TN3019A

TN3019A FAIRCHILD | Alldatasheet

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NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Symbol Parameter Value Units VCEO Collector-Emitter Voltage 80 V VCBO Collector-Base Voltage 140 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current - Continuous 1.0 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units TN3019A PD Total Device Dissipation Derate above 25°C 1.0 8.0 W mW/ °C RθJC Thermal Resistance, Junction to Case 125 °C/W RθJA Thermal Resistance, Junction to Ambient 50 °C/W TO-226C B E Discrete POWER & Signal Technologies  1997 Fairchild Semiconductor Corporation

NPN General Purpose Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS SMALL SIGNAL CHARACTERISTICS ON CHARACTERISTICS *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0% Symbol Parameter Test Conditions Min Max Units V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 30 mA, IB = 08 0V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 140 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 µ A, IC = 0 7.0 V ICBO Collector-Cutoff Current V CB = 90 V, IE = 0 VCB = 90 V, IE = 0, TA = 150°C 0.01 µ A µ A IEBO Emitter-Cutoff Current V EB = 5.0 V, IC = 0 0.01 µ A hFE DC Current Gain I C = 0.1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V IC =150 mA, VCE =10 V,TA = -55°C IC = 500 mA, VCE = 10 V* IC = 1.0 A, VCE = 10 V* 100 300 VCE(sat) Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 0.2 0.5 V V VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 1.1 V fT Current Gain - Bandwidth Product IC = 50 mA, VCE = 10 V, f = 20 MHz

100 MHz

Cobo Output Capacitance V CB = 10 V, IE = 0, f = 1.0 MHz 12 pF Cibo Input Capacitance V BE = 0.5 V, IC = 0, f = 1.0 MHz 60 pF hfe Small-Signal Current Gain I C = 1.0 mA, VCE = 5.0 V, f = 1.0 MHz 80 400 rb’Cc Collector Base Time Constant I E = 10 mA, VCB = 10 V, f = 4.0 MHz 400 pS NF Noise Figure I C = 100 mA, VCE = 10 V, R S = 1.0 kΩ , f = 1.0 kHz 4.0 dB

Collector-Emitter Saturation Voltage vs Collector Current P1 2 0.1 1 10 100 1000 0.2 0.4 0.6 0.8 1.2 I - COLLECTOR CURRENT (mA) V - COLLECTOR EMITTER VOLTAGE (V)CCESA T 25 °C - 40 ºC 125 ºC ββ = 10 Base-Emitter Saturation Voltage vs Collector Current 0.1 1 10 100 1000 0.4 0.8 I - COLLECTOR CURRENT (mA) V - BASE EMITTER VOLTAGE (V) C BESA T ββ = 10 25 °C - 40 ºC 125 ºC NPN General Purpose Amplifier (continued) Collector-Cutoff Current vs. Ambient Temperature 25 50 75 100 125 0.1 T - AMBIENT TEMPERA TURE ( C) I - COLLECTOR CURRENT (nA) A CBO º V = 80VCB Typical Pulsed Current Gain vs Collector Current 0.1 0.3 1 3 10 30 100 300 1000 100 150 200 250 300 350 I - COLLECTOR CURRENT (mA) h - TYPICAL PULSED CURRENT GAIN C FE 125 °C 25 °C - 40 °C V = 1VCE Base Emitter ON Voltage vs Collector Current P1 2 0.1 1 10 100 1000 0.2 0.4 0.6 0.8 I - COLLECTOR CURRENT (mA) V - BASE EMITTER ON VOLTAGE (V) C BEON V = 1VCE 25 °C - 40 ºC 125 ºC Collector-Base and Emitter-Base Capacitance vs Reverse Bias Voltage P1 2 0.1 1 10 50 100 REVERSE BIAS VOLTAGE (V) CAPACITANCE (pF) C cb C eb f = 1.0 MHz

NPN General Purpose Amplifier (continued) Typical Characteristics (continued) Power Dissipation vs Ambient Temperature 0 25 50 75 100 125 150 0.25 0.5 0.75 TEMPERATURE ( C) P - POWER DISSIPA TION (W) D o TO-226 Small Signal Current Gain at 20 MHz P1 2 11 0 1 0 0 5 0 0 I - COLLECTOR CURRENT (mA) h - SMALL SIGNAL CURRENT GAIN f = 20 MHz V = 1.0VCE V = 10VCE C FE Switching Times vs Collector Current 10 100 500 1000 200 400 600 800 1000 I - COLLECTOR CURRENT (mA) TIME (ns) tf C tdtr ts Turn On and Turn Off Times vs Collector Current P1 2 10 100 500 1000 200 400 600 800 1000 I - COLLECTOR CURRENT (mA) TIME (ns) I = I = I V = 50V 10 tofft B1 CB2 CC on C

NPN General Purpose Amplifier (continued) Test Circuit To Sampling Scope Rise Time ≤ 5.0 ns Input Z ≈ 100 kΩ Pulse Source Rise Time ≤ 5.0 ns Fall Time ≤ 10 ns

1.0 KΩΩΩΩΩ

• 4.0 V 50 V 50 ΩΩΩΩΩ R b - 1 µµµµµF 1.5 µµµµµS 0 V 10 V R L Rb R LIC 314 Ω 157 Ω 94 Ω 150 mA 200 mA 500 mA 330 Ω 167 Ω 100 Ω FIGURE 1: tON , tOFF Test Circuit