TMR9001 MULTIDIMENSION | Alldatasheet

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Technical content

Datasheet V1.0a TMR9001 Ultra High Sensitivity，Ultra Low Noise TMR linear sensor General Description The TMR9001 linear sensor utilizes a unique push -pull Wheatstone bridge composed of four TMR sensor elements. The TMR9001 is assembled in a 6mm X 5mm X 1.5mm SOP8 package. Features and Benefits  Tunneling Magneto resistance (TMR) Technology  Ultra High Sensitivity (~300mV/V/Oe)  Ultra Low Noise Spectral Density (150pT/√Hz@1Hz)  Very Low Power Consumption  Excellent Thermal Stability  Low Hysteresis  Compatible with wide Range of Supply Voltages  No need for set/reset calibration

Applications

 Weak Magnetic Field Sensing  Current Sensors  Position and Displacement Sensing  Bio-medical Sensing  Magnetic Communication TMR9001 Transfer Curve The following figure shows the response of the TMR9001 to an applied magnetic field in the range of ± 1 Oe and ± 5 Oe when the TMR9001 is biased at 1 V. The following specifications are calculated over an analysis range of ± 0.5 Oe.

Datasheet V1.0a Sensor Noise The following figure illustrates the Power Spectral Density (PSD) of the TMR9001 self noise ( Ni). The 1/fnoise isapproximately 150 pT/√Hz @ 1Hz, and the white noise is approximately 2.5pT/√Hz @ 10kHz. Sensitivity temperature characteristic curve. The figure below shows the temperature characteristic curve of the TMR9001 sensor (test temperature range: -40, c ~125)

Datasheet V1.0a Pin Configuration SOP8 Top View Pin No. Pin Name Pin Function

5 Vcc Supply Voltage

6 V+ Analog Differential Output 1

7 V- Analog Differential Output 2

8 GND Ground

1,2,3,4 N/A Not Absolute Maximum Ratings Parameter Symbol Limit Unit Supply Voltage VCC 3 V Reverse Supply Voltage VRCC 3 V Max Exposed Field HE 4000 Oe(1) ESD Voltage VESD 4000 V Operating Temperature TA -40~125 °C Storage Temperature Tstg -50 ~150 °C Specification (VCC=1.0V, TA=25° C,Differential Output) Parameter Symbol Conditions Min Typ Max Unit Supply Voltage VCC Normal Operating 1 3 V Supply Current ICC Output Open 20(2) μA Resistance R 50 KOhm Sensitivity SEN Fit @±0.5 Oe 300 mV/V/Oe Saturation Field Hsat ±4 Oe Non-Linearity NONL Fit @±0.5 Oe 1 %FS Offset Voltage Voffset 15 mV/V Hysteresis Hys Fit @±0.5 Oe 0.1 Oe Resistance temperature coefficient TCR -40 ºc ~125 ºc -924 PPM/º c Sensitivity temperature coefficient. TCS -40 ºc ~125 ºc 52 PPM/º c Self Noise Ni @1Hz 150 pT/√Hz Notes:

Datasheet V1.0a (1) 1 Oe (Oersted) = 1 Gauss in air = 0.1 millitesla = 79.8 A/m. (2) Custom resistance may be available upon request.

Package Information

Top view and side view (unit:mm)

Datasheet V1.0a MultiDimension Technology Co., Ltd. Address:No.7 Guangdong Road, Zhangjiagang Free Trade Zone, Jiangsu, 215634, China Web: www.dowaytech.com/en Email: info@dowaytech.com The information provided herein by MultiDimension Technology Co., Ltd. (hereinafter MultiDimension) is believed to be accurate and reliable. Publication neither conveys nor implies any license under patent or other industrial or intellectual property rights. MultiDi mension reserves the right to make changes to product specifications for the purpose of improving product quality, reliability, and functionality. MultiDimension does not assume any liability arising out of the application and use of its products. MultiDimension’s customers using or selling this product for use in appliances, devices, or systems where malfunction can reasonably be expected to result in personal injury do so at their own risk and agree to fully indemnify MultiDimension for any damages resulting from such applications.