TMP01 AD | Alldatasheet
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REV. C Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. a Low Power, Programmable Temperature Controller TMP01* © Analog Devices, Inc., 1995 Tel: 617/329-4700 Fax: 617/326-8703
FEATURES
–558C to +125 8C (–678F to +257 8F) Operation 61.08C Accuracy Over Temperature (typ) Temperature-Proportional Voltage Output User Programmable Temperature Trip Points User Programmable Hysteresis 20 mA Open Collector Trip Point Outputs TTL/CMOS Compatible Single-Supply Operation (4.5 V to 13.2 V) Low Cost 8-Pin DIP and SO Packages
APPLICATIONS
Over/Under Temperature Sensor and Alarm Board Level Temperature Sensing Temperature Controllers Electronic Thermostats Thermal Protection HVAC Systems Industrial Process Control Remote Sensors GENERAL DESCRIPTION The TMP01 is a temperature sensor which generates a voltage output proportional to absolute temperature and a control signal from one of two outputs when the device is either above or below a specific temperature range. Both the high/low tempera- ture trip points and hysteresis (overshoot) band are determined by user-selected external resistors. For high volume production, these resistors are available on-board. The TMP01 consists of a bandgap voltage reference combined with a pair of matched comparators. The reference provides both a constant 2.5 V output and a voltage proportional to abso- lute temperature (VPTAT) which has a precise temperature co- efficient of 5 mV/K and is 1.49 V (nominal) at +25 °C. The comparators compare VPTAT with the externally set tempera- ture trip points and generate an open-collector output signal when one of their respective thresholds has been exceeded. *Protected by U.S. Patent No. 5,195,827. Hysteresis is also programmed by the external resistor chain and is determined by the total current drawn out of the 2.5 V refer- ence. This current is mirrored and used to generate a hysteresis offset voltage of the appropriate polarity after a comparator has been tripped. The comparators are connected in parallel, which guarantees that there is no hysteresis overlap and eliminates erratic transitions between adjacent trip zones. The TMP01 utilizes proprietary thin-film resistors in conjunc- tion with production laser trimming to maintain a temperature accuracy of ± 1°C (typ) over the rated temperature range, with excellent linearity. The open-collector outputs are capable of sinking 20 mA, enabling the TMP01 to drive control relays di- rectly. Operating from a +5 V supply, quiescent current is only 500 µA (max). The TMP01 is available in the low cost 8-pin epoxy mini-DIP and SO (small outline) packages, and in die form. VPTAT TEMPERATURE SENSOR & VOLTAGE REFERENCE 2.5V SENSOR 5HYSTERESIS GENERATOR WINDOW COMPARATOR TMP01 VREF SET HIGH SET LOW GND UNDER OVER
