TMP01FS-REEL

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Rev. E Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©1993–2009 Analog Devices, Inc. All rights reserved.

FEATURES

−55°C to +125°C (−67°F to +257°F) operation ±1.0°C accuracy over temperature (typ) Temperature-proportional voltage output User-programmable temperature trip points User-programmable hysteresis 20 mA open-collector trip point outputs TTL/CMOS compatible Single-supply operation (4.5 V to 13.2 V) PDIP , SOIC, and TO-99 packages

APPLICATIONS

Over/under temperature sensor and alarm Board-level temperature sensing Temperature controllers Electronic thermostats Thermal protection HVAC systems Industrial process control Remote sensors FUNCTIONAL BLOCK DIAGRAM VPTAT TEMPERATURE SENSOR AND VOLTAGE REFERENCE 2.5V SENSOR 5HYSTERESIS GENERATOR WINDOW COMPARATOR TMP01 VREF SET HIGH SET LOW GND UNDER OVER 00333-001 Figure 1. GENERAL DESCRIPTION The TMP01 is a temperature sensor that generates a voltage output proportional to absolute temperature and a control signal from one of two outputs when the device is either above or below a specific temperature range. Both the high/low temperature trip points and hysteresis (overshoot) band are determined by user-selected external resistors. For high volume production, these resistors are available on board. The TMP01 consists of a band gap voltage reference combined with a pair of matched comparators. The reference provides both a constant 2.5 V output and a voltage proportional to absolute temperature (VPTAT) which has a precise temperature coefficient of 5 mV/K and is 1.49 V (nominal) at 25°C. The comparators compare VPTAT with the externally set tempera- ture trip points and generate an open-collector output signal when one of their respective thresholds has been exceeded. Hysteresis is also programmed by the external resistor chain and is determined by the total current drawn out of the 2.5 V reference. This current is mirrored and used to generate a hysteresis offset voltage of the appropriate polarity after a comparator has been tripped. The comparators are connected in parallel, which guarantees that there is no hysteresis overlap and eliminates erratic transitions between adjacent trip zones. The TMP01 utilizes proprietary thin-film resistors in conjunc- tion with production laser trimming to maintain a temperature accuracy of ±1°C (typical) over the rated temperature range, with excellent linearity. The open-collector outputs are capable of sinking 20 mA, enabling the TMP01 to drive control relays directly. Operating from a 5 V supply, quiescent current is only 500 μA (max). The TMP01 is available in 8-pin mini PDIP , SOIC, and TO-99 packages.

Rev. E | Page 2 of 20 TABLE OF CONTENTS Safety Considerations in Heating and Cooling System Preserving Accuracy Over Wide Temperature Range

