TN0200TS

TN0200T VISHAY | Alldatasheet

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Document Number: 70202 S-40277—Rev. F, 23-Feb-04 www.vishay.com N-Channel 20-V (D-S) MOSFETs PRODUCT SUMMARY ID (A) VDS (V) rDS(on) (/C0087) TN0200T TN0200TS 0.4 @ VGS = 4.5 V 0.73 1.2 20 0.5 @ VGS = 2.5 V 0.65 1.1 FEATURES BENEFITS APPLICATIONS /C0068Low On-Resistance: 0.29 /C0087 /C0068Low Threshold: 0.9 V (typ) /C00682.5-V or Lower Operation /C0068Fast Switching Speed: 22 ns /C0068Low Input and Output Leakage /C0068Low Offset Voltage /C0068Low-Voltage Operation /C0068High-Speed Circuits /C0068Low Error Voltage /C0068Low Battery Voltage Operation /C0068Direct Logic-Level Interfact: TTL/CMOS /C0068Dirvers: Relays, Solenoids, Lamps, Hammers /C0068Battery Operated Systems, DC/DC Converters /C0068Solid-State Relays /C0068Load/Power Switching−Cell Phones, Pagers G S D Top View TO-236 (SOT-23)

1 Marking Code:

TN0200T : NOwll TN0200TS: NSwll w = Week Code ll = Lot Traceability ABSOLUTE MAXIMUM RATINGS (TA = 25/C0095C UNLESS OTHERWISE NOTED) Parameter Symbol TN0200T TN0200TSc Unit Drain-Source Voltage VDS 20 20 V Gate-Source Voltage VGS /C00348 /C00348 V Continuous Drain Current (TJ = 150/C0095C)b TA= 25/C0095C ID 0.73 1.2 Continuous Drain Current (TJ = 150/C0095C)b TA= 70/C0095C ID 0.58 1.0 APulsed Drain Currenta IDM 4 4 A Continuous Source Current (Diode Conduction)b IS 0.6 1.0 Power Dissipationb TA= 25/C0095C PD 0.35 1.0 WPower Dissipationb TA= 70/C0095C PD 0.22 0.65 W Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 /C0095C THERMAL RESISTANCE RATINGS Parameter Symbol TN0200T TN0200TSc Unit Maximum Junction-to-Ambientb RthJA 357 125 /C0095C/W Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t /C0118 10 sec. c. Copper lead frame.

www.vishay.com Document Number: 70202 S-40277—Rev. F, 23-Feb-04 SPECIFICATIONS (TA = 25/C0095C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 /C0109A 20 36 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 50 /C0109A 0.5 0.9 1.5 V Gate-Body Leakage IGSS VDS = 0 V, VGS = /C00348 V /C0034100 nA Zero Gate Voltage Drain Current IDSS VDS = 16 V, VGS = 0 V 0.1 /C0109AZero Gate Voltage Drain Current IDSS TJ = 85/C0095C 2 /C0109A On State Drain Currenta ID( ) VDS /C0119 5 V, VGS = 4.5 V 2.5 AOn-State Drain Currenta ID(on) VDS /C0119 5 V, VGS = 2.5 V 1.5 A Drain Source On Resistancea rDS( ) VGS = 4.5 V, ID = 0.6 A 0.29 0.4 /C0087Drain-Source On-Resistancea rDS(on) VGS = 2.5 V, ID = 0.6 A 0.34 0.5 /C0087 Forward Transconductancea gfs VDS = 5 V, ID = 0.6 A 2.2 S Diode Forward Voltagea VSD IS = 0.6 A, VGS = 0 V 0.8 1.2 V Dynamic Total Gate Charge Qg 1900 2800 Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V, ID = 0.6 A 50 pC Gate-Drain Charge Qgd 750 Input Capacitance Ciss 90 Output Capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz 45 pF Reverse Transfer Capacitance Crss 12 Switching Turn-On Delay Time td(on) 8 13 Rise Time tr VDD = 10 V, RL = 16 /C0087 14 21 ns Turn-Off Delay Time td(off) VDD = 10 V, RL = 16 /C0087 ID /C0094 0.6 A, VGEN = 4.5 V, RG = 6 /C0087 21 30 ns Fall-Time tf 7 11 Notes a. Pulse test: PW /C0118300 /C0109s duty cycle /C01182%. VNLJ02

Document Number: 70202 S-40277—Rev. F, 23-Feb-04 www.vishay.com TYPICAL CHARACTERISTICS (TA = 25/C0095C UNLESS OTHERWISE NOTED) On-Resistance vs. Drain Current Output Characteristics Transfer Characteristics VDS − Drain-to-Source Voltage (V) V GS − Gate-to-Source Voltage (V) 01234 TC = −55/C0095C 125/C0095C 0, 0.5, 1 V 2.5 V VGS = 5, 4.5, 4 V 1.5 V 2 V 100 150 200 250 0 4 8 12 16 20 0.7 0.9 1.1 1.3 1.5 1.7 −50 0 50 100 150 0 300 600 900 1200 1500 1800 2100 0.0 0.2 0.4 0.6 0.8 1.0 01234567 Gate Charge Qg − Total Gate Charge (pC) VDS − Drain-to-Source Voltage (V) Crss Coss Ciss VDS = 10 V ID = 0.6 A ID − Drain Current (A) Capacitance On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 0.6 A TJ − Junction Temperature (/C0095C) VGS = 2.5 V VGS = 4.5 V

3.5 V 3 V

ID − Drain Current (A) ID − Drain Current (A) rDS(on) − Drain-Source On-Resistance ( Ω ) C − Capacitance (pF) VGS − Gate-to-Source Voltage (V) rDS(on) − On-Resistance ( Ω ) (Normalized)

www.vishay.com Document Number: 70202 S-40277—Rev. F, 23-Feb-04 TYPICAL CHARACTERISTICS (TA = 25/C0095C UNLESS OTHERWISE NOTED) −0.4 −0.3 −0.2 −0.1 −0.0 0.1 0.2 −50 0 50 100 150 0.0 0.2 0.4 0.6 0.8 012345 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) 0.1 0.01 10−4 10−3 10−2 10−1 1 Normalized Effective Transient Thermal Impedance VSD − Source-to-Drain Voltage (V) V GS − Gate-to-Source Voltage (V) TJ − Junction Temperature (/C0095C) Time (sec) 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 ID = 0.6 A ID = 50 /C0109A 0.1 0.01 TC = 25/C0095C Single Pulse TJ = 25/C0095C TJ = 150/C0095C IS − Source Current (A) rDS(on) − On-Resistance ( Ω ) VGS(th) − Variance (V) Power (W)