TMP01EP/FP , TMP01ES/FS–SPECIFICATIONS REV. C–2– Plastic DIP and Surface Mount Packages (V+ = +5 V, GND = O V, –40 8C ≤ TA ≤ +858C unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units INPUTS SET HIGH, SET LOW Offset Voltage V OS 0.25 mV Offset Voltage Drift TCV OS 3 µV/°C Input Bias Current, “E” I B 25 50 nA Input Bias Current, “F” I B 25 100 nA OUTPUT VPTAT1 Output Voltage VPTAT T A = +25°C, No Load 1.49 V Scale Factor TC VPTAT 5 mV/K Temperature Accuracy, “E” T A = +25°C, No Load –1.5 ± 0.5 1.5 °C Temperature Accuracy, “F” T A = +25°C, No Load –3 ± 1.0 3 °C Temperature Accuracy, “E” 10 °C < TA < 40°C, No Load ± 0.75 °C Temperature Accuracy, “F” 10 °C < TA < 40°C, No Load ± 1.5 °C Temperature Accuracy, “E” –40 °C < TA < 85°C, No Load –3.0 ± 1 3.0 °C Temperature Accuracy, “F” –40 °C < TA < 85°C, No Load –5.0 ± 2 5.0 °C Temperature Accuracy, “E” –55 °C < TA < 125°C, No Load ± 1.5 °C Temperature Accuracy, “F” –55 °C < TA < 125°C, No Load ± 2.5 °C Repeatability Error ΔVPTAT Note 4 0.25 Degree Long Term Drift Error Notes 2 and 6 0.25 0.5 Degree Power Supply Rejection Ratio PSRR T A = +25°C, 4.5 V ≤ V+ ≤ 13.2 V ± 0.02 ± 0.1 %/V OUTPUT VREF Output Voltage, “E” VREF T A = +25°C, No Load 2.495 2.500 2.505 V Output Voltage, “F” VREF T A = +25°C, No Load 2.490 2.500 2.510 V Output Voltage, “E” VREF –40 °C < TA < 85°C, No Load 2.490 2.500 2.510 V Output Voltage, “F” VREF –40 °C < TA < 85°C, No Load 2.485 2.500 2.515 V Output Voltage, “E” VREF –55 °C < TA < 125°C, No Load 2.5 ± 0.01 V Output Voltage, “F” VREF –55 °C < TA < 125°C, No Load 2.5 ± 0.015 V Drift TC VREF –10 ppm/ °C Line Regulation 4.5 V ≤ V+ ≤ 13.2 V ± 0.01 ± 0.05 %/V Load Regulation 10 µA ≤ IVREF ≤ 500 µA ± 0.1 ± 0.25 %/mA Output Current, Zero Hysteresis I VREF 7 µA Hysteresis Current Scale Factor SF HYS (Note 1) 5.0 µA/°C Turn-On Settling Time To Rated Accuracy 25 µs OPEN-COLLECTOR OUTPUTS OVER, UNDER Output Low Voltage V OL ISINK = 1.6 mA 0.25 0.4 V Output Low Voltage V OL ISINK = 20 mA 0.6 V Output Leakage Current I OH V+ = 12 V 1 100 µA Fall Time t HL See Test Load 40 ns POWER SUPPLY Supply Range V+ 4.5 13.2 V Supply Current I SY Unloaded, +V = 5 V 400 500 µA Supply Current I SY Unloaded, +V = 13.2 V 450 800 µA Power Dissipation P DISS +V = 5 V 2.0 2.5 mW NOTES 1K = °C + 273.15. 2Guaranteed but not tested. 3Does not consider errors caused by heating due to dissipation of output load currents. 4Maximum deviation between +25 °C readings after temperature cycling between –55 °C and +125 °C. 5Typical values indicate performance measured at T A = +25°C. 6Observed in a group sample over an accelerated life test of 500 hours at 150 °C. Specifications subject to change without notice. Test Load 20pF 1kW