REVISION HISTORY

7/09—Rev. D to Rev. E 1/02—Rev. C: Rev. D 7/93—Revision 0: Initial Version

Rev. E | Page 3 of 20 SPECIFICATIONS TMP01ES, TMP01FP, TMP01FS PDIP and SOIC packages. V+ = 5 V , GND = O V , −40°C ≤ TA ≤ +85°C, unless otherwise noted. Table 1. Parameter Symbol Conditions Min Typ Max Unit INPUTS SET HIGH, SET LOW Offset Voltage VOS 0.25 mV Offset Voltage Drift TCVOS 3 μV/°C Input Bias Current, E Grade IB 25 50 nA Input Bias Current, F Grade IB 25 100 nA OUTPUT VPTAT Output Voltage VPTAT TA = 25°C, no load 1.49 V Scale Factor1 TCVPTAT 5 mV/K Temperature Accuracy, E Grade TA = 25°C, no load −1.5 ±0.5 1.5 °C Temperature Accuracy, F Grade TA = 25°C, no load −3 ±1.0 3 °C Temperature Accuracy, E Grade 10°C < TA < 40°C, no load ±0.75 °C Temperature Accuracy, F Grade 10°C < TA < 40°C, no load ±1.5 °C Temperature Accuracy, E Grade −40°C < TA < 85°C, no load −3.0 ±1 3.0 °C Temperature Accuracy, F Grade −40°C < TA < 85°C, no load −5.0 ±2 5.0 °C Temperature Accuracy, E Grade −55°C < TA < 125°C, no load ±1.5 °C Temperature Accuracy, F Grade ΔVPTAT −55°C < TA < 125°C, no load ±2.5 °C Repeatability Error2 0.25 Degree Long-Term Drift Error3,4 0.25 0.5 Degree Power Supply Rejection Ratio PSRR TA = 25°C, 4.5 V ≤ V+ ≤ 13.2 V ±0.02 ±0.1 %/V OUTPUT VREF Output Voltage, E Grade VREF TA = 25°C, no load 2.495 2.500 2.505 V Output Voltage, F Grade VREF TA = 25°C, no load 2.490 2.500 2.510 V Output Voltage, E Grade VREF −40°C < TA < 85°C, no load 2.490 2.500 2.510 V Output Voltage, F Grade VREF −40°C < TA < 85°C, no load 2.485 2.500 2.515 V Output Voltage, E Grade VREF −55°C < TA < 125°C, no load 2.5 ± 0.01 V Output Voltage, F Grade VREF −55°C < TA < 125°C, no load 2.5 ± 0.015 V Drift TCVREF −10 ppm/°C Line Regulation 4.5 V ≤ V+ ≤ 13.2 V ±0.01 ±0.05 %/V Load Regulation 10 μA ≤ IVREF ≤ 500 μA ±0.1 ±0.25 %/mA Output Current, Zero Hysteresis IVREF 7 μA Hysteresis Current Scale Factor1 SFHYS 5.0 μA/°C Turn-On Settling Time To rated accuracy 25 μs OPEN-COLLECTOR OUTPUTS OVER, UNDER Output Low Voltage VOL ISINK = 1.6 mA 0.25 0.4 V V OL ISINK = 20 mA 0.6 V Output Leakage Current IOH V+ = 12 V 1 100 μA Fall Time tHL See Figure 2 40 ns POWER SUPPLY Supply Range V+ 4.5 13.2 V Supply Current ISY Unloaded, +V = 5 V 400 500 μA I SY Unloaded, +V = 13.2 V 450 800 μA Power Dissipation PDISS +V = 5 V 2.0 2.5 mW 1 K = °C + 273.15. 2 Maximum deviation between 25°C readings after temperature cycling between −55°C and +125°C. 3 Guaranteed but not tested. 4 Observed in a group sample over an accelerated life test of 500 hours at 150°C.

Figure 2. Test Load TO-99 metal can package. V+ = 5 V , GND = 0 V , −40°C ≤ TA ≤ +85°C, unless otherwise noted. 2Maximum deviation between 25°C readings after temperature cycling between −55°C and +125°C. 4Observed in a group sample over an accelerated life test of 500 hours at 150°C.

Rev. E | Page 5 of 20 ABSOLUTE MAXIMUM RATINGS Table 3. Parameter Rating Maximum Supply Voltage −0.3 V to +15 V Maximum Input Voltage (SET HIGH, SET LOW) −0.3 V to V+ +0.3 V Maximum Output Current (VREF , VPTAT) 2 mA Maximum Output Current (Open-Collector Outputs) 50 mA Maximum Output Voltage (Open-Collector Outputs) 15 V Operating Temperature Range −55°C to +150°C Die Junction Temperature 150°C Storage Temperature Range −65°C to +150°C Lead Temperature (Soldering 60 sec) 300°C Digital inputs and outputs are protected; however, permanent damage may occur on unprotected units from high energy electrostatic fields. Keep units in conductive foam or packaging at all times until ready to use. Use proper antistatic handling procedures. Remove power before inserting or removing units from their sockets. Table 4. Package Type θJA θJC Unit 8-Lead PDIP (N-8) 1031 43 °C/W 8-Lead SOIC (R-8) 1582 43 °C/W 8-Pin TO-99 Can (H-08) 1501 18 °C/W 1 θJA is specified for device in socket (worst-case conditions). Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 θJA is specified for device mounted on PCB. ESD CAUTION

Figure 9. VREF Power Supply Rejection vs. Frequency

0.01 OFFSET VOLTAGE (mV)

Figure 10. Set High, Set Low Input Offset Voltage vs. Temperature Figure 11. Comparator Input Offset Distribution Figure 12. Zero Hysteresis Current Distribution

Rev. E | Page 10 of 20 APPLICATIONS INFORMATION SELF-HEATING EFFECTS In some applications, the user should consider the effects of self-heating due to the power dissipated by the open-collector outputs, which are capable of sinking 20 mA continuously. Under full load, the TMP01 open-collector output device is dissipating P DISS = 0.6 V × .020A = 12 mW which in a surface-mount SOIC package accounts for a temperature increase due to self-heating of ΔT = PDISS × θJA = .012 W × 158°C/W = 1.9°C This self-heating effect directly affects the accuracy of the TMP01 and will, for example, cause the device to activate the OVER output 2 degrees early. Bonding the package to a moderate heat sink limits the self- heating effect to approximately: ΔT = PDISS × θJC = .012 W × 43°C/W = 0.52°C which is a much more tolerable error in most systems. The VREF and VPTAT outputs are also capable of delivering sufficient current to contribute heating effects and should not be ignored. BUFFERING THE VOLTAGE REFERENCE The reference output VREF is used to generate the temper- ature setpoint programming voltages for the TMP01 and also to determine the hysteresis temperature band by the reference load current IVREF. The on-board output buffer amplifier is typically capable of 500 μA output drive into as much as 50 pF load (maximum). Exceeding this load affects the accuracy of the reference voltage, could cause thermal sensing errors due to dissipation, and may induce oscillations. Selection of a low drift buffer functioning as a voltage follower with high input impedance ensures optimal reference accuracy, and does not affect the programmed hysteresis current. Amplifiers which offer the low drift, low power consumption, and low cost appropriate to this application include the OP295, and members of the OP90, OP97, OP177 families, and others as shown in the following applications circuits. With excellent drift and noise characteristics, VREF offers a good voltage reference for data acquisition and transducer excitation applications as well. Output drift is typically better than −10 ppm/°C, with 315 nV/√Hz (typ) noise spectral density at 1 kHz. PRESERVING ACCURACY OVER WIDE TEMPERATURE RANGE OPERATION The TMP01 is unique in offering both a wide range temper- ature sensor and the associated detection circuitry needed to implement a complete thermostatic control function in one monolithic device. While the voltage reference, setpoint comparators, and output buffer amplifiers have been carefully compensated to maintain accuracy over the specified temper- ature range, the user has an additional task in maintaining the accuracy over wide operating temperature ranges in the application. Since the TMP01 is both sensor and control circuit, in many applications it is possible that the external components used to program and interface the device may be subjected to the same temperature extremes. Thus, it may be necessary to locate components in close thermal proximity to minimize large temperature differentials, and to account for thermal drift errors, such as resistor matching tempcos, amplifier error drift, and the like, where appropriate. Circuit design with the TMP01 requires a slightly different perspective regarding the thermal behavior of electronic components. THERMAL RESPONSE TIME The time required for a temperature sensor to settle to a speci- fied accuracy is a function of the thermal mass of the sensor, and the thermal conductivity between the sensor and the object being sensed. Thermal mass is often considered equivalent to capacitance. Thermal conductivity is commonly specified using the symbol Q, and can be thought of as the reciprocal of thermal resistance. It is commonly specified in units of degrees per watt of power transferred across the thermal joint. Thus, the time required for the TMP01 to settle to the desired accuracy is dependent on the package selected, the thermal contact established in that particular application, and the equivalent power of the heat source. In most applications, the settling time is probably best determined empirically.

REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN. Figure 35. 8-Pin Metal Header [TO-99]

Rev. E | Page 19 of 20 NOTES

Rev. E | Page 20 of 20 NOTES ©1993–2009 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the prop erty of their respective owners. D00333-0-7/09(E)