TN0201K-T1-E3

TN0201KL VISHAY | Alldatasheet

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Technical content

FEATURES

/C0068TrenchFET/C0114 Power MOSFET

APPLICATIONS

/C0068Direct Logic-Level Interface: TTL/CMOS /C0068Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. /C0068Battery Operated Systems /C0068Solid-State Relays TN0201K/TN0201KL Vishay SiliconixNew Product Document Number: 72671 S-40245—Rev. A, 16-Feb-04 www.vishay.com N-Channel 20−V (D−S) MOSFET PRODUCT SUMMARY V(BR)DSS rDS( ) ID (A) V(BR)DSS Min (V) rDS(on) Max (/C0087) VGS(th) (V) TN0201K TN0201KL 1.0 @ VGS = 10 V 1 0 to 3 0 0.42 0.64 1.4 @ VGS = 4.5 V 1.0 to 3.0 0.35 0.53 TO-226AA (TO-92) Top View S D G G S D Top View TO-236 (SOT-23) TN0201KL Device Marking Front View “S” TN 0201KL xxyy “S” = Siliconix Logo xxyy = Date Code Marking Code: K3ywl K3 = Part Number Code for TN0201K y = Year Code w = Week Code l = Lot Traceability TN0201K ABSOLUTE MAXIMUM RATINGS (TA = 25/C0095C UNLESS OTHERWISE NOTED) Limit Parameter Symbol TN0201K TN0201KL Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS /C003420 V Continuous Drain Current (TJ = 150/C0095C) TA= 25/C0095C ID 0.42 0.64 Continuous Drain Current (TJ = 150/C0095C) TA= 70/C0095C ID 0.33 0.51 A Pulsed Drain Currenta IDM 0.8 1.5 Power Dissipation TA= 25/C0095C PD 0.35 0.8 WPower Dissipation TA= 70/C0095C PD 0.22 0.51 W Thermal Resistance, Junction-to-Ambient RthJA 357 156 /C0095C/W Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 /C0095C Notesa. Pulse width limited by maximum junction temperature.

Vishay Siliconix New Product www.vishay.com Document Number: 72671 S-40245—Rev. A, 16-Feb-04 SPECIFICATIONS (TA = 25/C0095C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 /C0109A 20 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 0.25 mA 1.0 2.0 3.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = /C003420 V /C0034100 nA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 /C0109AZero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V, TJ = 55/C0095C 10 /C0109A On State Drain Currenta ID( ) VDS = 10 V VGS = 10 V TN0201K 0.5 AOn-State Drain Currenta ID(on) VDS = 10 V, VGS = 10 V TN0201KL 0.8 A Drain-Source On-Resistancea rDS(on) VGS = 4.5 V, ID = 0.1 A 0.8 1.4 /C0087Drain-Source On-Resistancea rDS(on) VGS = 10 V, ID = 0.3 A 0.47 1.0 /C0087 Forward Transconductancea gfs VDS = 10 V, ID = 0.3 A 550 mS Diode Forward Voltage VSD IS = 0.3 A, VGS = 0 V 0.85 1.2 V Dynamicb Total Gate Charge Qg 1000 1500 Gate-Source Charge Qgs VDS = 16 V, VGS = 10 V ID /C0094 0.3 A 205 pC Gate-Drain Charge Qgd ID /C0094 0.3 A 200 Gate Resistance Rg 48 /C0087 Turn On Time td(on) 4.5 8 Turn-On Time tr VDD = 15 V, RL = 50 /C0087 ID /C0094 03 A V GEN = 10 V 8 15 ns Turn-Off Time td(off) ID /C0094 0.3 A, VGEN = 10 V RG = 6 /C0087 9 15 ns Turn-Off Time tf 6.3 12 Notes a. Pulse test: PW /C0118300 /C0109s duty cycle /C01182%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25/C0095C UNLESS NOTED) 0.0 0.2 0.4 0.6 0.8 1.0 012345 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VGS = 10 thru 5 V TJ = 125/C0095C −55/C0095C 3 V 25/C0095C Output Characteristics Transfer Characteristics VDS − Drain-to-Source Voltage (V) − Drain Current (A)I D VGS − Gate-to-Source Voltage (V) − Drain Current (A)I D 4 V 2 V

Vishay SiliconixNew Product Document Number: 72671 S-40245—Rev. A, 16-Feb-04 www.vishay.com TYPICAL CHARACTERISTICS (25/C0095C UNLESS NOTED) − On-Resistance (rDS(on) /C0087) 0 4 8 12 16 20 0.6 0.8 1.0 1.2 1.4 1.6 −50 −25 0 25 50 75 100 125 150 0.0 0.3 0.6 0.9 1.2 1.5 VDS − Drain-to-Source Voltage (V) Crss Coss Ciss VDS = 16 V ID = 0.3 A ID − Drain Current (A) VGS = 4.5 V ID = 0.1 A VGS = 10 V Gate Charge On-Resistance vs. Drain Current − Gate-to-Source Voltage (V) Qg − Total Gate Charge (nC) C − Capacitance (pF) V GS Capacitance On-Resistance vs. Junction Temperature TJ − Junction Temperature (/C0095C) (Normalized) − On-Resistance (rDS(on) /C0087) 0.0 0.4 0.8 1.2 1.6 2.0 2.4 0 4 8 12 16 20 TJ = 150/C0095C TJ = 25/C0095C ID = 0.3 A 0.1 0.001 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage − On-Resistance (rDS(on) /C0087) VSD − Source-to-Drain Voltage (V) V GS − Gate-to-Source Voltage (V) − Source Current (A)I S VGS = 4.5 V VGS = 10 V ID = 0.3 A 0.01

Vishay Siliconix New Product www.vishay.com Document Number: 72671 S-40245—Rev. A, 16-Feb-04 TYPICAL CHARACTERISTICS (25/C0095C UNLESS NOTED) 10−3 10−2 1 10 60010−110−4 100 −0.6 −0.4 −0.2 −0.0 0.2 0.4 −50 −25 0 25 50 75 100 125 150 ID = 250 /C0109A 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Threshold Voltage Variance (V)VGS(th) TJ − Temperature (/C0095C) Normalized Thermal Transient Impedance, Junction-to-Ambient (TO-236, TN0201K Only) Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance Safe Operating Area (TO-236, TN0201K Only) VDS − Drain-to-Source Voltage (V) 0.1 0.1 1 10 100 0.001 1 ms − Drain Current (A)I D

0.01 TA = 25/C0095C

Safe Operating Area (TO-226AA, TN0201KL Only) ID(on) Limited rDS(on) Limited BVDSS Limited VDS − Drain-to-Source Voltage (V) 0.1 0.1 1 10 100 0.001 1 1 ms − Drain Current (A)I D 10 sID(on) Limited IDM Limited rDS(on) Limited IDM Limited BVDSS Limited

Vishay SiliconixNew Product Document Number: 72671 S-40245—Rev. A, 16-Feb-04 www.vishay.com TYPICAL CHARACTERISTICS (25/C0095C UNLESS NOTED) 10−3 10−2 1 10 60010−110−4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Ambient (TO-226AA, TN0201KL Only) Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance