TN3440A FAIRCHILD | Alldatasheet

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NPN General Purpose Amplifier Absolute Maximum Ratings* TA = 25°C unless otherwise noted This device is designed for use in horizontal driver, class A off-line amplifier and off-line switching applications. Sourced from Process 36. Symbol Parameter Value Units VCEO Collector-Emitter Voltage 250 V VCBO Collector-Base Voltage 300 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current - Continuous 100 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units TN3440A PD Total Device Dissipation Derate above 25°C 1.0 8.0 W mW/ °C RθJC Thermal Resistance, Junction to Case 125 °C/W RθJA Thermal Resistance, Junction to Ambient 50 °C/W TO-226C B E Discrete POWER & Signal Technologies  1997 Fairchild Semiconductor Corporation

NPN General Purpose Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units VCEO( sus) Collector-Emitter Sustaining Voltage* IC = 50 mA, IB = 0 250 V V(BR)CBO Collector-Base Breakdown VoltageIC = 100 µA, IE = 0 300 V ICEO Collector-Cutoff Current V CE = 200 V, IB = 0 50 µ A ICEX Collector-Cutoff Current V CE = 300 V, VBE = 1.5 V 500 µ A ICBO Collector-Cutoff Current V CB = 250 V, IE = 0 20 µ A IEBO Emitter-Cutoff Current V EB = 5.0 V, IC = 0 20 µ A ON CHARACTERISTICS SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 10 V, f = 5.0 MHz

15 MHz

Cobo Output Capacitance V CB = 10 V, IE = 0, f = 1.0 MHz 10 pF Cibo Input Capacitance V BE = 5.0 V, IC = 0, f = 1.0 MHz 95 pF hfe Small-Signal Current Gain I C = 5.0 mA, VCE = 10 V, f = 1.0 kHz DC Typical Characteristics *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0% Collector-Emitter Saturation Voltage vs Collector Current P3 6 1 10 100 1000 0.1 0.2 0.3 I - COLLECTOR CURRENT (mA) V - COLLECTOR-EMITTER VOLTAGE (V)CESAT - 40 ºC 25 °C C ββ = 10 125 °C Typical Pulsed Current Gain vs Collector Current P3 6 0.001 0.01 0.1 1 100 1000 I - COLLECTOR CURRENT (A) h - TYPICAL PULSED CURRENT GAIN FE - 40 ºC 25 °C C V = 5VCE 125 °C hFE DC Current Gain I C = 2.0 mA, VCE = 10 V IC = 20 mA, VCE = 10 V 40 160 VCE(sat) Collector-Emitter Saturation Voltage IC = 50 mA, IB = 4.0 mA 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC = 50 mA, IB = 4.0 mA 1.3 V

DC Typical Characteristics (continued) Base-Emitter Saturation Voltage vs Collector Current Pr36 1 10 100 1000 200 400 600 800 1000 I - COLLECTOR CURRENT (mA) V - BASE-EMITTER VOLTAGE (mV)BESAT C ββ = 10 - 40 ºC 25 °C 125 °C Base-Emitter ON Voltage vs Collector Current P3 6 1 10 100 1000 200 400 600 800 1000 I - COLLECTOR CURRENT (mA) V - BASE-EMITTER ON VOLTAGE (mV) BE(ON) C V = 5VCE - 40 ºC 25 °C 125 °C AC Typical Characteristics Contours of Constant Gain Bandwidth Product (fT) Collector-Base / Emitter-Base Capacitance vs. Reverse Bias Voltage Collector-Cutoff Current vs Ambient Temperature P3 6 25 50 75 100 125 150 0.1 100 T - AMBIENT TEMPERA TURE ( C) I - COLLECTOR CURRENT (nA) A V = 225VCB º CBO NPN General Purpose Amplifier (continued)

NPN General Purpose Amplifier (continued) AC Typical Characteristics (continued) TO-226 POWER DISSIPATION vs AMBIENT TEMPERATURE 0 25 50 75 100 125 150 0.25 0.5 0.75 TEMPERATURE ( C) P - POWER DISSIPA TION (W) D o Safe Operating Area TO-226