TN2540-600G-TR

TN25 STMICROELECTRONICS | Alldatasheet

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Technical content

April 2002 - Ed: 4A MAIN FEATURES:

DESCRIPTION

The TYN / TN25 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities. Symbol Value Unit IT(RMS) 25 A VDRM /VRRM 600 to 1000 V IGT 40 mA ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IT(RMS) RMS on-state current (180° conduction angle) Tc = 100°C 25 A T(AV) Average on-state current (180° conduction angle) Tc = 100°C 16 A ITSM Non repetitive surge peak on-state current tp = 8.3 ms Tj = 25°C 314 A tp = 10 ms 300 I²tI ²t Value for fusing tp = 10 ms Tj = 25°C 450 A2S dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 60 Hz Tj = 125°C 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125°C 4 A PG(AV) Average gate power dissipation Tj = 125°C 1 W Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 °C VRGM Maximum peak reverse gate voltage 5 V A K G D 2PAK (TN25-G) G A A K TO-220AB (TYN) A A G K

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) THERMAL RESISTANCES S = Copper surface under tab PRODUCT SELECTOR Symbol Test Conditions Value Unit IGT VD = 12 V RL = 33 Ω MIN. 4 mA MAX. 40 VGT MAX. 1.3 V VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C MIN. 0.2 V IH IT = 500 mA Gate open MAX. 50 mA IL IG = 1.2 IGT MAX. 90 mA dV/dt VD = 67 % VDRM Gate open Tj = 125°C MIN. 1000 V/µs VTM ITM = 50 A tp = 380 µs Tj = 25°C MAX. 1.6 V Vt0 Threshold voltage Tj = 125°C MAX. 0.77 V R d Dynamic resistance Tj = 125°C MAX. 14 m Ω IDRM IRRM VDRM = VRRM Tj = 25°C MAX. 5 µA Tj = 125°C 4 mA Symbol Parameter Value Unit R th(j-c) Junction to case (DC) 1.0 °C/W R th(j-a) Junction to ambient (DC) TO-220AB 60 °C/W S = 1 cm² D ²PAK 45 Part Number Voltage (xxx) Sensitivity Package

600 V 800 V 1000 V

TN2540-xxxG X X X 40 mA D ²PAK TYNx25 X X X 40 mA TO-220AB

ORDERING INFORMATION

TN 25 40 - 600 G (-TR) STANDARD SCR SERIES CURRENT: 25A SENSITIVITY: 40: 40mA VOLTAGE: 600: 600V 800: 800V 1000: 1000V PACKAGE: G: D PAK PACKING MODE: Blank: Tube -TR: Tape & Reel TYN 6 25 (RG) CURRENT: 25A VOLTAGE: 6: 600V 8: 800V 10: 1000V STANDARD SCR SERIES PACKING MODE Blank: Bulk RG: Tube OTHER INFORMATION Note: x = voltage Part Number Marking Weight Base Quantity Packing mode TN2540-x00G TN2540x00G 1.5 g 50 T ube TN2540-x00G-TR TN2540x00G 1.5 g 1000 Tape & reel TYNx25 TYNx25 2.3 g 250 Bulk TYNx25RG TYNx25 2.3 g 50 T ube

Fig. 1: Maximum average power dissipation versus average on-state current. Fig. 2-1: Average and D.C. on-state current versus case temperature. Fig. 2-2: Average and D.C. on-state current versus ambient temperature (copper surface under tab: S = 1 cm² (for D²P AK). Fig. 3: Relative variation of thermal impedance versus pulse duration. Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature. Fig. 5: Surge peak on-state current versus number of cycles. 02468 1 0 1 2 1 4 1 60 P(W) a = 180° IT(av)(A) 360° a 0 25 50 75 100 1250 IT(av)(A) D.C. a = 180° Tcase(°C) 0 25 50 75 100 1250.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 IT(av)(A) D.C. a = 180° Tamb( °C) 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+20.01 0.10 1.00 K = [Zth/Rth] Zth(j-c) Zth(j-a) tp(s) -40 -20 0 20 40 60 80 100 120 1400.0 0.5 1.0 1.5 2.0 2.5 IGT,IH,IL [Tj] / IGT,IH,IL [Tj = 25 °C] IGT IH & IL Tj(°C) 1 10 100 100 00 100 150 200 250 300 350 ITSM(A) Non repetitiv e Tj initial = 25 °C Repetitive Tcase = 100 °C Number of cycles One cycle tp = 10ms

Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding values of I²t. Fig. 7: On-state characteristics (maximum values). Fig. 8: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35µm) 2PAK). 0.01 0.10 1.00 10.00100 1000 2000 ITSM(A),I2t(A2s) Tj initial = 25 °C ITSM I2t dI/dt limitattion tp(ms) 100 300 ITM(A) Tj = 25°C Tj = Tj max. Tj max.: Vto = 0.77V Rd = 14mW VTM(V) 0 4 8 1 21 62 02 42 83 23 64 00 Rth(j-a)(°C/W) S(cm 2)

D 2PAK (Plastic) REF . DIMENSIONS Millimeters Inches A 4.30 4.60 0.169 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.70 0.93 0.027 0.037 B2 1.25 1.40 0.048 0.055 C 0.45 0.60 0.017 0.024 C2 1.21 1.36 0.047 0.054 D 8.95 9.35 0.352 0.368 E 10.00 10.28 0.393 0.405 G 4.88 5.28 0.192 0.208 L 15.00 15.85 0.590 0.624 L2 1.27 1.40 0.050 0.055 L3 1.40 1.75 0.055 0.069 R 0.40 0.016 V2 0° 8° 0° 8° A D R 2.0 MIN. FLAT ZONE C G L B E FOOTPRINT DIMENSIONS (in millimeters) D 2PAK (Plastic) 8.90 3.70 1.30 5.08 16.90 10.30

TO-220AB (Plastic) M B C A F L I e REF . DIMENSIONS Millimeters Inches A 15.20 15.90 0.598 0.625 a1 3.75 0.147 a2 13.00 14.00 0.511 0.551 B 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 C 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 2.40 2.70 0.094 0.106 F 6.20 6.60 0.244 0.259 I 3.75 3.85 0.147 0.151 L 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 M 2.60 0.102 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Isreal - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com