TN0193 STMICROELECTRONICS | Alldatasheet

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Technical content

July 2010 Doc ID 17034 Rev 3 1/6 TN0193 Technical note LRIS64K bumped die description Product information ■ Product name: LRIS64K Wafer and die features Wafer diameter: 8 inches Wafer thickness: 180 µm Die identification: M24RF64A1 Die finishing (front side): SiO Die finishing (back side): bare Si Die stepping (including X & Y scribes): X= 1500 µm Y= 2000 µm Scribing street: X = 80 µm Y = 80 µm Bond pad size inside die: X = 90 µm Y = 90 µm Bond pad opening inside die: X = 80 µm Y = 80µm Bond pad Metallization: AlSiCu

1 Die description

please refer to the LRIS64K datasheet available from your STMicroelectronics sales office. Table 1. Pad placements

  1. Refer to Figure 1 for an illustration.

1 DU (Do not use) (2)

  1. Pad passivated on sawn and bumped wafers.
  2. Pad bumped on sawn and bumped wafers.

Figure 1. Die description

2 Bump description

Figure 2. Bump section

3 Revision history

Table 2. Document revision history 28-Jan-2010 1 Initial release. 25-Feb-2010 2 Wafer thickness modified. Die technology and Diffusion plant removed. Pad 2 X coordinate updated in Table 1: Pad placements. Section 2: Bump description added.