REV. C –3– TMP01FJ–SPECIFICATIONS TO-99 Metal Can Package (V+ = +5 V, GND = O V, –40 8C ≤ TA ≤ +858C unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units INPUTS SET HIGH, SET LOW Offset Voltage V OS 0.25 mV Offset Voltage Drift TCV OS 3 µV/°C Input Bias Current, “F” I B 25 100 nA OUTPUT VPTAT1 Output Voltage VPTAT T A = +25°C, No Load 1.49 V Scale Factor TC VPTAT 5 mV/K Temperature Accuracy, “F” T A = +25°C, No Load –3 ± 1.0 3 °C Temperature Accuracy, “F” 10 °C < TA < 40°C, No Load ± 1.5 °C Temperature Accuracy, “F” –40 °C < TA < 85°C, No Load –5.0 ± 2 5.0 °C Temperature Accuracy, “F” –55 °C < TA < 125°C, No Load ± 2.5 °C Repeatability Error ΔVPTAT Note 4 0.25 Degree Long Term Drift Error Notes 2 and 6 0.25 0.5 Degree Power Supply Rejection Ratio PSRR T A = +25°C, 4.5 V ≤ V+ ≤ 13.2 V ± 0.02 ± 0.1 %/V OUTPUT VREF Output Voltage, “F” VREF T A = +25°C, No Load 2.490 2.500 2.510 V Output Voltage, “F” VREF –40 °C < TA < 85°C, No Load 2.480 2.500 2.520 V Output Voltage, “F” VREF –55 °C < TA < 125°C, No Load 2.5 ± 0.015 V Drift TC VREF –10 ppm/ °C Line Regulation 4.5 V ≤ V+ ≤ 13.2 V ± 0.01 ± 0.05 %/V Load Regulation 10 µA ≤ IVREF ≤ 500 µA ± 0.1 ± 0.25 %/mA Output Current, Zero Hysteresis I VREF 7 µA Hysteresis Current Scale Factor SF HYS (Note 1) 5.0 µA/°C Turn-On Settling Time To Rated Accuracy 25 µs OPEN-COLLECTOR OUTPUTS OVER, UNDER Output Low Voltage V OL ISINK = 1.6 mA 0.25 0.4 V Output Low Voltage V OL ISINK = 20 mA 0.6 V Output Leakage Current I OH V+ = 12 V 1 100 µA Fall Time t HL See Test Load, Note 2 40 ns POWER SUPPLY Supply Range V+ 4.5 13.2 V Supply Current I SY Unloaded, +V = 5 V 400 500 µA Supply Current I SY Unloaded, +V = 13.2 V 450 800 µA Power Dissipation P DISS +V = 5 V 2.0 2.5 mW NOTES 1K = °C + 273.15. 2Guaranteed but not tested. 3Does not consider errors caused by heating due to dissipation of output load currents. 4Maximum deviation between +25 °C readings after temperature cycling between –55 °C and +125 °C. 5Typical values indicate performance measured at T A = +25°C. 6Observed in a group sample over an accelerated life test of 500 hours at 150 °C. Specifications subject to change without notice.
REV. C–4– WAFER TEST LIMITS Parameter Symbol Conditions Min Typ Max Units INPUTS SET HIGH, SET LOW Input Bias Current I B 100 nA OUTPUT VPTAT Temperature Accuracy T A = +25°C, No Load 1.5 °C OUTPUT VREF Nominal Value VREF T A = +25°C, No Load 2.490 2.510 V Line Regulation 4.5 V ≤ V+ ≤ 13.2 V ± 0.05 %/V Load Regulation 10 µA ≤ IVREF ≤ 500 µA ± 0.25 %/mA OPEN-COLLECTOR OUTPUTS OVER, UNDER Output Low Voltage V OL ISINK = 1.6 mA 0.4 mV Output Low Voltage V OL ISINK = 20 mA 1.0 V Output Leakage Current I OH 100 µA POWER SUPPLY Supply Range V+ 4.5 13.2 V Supply Current I SY Unloaded 600 µA NOTES Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing. DICE CHARACTERISTICS Die Size 0.078 × 0.071 inch, 5,538 sq. mils Transistor Count: 105 For additional DICE ordering information, refer to databook. 8 7 6 5 1 2 3 4 1. VREF 2. SETHIGH 3. SETLOW 4. GND (TWO PLACES) (CONNECTED TO SUBSTRATE) 5. VPTAT 6. UNDER 7. OVER 8. V+ (VDD = +5.0 V, GND = 0 V, TA = +258C, unless otherwise noted)
1θJA is specified for device in socket (worst case conditions). 2θJA is specified for device mounted on PCB.
