TMR2102 MULTIDIMENSION | Alldatasheet

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Technical content

Datasheet V1.0a TMR2102 Large Dynamic Range TMR linear sensor General Description The TMR2102 linear sensor utilizes a unique push-pull Wheatstone bridge composed of four unshielded TMR sensor elements. The unique bridge design provides a high sensitivity differential output that is linearly proportional to a magnetic field ap plied parallel to the surface of the sensor package, and it provides superior temperature compensation of the output. The TMR2102 is available in two pa ckaging form factors: SOP8 6mm X 5mm X 1.5mm (P/N TMR2102P), or DFN8 3mm X 3mm X 0.75mm(P/N TMR2102D). Features and Benefits  Tunneling Magneto resistance (TMR) Technology  High Sensitivity  Large Dynamic Range  Very Low Power Consumption  Excellent Thermal Stability  Very Low Hysteresis  Compatible with Wide Range of Supply Voltages

Applications

 Magnetic Field Sensing  Current Sensors  Industrial Flow Meters  Displacement Sensing  Rotary Position Sensors TMR2102 Transfer Curve The following figure shows the response of the TMR2101 to an applied magnetic field in the range of ± 30 Oe (left) and ± 200 Oe (right) when the TMR210 2 is biased at 1V. At low fields the TMR210 2 response is highly linear, and it is not harmed when the sensor is driven into saturation.

Datasheet V1.0a Pin Configuration (Arrow indicates direction of applied field that generates a positive output voltage.) Pin No. Pin Name Pin Function 1,2,7,8 N/A Not Connected

3 GND Ground

4 V- Analog Differential Output 2

5 V+ Analog Differential Output 1

6 Vcc Supply Voltage

Parameter Symbol Limit Unit Supply Voltage VCC 7 V Reverse Supply Voltage VRCC 7 V Max Exposed Field HE 1000 Oe(1) ESD Voltage VESD 4000 V Operating Temperature TA -40~125 °C Storage Temperature Tstg -50 ~150 °C Specification (VCC=1.0V, TA=25° C, Differential Output) Parameter Symbol Conditions Min Typ Max Unit Supply Voltage VCC Operating 1 7 V Supply Current(SOP8) ICC Output Open 11(2) μA Supply Current(DFN8) ICC Output Open 22(2) μA Resistance(SOP8) R 90(2,3) KOhm Resistance(DFN8) R 45(2,3) KOhm Sensitivity SEN Fit @± 30Oe 4.9 mV/V/Oe Saturation Field Hsat ±90 Oe Non-Linearity NoNL Fit @± 30Oe 1 %FS Offset Voltage Voffset -20 20 mV/V Hysteresis Hys Fit @±30Oe 0.1 0.2 Oe Temperature Coefficient of Resistance TCR H = 0 Oe -820 PPM/° C Temperature Coefficient of Sensitivity TCS -1160 PPM/° C Notes: (1) 1 Oe (Oersted) = 1 Gauss in air = 0.1 millitesla = 79.8 A/m. (2) Icc= Vcc/ R.The SOP8 and DFN8 packagesare designed with different resistance values, resulting in different Iccunder 1V supply. (3) Custom resistance may be available upon request.

Datasheet V1.0a

Package Information

Datasheet V1.0a TMR Sensor Position Top view and side view(unit: mm)

Datasheet V1.0a MultiDimension Technology Co., Ltd. Address:No.7 Guangdong Road, Zhangjiagang Free Trade Zone, Jiangsu, 215634, China Web: www.dowaytech.com/en Email: info@dowaytech.com The information provided herein by MultiDimension Technology Co., Ltd. (hereinafter MultiDimension) is believed to be accurate and reliable. Publication neither conveys nor implies any license under patent or other industrial or intellectual property rights. MultiDi mension reserves the right to make changes to product specifications for the purpose of improving product quality, reliability, and functionality. MultiDimension does not assume any liability arising out of the application and use of its products. MultiDimension’s customers using or selling this product for use in appliances, devices, or systems where malfunction can reasonably be expected to result in personal injury do so at their own r isk and agree to fully indemnify MultiDimension for any damages resulting from such applications.