Collector Current 0.1 0.3 1 3 10 30 100 300 1000 100 150 200 250 300 I - COLLECTOR CURRENT (mA) h - TYPICAL PULSED CURRENT GAIN C FE 125 °C 25 °C - 40 °C V = 5VCE Collector-Emitter Saturation Voltage vs Collector Current 10 100 1000 0.2 0.4 0.6 I - COLLECTOR CURRENT (mA) V - COLLECTOR-EMITTER VOLTAGE (V) CESAT - 40 ºC 25 °C C ββ = 10 125 °C Base-Emitter Saturation Voltage vs Collector Current P6 7 10 100 1000 0.4 0.6 0.8 1.2 I - COLLECTOR CURRENT (mA) V - BASE-EMITTER VOLTAGE (V)BESA T C ββ = 10 - 40 ºC 25 °C 125 °C Collector-Cutoff Current vs Ambient Temperature 25 50 75 100 125 150 0.1 100 T - AMBIENT TEMPERATURE ( C) I - COLLECTOR CURRENT (nA) A V = 50VCB º CBO Collector-Base and Emitter-Base Capacitance vs Reverse Bias Voltage 0.1 1 10 50 100 200 500 REVERSE BIAS VOLTAGE (V) CAPACITANCE (pF) C obo C ibo f = 1.0 MHz

Typical Characteristics (continued) PNP General Purpose Amplifier (continued) Switching Times vs Collector Current 1 2 20 100 200 120 160 200 240 I - COLLECTOR CURRENT (mA) TIME (ns) C V = -1.0VCE V = -10VCE Turn On and Turn Off Times vs Collector Current 10 100 500 1000 100 200 300 400 500 I - COLLECTOR CURRENT (mA) TIME (ns) I = I = I V = - 30V 10 toff t B1 CB2 CC on C Power Dissipation vs Ambient Temperature 0 25 50 75 100 125 150 0.25 0.5 0.75 TEMPERATURE ( C) P - POWER DISSIPA TION (W) D o TO-226