- Stresses above those listed under “Absolute Maximum Rat-
- Digital inputs and outputs are protected, however, permanent
- Remove power before inserting or removing units from their
2 XIND TO-99 Can H-08A
2Consult factory for availability of MIL/883 version in TO-99 can. drift voltage reference is available for setpoint programming. the Applications Information following. Figure 1. Detailed Block Diagram
drops to less than 1 nA (typ) when the comparator is tripped. sufficient time for the device to reach the final temperature. band, and must be included in error calculations. to minimize common thermal error sources. for power supply bypassing is always recommended at the chip. Figure 6. Minimum Supply Voltage vs. TemperatureFigure 5. Supply Current vs. Supply Voltage
REV. C–10– Switching Loads With The Open-Collector Outputs In many temperature sensing and control applications some type of switching is required. Whether it be to turn on a heater when the temperature goes below a minimum value or to turn off a motor that is overheating, the open-collector outputs Over and Under can be used. For the majority of applications, the switches used need to handle large currents on the order of 1 amp and above. Because the TMP01 is accurately measuring tempera- ture, the open-collector outputs should handle less than 20 mA of current to minimize self-heating. Clearly, the Over-temp and Under-temp outputs should not drive the equipment directly. Instead, an external switching device is required to handle the large currents. Some examples of these are relays, power MOSFETs, thyristors, IGBTs, and Darlingtons. Figure 15 shows a variety of circuits where the TMP01 controls a switch. The main consideration in these circuits, such as the relay in Figure 15a, is the current required to activate the switch. MOTOR SHUTDOWN 2604-12-311 COTO IN4001 OR EQUIV. +12V TEMPERATURE SENSOR & VOLTAGE REFERENCE HYSTERESIS GENERATOR WINDOW COMPARATOR TMP01 VPTATVREF Figure 15a. Reed Relay Drive It is important to check the particular relay you choose to ensure that the current needed to activate the coil does not exceed the TMP01’s recommended output current of 20 mA. This is easily determined by dividing the relay coil voltage by the specified coil resistance. Keep in mind that the inductance of the relay will create large voltage spikes that can damage the TMP01 out- put unless protected by a commutation diode across the coil, as shown. The relay shown has a contact rating of 10 watts maxi- mum. If a relay capable of handling more power is desired, the larger contacts will probably require a commensurately larger coil, with lower coil resistance and thus higher trigger current. As the contact power handling capability increases, so does the current needed for the coil. In some cases an external driving transistor should be used to remove the current load on the TMP01 as explained in the next section. Power FETs are popular for handling a variety of high current DC loads. Figure 15b shows the TMP01 driving a p-channel MOSFET transistor for a simple heater circuit. When the out- put transistor turns on, the gate of the MOSFET is pulled down to approximately 0.6 V, turning it on. For most MOSFETs a gate-to-source voltage or Vgs on the order of –2 V to –5 V is suf- ficient to turn the device on. Figure 15c shows a similar circuit for turning on an n-channel MOSFET, except that now the gate to source voltage is positive. Because of this reason an external transistor must be used as an inverter so that the MOSFET will turn on when the “Under Temp” output pulls down. NC = NO CONNECT NC NC IRFR9024 OR EQUIV. HEATING ELEMENT 2.4kW (12V) 1.2kW (6V) TEMPERATURE SENSOR & VOLTAGE REFERENCE HYSTERESIS GENERATOR WINDOW COMPARATOR TMP01 VPTATVREF Figure 15b. Driving a P-Channel MOSFET IRF130 NC = NO CONNECT NC NC 2N1711 HEATING ELEMENT 4.7kW 4.7kW TEMPERATURE SENSOR & VOLTAGE REFERENCE
4 HYSTERESIS
Figure 15c. Driving a N-Channel MOSFET Isolated Gate Bipolar Transistors (IGBT) combine many of the benefits of power MOSFETs with bipolar transistors, and are used for a variety of high power applications. Because IGBTs have a gate similar to MOSFETs, turning on and off the devices is relatively simple as shown in Figure 15d. The turn on voltage for the IGBT shown (IRGBC40S) is between 3.0 and 5.5 volts. This part has a continuous collector current rating of 50 A and a maximum collector to emitter voltage of 600 V, enabling it to work in very demanding applications. IRGBC40S NC = NO CONNECT NC NC 2N1711 4.7kW 4.7kW TEMPERATURE SENSOR & VOLTAGE REFERENCE Figure 15d. Driving an IGBT
