TN1625-G STMICROELECTRONICS | Alldatasheet

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TN1625-G January 1998 - Ed: 4 SCR Symbol Parameter Value Unit IT(RMS) RMS on-state current (180° conductionangle) Tc= 110°C1 6 A IT(AV) Average on-state current (180° conductionangle) Tc= 110°C1 0 A ITSM Non repetitive surge peak on-state current tp = 8.3 ms 199 A (Tj initial = 25°C) tp = 10 ms 190 I2tI 2t Value for fusing tp = 10ms 180 A 2s dI/dt Critical rate of rise of on-state current IG = 100 mA dI G /dt = 1 A/µs.

100 A/ µs

Storage junction temperature range Operatingjunction temperaturerange - 40 to + 150 - 40 to + 125 Tl Maximum temperature for soldering during 10 s 260 °C ABSOLUTE MAXIMUM RATINGS D 2PAK HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITYAND RELIABILITY

FEATURES

The TN1625 series of Silicon Controlled Rectifiers uses a high performance glass passivated tech- nology. This SCR is designed for power supplies up to 400Hz on resistive or inductiveload.

DESCRIPTION

K A G A Symbol Parameter TN1625- Unit 600G 800G VDRM VRRM Repetitive peak off-state voltage Tj = 125°C 600 800 V

PG (AV)=1 W P GM = 10 W (tp = 20µs) I GM = 4 A (tp = 20µs) V RGM =5 V GATE CHARACTERISTICS Symbol Parameter Value Unit Rth(j-a) Junction to ambient (S=1cm2)4 5 °C/W Rth(j-c) Junction to case for D.C 1.1 °C/W THERMAL RESISTANCES Symbol Test Conditions Type Value Unit IGT VD = 12V (DC) RL=3 3Ω Tj= 25°C MIN 3 mA MAX 25 VGT VD = 12V (DC) RL=3 3Ω Tj= 25°C MAX 1.3 V VGD VD =V DRM R L = 3.3kΩ Tj= 125°C MIN 0.2 V IH IT= 100mA Gate open Tj= 25 °C MAX 40 mA IL IG = 1.2 IGT Tj= 25°C MAX 60 mA VTM ITM = 32A tp= 380µs Tj= 25 °C MAX 1.5 V IDRM VD =V DRM Tj= 25°C MAX 5 µA IRRM VR =V RRM Tj= 125°C MAX 2 mA dV/dt V D =67%V DRM Gate open Tj= 125 °C MIN 500 V/ µs

ELECTRICAL CHARACTERISTICS

ORDERING INFORMATION

PACKAGES : G: D2PAK VOLTAGESENSITIVITY Add ”-TR” suffix for Tape & Reel shipment TN1625-G

I (A) T(AV) D.C. α=180° Tcase(°C) Fig. 3:Average and D.C. on-state current versus case temperature. -40 -20 0 20 40 60 80 100 120 140 0.0 0.5 1.0 1.5 2.0 2.5 I ,I [Tj]/I ,I [Tj=25°C] GT H GT H IGT IH Tj(°C) Fig.5:Relativevariation of gate triggercurrentand holding current versus junction temperature. 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 0.01 0.10 1.00 K=[Zth/Rth] Zth(j-c) Zth(j-a) tp(s) Fig. 4:Relative variation of thermal impedance versus pulse duration. 1 10 100 1000 120 160 200 I (A) TSM Tj initial=25°C F=50Hz Number of cycles Fig. 6:Non repetitive surge peak on-state current versus number of cycles. 02468 1 0 1 2 1 4 1 6 P(W) α =180° α=120° α=90° α =60° α =30° D.C. I (A)T(AV) Fig. 1:Maximum average power dissipation ver- sus average on-state current . 125 0 20 40 60 80 100 120 140 P(W) Tcase ( °C) α =180° Rth=0°C/WRth=2°C/WRth=4°C/WRth=6°C/W 110 115 120 Tamb( °C) Fig. 2 :Correlation between maximum average power dissipation and maximum allowabletem- peratures (Tamb and Tcase) for different thermal resistances heatsink+contact. TN1625-G

0 4 8 12 16 20 24 28 32 36 400 Rth(j-a) (°C/W) S(Cu) (cm ) Fig. 9:Thermal resistance junction to ambient ver- sus coppersurfaceunder tab (Epoxyprinted circuit board FR4, copper thickness: 35µm). 12 5 1 0 100 200 500 1000 I (A),I t(A s)TSM Tj initial=25°C ITSM I t tp(ms) Fig. 7:Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and cor- respondingvalue of I2t. 012345 100 200 I (A)TM Tj=25°C Tj=Tj max. Tj max.: Vto=0.77V Rt=23m Ω V (V)TM Fig. 8:On-statecharacteristics(maximumvalues). 0 40 80 120 160 200 240 280 320 360 T( °C) 250 200 150 100 Epoxy FR4 board Metal-backed board 245°C 215°C t (s) Fig. 10:Typical reflow soldering heat profile, either for mounting on FR4 or metal-backedboards. TN1625-G

A D R 2.0 MIN. FLAT ZONE C G L B E REF. DIMENSIONS Millimeters Inches A 4.30 4.60 0.169 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.70 0.93 0.027 0.037 B2 1.40 0.055 C 0.45 0.60 0.017 0.024 C2 1.21 1.36 0.047 0.054 D 8.95 9.35 0.352 0.368 E 10.00 10.28 0.393 0.405 G 4.88 5.28 0.192 0.208 L 15.00 15.85 0.590 0.624 L2 1.27 1.40 0.050 0.055 L3 1.40 1.75 0.055 0.069 R 0.40 0.016 V2 0 ° 8° 0° 8° MARKING: TN1625 x00G Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorizedfor use as critical componentsin life support devices or systems without express written approval of SGS-THOMSON Microelectronics.  1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 8.90 3.70 1.30 5.08 16.90 10.30 FOOT PRINT DIMENSIONS (in millimeters) TN1625-G