TN0200K_07 VISHAY | Alldatasheet

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Document Number: 72678 S-71198–Rev. B, 18-Jun-07 www.vishay.com N-Channel 20-V (D-S) MOSFETs

FEATURES

 TrenchFET ® Power MOSFET  ESD Protected: 4000 V

APPLICATIONS

 Direct Logic-Level Interface: TTL/CMOS  Drivers: Relays, Sol enoids, Lamps, Hammers  Battery Operated S ystems, DC/DC Converters  Solid-State Relays  Load/Power Switching-Cell Phones, Pagers PRODUCT SUMMARY VDS (V) r DS(on) (Ω)I D (A) 0.4 at VGS = 4.5 V 0.73 0.5 at VGS = 2.5 V 0.65 D S G 100 Ω G S D Top View TO-236 (SOT-23) Marking Code: K2ywl K2 = Part Number Code for TN0200K y = Year Code w = Week Code l = Lot Traceability Notes: a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t ≤ 10 sec. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ± 8 Continuous Drain Current (TJ = 150 °C)b TA = 25 °C ID 0.73 A TA = 70 °C 0.58 Pulsed Drain Currenta IDM 4 Continuous Source Current (Diode Conduction)b IS 0.3 Power Dissipationb TA = 25 °C PD 0.35 WTA = 70 °C 0.22 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit Maximum Junction-to-Ambientb RthJA 357 °C/W RoHS COMPLIANT

www.vishay.com Document Number: 72678 S-71198–Rev. B, 18-Jun-07 Vishay Siliconix TN0200K New Product Notes: a. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted SPECIFICATIONS TA = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Limits Unit Min Typ Max Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 µA 20 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 50 µA 0.45 0.6 1.0 Gate-Body Leakage IGSS V DS = 0 V, VGS = ± 4.5 V ± 5 µA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 0.1 TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 4.5 V 2.5 AVDS ≥ 5 V, VGS = 2.5 V 1.5 Drain-Source On-Resistancea rDS(on) VGS = 4.5 V, ID = 0.6 A 0.2 0.4 ΩVGS = 2.5 V, ID = 0.6 A 0.25 0.5 Forward Transconductancea gfs VDS = 5 V, ID = 0.6 A 2.2 S Diode Forward Voltagea VSD IS = 0.3 A, VGS = 0 V 0.8 1.2 V Dynamicb Total Gate Charge Qg VDS = 10 V, VGS = 4.5 V ID = 0.6 A 1400 2000 pCGate-Source Charge Qgs 190 Gate-Drain Charge Qgd 300 Gate Resistance Rg 105 Ω Tur n-On Delay Time td(on) VDD = 10 V, RL = 16 Ω ID ≅ 0.6 A, VGEN = 4.5 V Rg = 6 Ω 17 25 ns Rise Time tr 20 30 Turn-Off Delay Time td(off) 55 85 Fall TIme tf 30 45 Output Characteristics 0.0 0.8 1.6 2.4 3.2 4.0 VGS = 5 thru 2.5 V 1 V VDS – Drain-to-Source Voltage (V) – Drain Current (A)I D 2 V 1.5 V Transfer Characteristics TJ = - 55 °C 125 °C 25 °C VGS – Gate-to-Source Voltage (V) – Drain Current (A)I D

Document Number: 72678 S-71198–Rev. B, 18-Jun-07 www.vishay.com Vishay Siliconix TN0200K New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted On-Resistance vs. Drain Current Gate Charge Source-Drain Diode Forward Voltage – On-Resistance (Ω)rDS(on) 0.0 0.2 0.4 0.6 0.8 1.0 01234567 ID – Drain Current (A) VGS = 2.5 V VGS = 4.5 V VDS = 10 V ID = 0.6 A – Gate-to-Source Voltage (V) Qg – Total Gate Charge (nC) V GS TJ = 150 °C TJ = 25 °C 0.1 0.001 VSD – Source-to-Drain Voltage (V) – Source Current (A)I S 0.01 Capacitance On-Resistance vs. Junction Temperature On-Resistance vs. Gate-Source Voltage 100 125 150 175 200 0 4 8 12 16 20 VDS – Drain-to-Source Voltage (V) Crss Coss Ciss C – Capacitance (pF) 0.7 0.9 1.1 1.3 1.5 1.7 - 50 - 25 0 25 50 75 100 125 150 VGS = 4.5 V ID = 0.6 A TJ – Junction Temperature (°C) rDS(on) – On-Resiistance (Normalized) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 012345 ID = 0.6 A – On-Resistance (Ω)rDS(on) VGS – Gate-to-Source Voltage (V)

www.vishay.com Document Number: 72678 S-71198–Rev. B, 18-Jun-07 Vishay Siliconix TN0200K New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locatio ns. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72678. Threshold Voltage Single Pulse Power, Junction-to-Ambient - 0.4 - 0.3 - 0.2 - 0.1 - 0.0 0.1 0.2 - 50 - 25 0 25 50 75 100 125 150 ID = 50 µA Variance (V)VGS(th) TJ – Temperature ( C) Power (W) Time (sec) 1 600 100.10.01 100 Gate Current vs. Gate-Source Voltage Safe Operating Area 0.001 100 100000 0.1 1000 – Gate Current (µIGSS A) 26 8 1 0 TJ = 25 °C TJ = 150 °C 0.01 VGS – Gate-to-Source Voltage (V) 10000 VDS – Drain-to-Source Voltage (V) 0.1 0.1 1 10 100 0.001 TA = 25 °C Single Pulse – Drain Current (A)I D 0.01 IDM Limited ID(on) Limited *rDS(on) Limited BVDSS Limited 10 ms 100 ms dc 10 s 1 s 1 ms *VGS minimum VGS at which rDS(on) is specified Normalized Effective Transient Thermal Impedance, Junction-to-Ambient 10-3 10-2 1 10 60010-110-4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance

Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1 Disclaimer Legal Disclaimer Notice Vishay All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all li ability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permit ted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.