TN0205A/AD

TN0205A-T1 VISHAY | Alldatasheet

Document overview

• Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
• PDF pages: 5

Technical content

Vishay SiliconixNew Product Document Number: 70868 S-04279—Rev. B, 16-Jul-01 www.vishay.com 11-1 N-Channel 20-V MOSFET /C0080/C0082/C0079/C0068/C0085/C0067/C0084/C0032/C0083/C0085/C0077/C0077/C0065/C0082/C0089 VDS (V) rDS(on) (/C0087) ID (mA) 2.0 @ VGS = 4.5 V 250 20 2.5 @ VGS = 2.5 V 150 /C0070/C0069/C0065/C0084/C0085/C0082/C0069/C0083 /C0068Low On-Resistance: 2.0 Ω /C0068Low Threshold: 0.9 V (typ) /C0068Fast Switching Speed: 35 ns /C00682.5-V or Lower Operation /C0066/C0069/C0078/C0069/C0070/C0073/C0084/C0083 /C0068Ease in Driving Switches /C0068Low Offset (Error) Voltage /C0068Low-Voltage Operation /C0068High-Speed Circuits /C0068Low Battery Voltage Operation /C0065/C0080/C0080/C0076/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083 /C0068Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories /C0068Battery operated Systems /C0068Solid State Relay /C0068Load/Power Switching-Cell Phones, PDA SOT-363 SC-70 (6-Leads) S1 1 G 1 2 D 2 D 1 G 2 Order Number: TN0205AD SOT-323 SC-70 (3-Leads) S D G Order Number: TN0205A Marking Code: TN0205A: Bl TN0205AD: Dwl w = Week Code l = Lot Traceability /C0065/C0066/C0083/C0079/C0076/C0085/C0084/C0069/C0032/C0077/C0065/C0088/C0073/C0077/C0085/C0077/C0032/C0082/C0065/C0084/C0073/C0078/C0071/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Parameter Symbol TN0205A TN0205AD Unit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS /C00348 V /C0095a TA = 25/C0095C 250 Continuous Drain Current (TJ = 150/C0095C)a TA = 70/C0095C ID 200 mA Pulsed Drain Current IDM 500 TA = 25/C0095C 0.15 0.20 (Total) Maximum Power Dissipationa TA = 70/C0095C PD 0.10 0.13 (Total) W Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 /C0095C /C0084/C0072/C0069/C0082/C0077/C0065/C0076/C0032/C0082/C0069/C0083/C0073/C0083/C0084/C0065/C0078/C0067/C0069/C0032/C0082/C0065/C0084/C0073/C0078/C0071/C0083 Parameter Symbol TN0205A TN0205AD Unit Thermal Resistance, Junction-to-Ambienta R thJA 833 625 (Total) /C0095C/W Notes a. Surface Mounted on FR4 Board, t /C0118 10 sec.

Vishay Siliconix New Product www.vishay.com 11-2 Document Number: 70868 S-04279— Rev. B, 16-Jul-01 /C0083/C0080/C0069/C0067/C0073/C0070/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 10 /C0109A 20 24 Gate-Threshold Voltage VGS(th) VDS = VGS , ID = 50 /C0109A 0.4 0.9 1.5 V Gate-Body Leakage IGSS VDS = 0 V, VGS = /C00348 V /C00342 /C0034100 VDS = 20 V, VGS = 0 V 0.001 100 nA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V, TJ = 55/C0095C 5 /C0109A VDS = 5.0 V, VGS = 2.5 V 120 160 On-State Drain Currenta ID(on) VDS = 8.0 V, VGS = 4.5 V 400 800 mA a VGS = 2.5 V, ID = 150 mA 1.6 2.5 /C0087Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 250 mA 1.2 2.0 /C0087 Forward Transconductancea gfs VDS = 2.5 V, ID = 50 mA 200 mS Diode Forward Voltagea VSD IS = 50 mA, VGS = 0 V 0.7 1.2 V Dynamic Total Gate Charge Q g 350 450 Gate-Source Charge Q gs VDS = 5.0 V, VGS = 4.5 V, ID = 100 mA 25 pC Gate-Drain Charge Q gd 100 Input Capacitance C iss 20 Output Capacitance C oss VDS = 5.0 V, VGS = 0 V, f = 1 MHz 14 pF Reverse Transfer Capacitance C rss DS GS Switchingb, c Turn-On Delay Time td(on) 7 12 Rise Time tr VDD = 3.0 V, RL = 100 /C0087 25 35 Turn-Off Delay Time td(off) VDD = 3.0 V, RL = 100 /C0087 ID = 0.25 A, VGEN = 4.5 V, RG = 10 /C0087 19 30 ns Fall Time tf 9 15 Notes a. Pulse test; pulse width /C0118 300 /C0109s, duty cycle /C0118 2%. VNOJ b. For design only, not subject to production testing. c. Switching time is essentially independent of operating temperature.

Vishay SiliconixNew Product Document Number: 70868 S-04279— Rev. B, 16-Jul-01 www.vishay.com 11-3 /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 0.0 0.2 0.4 0.6 0.8 01234 0.00 0.25 0.50 0.75 1.00 1.25 01234 0 100 200 300 400 500 600 0.6 0.8 1.0 1.2 1.4 1.6 –50 –25 0 25 50 75 100 125 150 25/C0095C TJ = –55/C0095C C rss C oss VDS = 6 V ID = 100 mA VGS = 4.5 V ID = 100 m A VGS = 4.5 V VGS = 2.5 V 2 V 125/C0095C 2.5 V Output Characteristics Transfer Characteristics Gate Charge On-Resistance vs. Drain Current VDS – Drain-to-Source Voltage (V) V GS – Gate-to-Source Voltage (V) Q g – Total Gate Charge (pC) VDS – Drain-to-Source Voltage (V)ID – Drain Current (A) Capacitance On-Resistance vs. Junction Temperature TJ – Junction Temperature (/C0095C) 3 V VGS = 5 V 1.5 V 1 V 0 4 8 12 16 20 C iss 3.5 V 4.0 V ID – Drain Current (A) ID – Drain Current (A) rDS(on) – On-Resistance ( Ω ) C – Capacitance (pF) VGS – Gate-to-Source Voltage (V) rDS(on) – On-Resistance ( Ω ) (Normalized)

Vishay Siliconix New Product www.vishay.com 11-4 Document Number: 70868 S-04279— Rev. B, 16-Jul-01 /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 –0.4 –0.3 –0.2 –0.1 –0.0 0.1 0.2 –50 –25 0 25 50 75 100 125 150 ID = 50 /C0109A 1.2 02468 1 0 0.001 ID = 250 mA 0.00 0.3 0.9 TJ = 25/C0095C TJ = 125/C0095C Threshold Voltage TJ – Junction Temperature (/C0095C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD – Source-to-Drain Voltage (V) V GS – Gate-to-Source Voltage (V) 0.1 0.01 0.6 TJ = –55/C0095C rDS(on) – On-Resistance ( Ω ) IS – Source Current (A) VGS(th) – Variance (V)

Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1 Disclaimer Legal Disclaimer Notice Vishay All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all li ability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permit ted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.