REV. C –11– The last class of high power devices discussed here are Thyris- tors, which includes SCRs and Triacs. Triacs are a useful alter- native to relays for switching ac line voltages. The 2N6073A shown in Figure 15e is rated to handle 4A (rms). The optoisolated MOC3011. Triac shown features excellent electri- cal isolation from the noisy ac line and complete control over the high power Triac with only a few additional components. NC = NO CONNECT NC NC V+ = 5V 300W 150W TEMPERATURE SENSOR & VOLTAGE REFERENCE
6 MOC3011
Figure 15e. Controlling the 2N6073A Triac High Current Switching As mentioned above, internal dissipation due to large loads on the TMP01 outputs will cause some temperature error due to self-heating. External transistors remove the load from the TMP01, so that virtually no power is dissipated in the internal transistors and no self-heating occurs. Figure 16 shows a few ex- amples using external transistors. The simplest case, using a single transistor on the output to invert the output signal is shown in Figure 16a. When the open-collector of the TMP01 turns “ON” and pulls the output down, the external transistor Q1’s base will be pulled low, turning off the transistor. Another transistor can be added to reinvert the signal as shown in Figure 16b. Now, when the output of the TMP01 is pulled down, the first transistor, Q1, turns off and its collector goes high, which turns Q2 on, pulling its collector low. Thus, the output taken from the collector of Q2 is identical to the output of the TMP01. By picking a transistor that can accommodate large amounts of current, many high power devices can be switched. 2N1711 4.7kW TEMPERATURE SENSOR & VOLTAGE REFERENCE Figure 16a. An External Resistor Minimizes Self-Heating Q1 Q2 2N1711 4.7kW TEMPERATURE SENSOR & VOLTAGE REFERENCE IC4.7kW 2N1711 Figure 16b. Second Transistor Maintains Polarity of TMP01 Output An example of a higher power transistor is a standard Darling- ton configuration as shown in Figure 16c. The part chosen, TIP-110, can handle 2A continuous which is more than enough to control many high power relays. In fact the Darlington itself can be used as the switch, similar to MOSFETs and IGBTs. MOTOR SWITCH RELAY +12V 2N1711 4.7kW TEMPERATURE SENSOR & VOLTAGE REFERENCE 4.7kW TIP-110 Figure 16c. Darlington Transistor Can Handle Large Currents
up to 0.1 µF. Other interfacing ideas are shown below. Figure 17. Buffer VPTAT to Handle Difficult Loads ratio of 95 dB at dc and very low input and drift errors. Figure 18. Send the Signal Differentially for Noise Immunity
max, and the OP90s is 20 µA max, totaling less than 4 mA. Figure 19. 4-20 mA Current Loop absolute value of the resistors is not important, only the ratio. output current of 12.3 mA at 25 °C. Figure 20. Temperature-to-Frequency Converter
Figure 21. Isolation Amplifier Figure 22. Out-of-Range Warning
REV. C–16– OUTLINE DIMENSIONS Dimensions shown in inches and (mm). 8-Pin Epoxy DIP 0.160 (4.06) 0.115 (2.93) 0.130 (3.30) MIN 0.210 (5.33) MAX 0.015 (0.381) TYP 0.430 (10.92) 0.348 (8.84) 0.280 (7.11) 0.240 (6.10) 0.070 (1.77) 0.045 (1.15) 0.022 (0.558) 0.014 (0.356) 0.325 (8.25) 0.300 (7.62) 0°- 15° 0.100 (2.54) BSC 0.015 (0.381) 0.008 (0.204) SEATING PLANE 0.195 (4.95) 0.115 (2.93) 8-Pin SOIC SEATING PLANE 0.0500 (1.27) BSC 0.2440 (6.20) 0.2284 (5.80) 0.1574 (4.00) 0.1497 (3.80) 0.1968 (5.00) 0.1890 (4.80) 0.0500 (1.27) 0.0160 (0.41) 0°-8° 0.0099 (0.25) 0.0098 (0.25) 0.0075 (0.19) 0.102 (2.59) 0.094 (2.39) 0.0192 (0.49) 0.0138 (0.35) 0.0098 (0.25) 0.0040 (0.10) 8-Pin TO-99 45° BSC 0.115 (2.92) BSC 0.034 (0.86) 0.027 (0.69) 0.045 (1.14) 0.027 (0.69) 0.160 (4.06) 0.110 (2.79) 0.115 (2.92) BSC 0.230 (5.84) BSC REFERENCE PLANE BASE & SEATING PLANE 0.335 (8.51) 0.305 (7.75) 0.370 (9.40) 0.335 (8.51) 0.750 (19.05) 0.500 (12.70) 0.045 (1.14) 0.010 (0.25) 0.050 (1.27) MAX 0.016 (0.41) 0.021 (0.53) 0.016 (0.41) 0.185 (4.70) 0.165 (4.19) 0.250 (6.35) MIN C1802b–5–7/95PRINTED IN U.S.A.