TMMDB3TG STMICROELECTRONICS | Alldatasheet
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Technical content
TMMDB3TG® January 2001 - Ed: 2 DIAC MINIMELF n VBO : 32V n Low breakover current: 15µA max n Breakover voltage range: 30 to 34V
FEATURES
Functioning as a trigger diode with a fixed voltage reference, the TMMDB3TG can be used in con- junction with triacs for simplified gate control cir- cuits or as a starting element in fluorescent lamp ballasts.
DESCRIPTION
Symbol Parameter Value Unit I TRM Repetitive peak on-state current t p=2 0µs F= 120 Hz Tstg Tj Storage temperature range Operating junction temperature range -4 0t o+1 2 5 °C ABSOLUTE MAXIMUM RATINGS (limiting values)
Symbol Parameter Test Conditions Value Unit VBO Breakover voltage * C = 22nF MIN. 30 V TYP. 32 MAX. 34 IVBO1 -VBO2 I Breakover voltage symmetry C = 22nF MAX. ± 2 V Δ V Dynamic breakover voltage * VBO and VF at 10mA MIN. 9 V VO Output voltage * see diagram 2 (R=20Ω ) MIN. 5 V IBO Breakover current * C = 22nF ** MAX. 15 µA tr Rise time * see diagram 3 MAX. 2 µs IR Leakage current * V R = 0.5 VBO max MAX. 10 µA * Applicable to both forward and reverse directions. ** Connected in parallel to the device. ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) TMM DB 3 TG Special V rangeBO Breakover voltage 3: V typ = 32VBO Diac Series MINIMELF
ORDERING INFORMATION
Part Number Marking Weight Base Quantity Packing Mode TMMDB3TG (None) 0.04 g 2500 Tape & Reel OTHER INFORMATION
+I F -IF 0,5 VBO VBO V VF Diagram 1:Voltage - current characteristic curve. D.U.T Vo C=0.1µF 220 V 50 Hz 500 kΩ10 kΩ R=20 Ω IP Rs=0 T410 Diagram 2:Test circuit. 90 % lp 10 % tr Diagram 3:Rise time measurement. 25 50 75 100 125 1.08 1.06 1.04 1.02 1.00 VBO [Tj] VBO [Tj = 25°C] Tj (°C) Fig. 1:Relative variation of VBO versus junction temperature (typical values) 1 10 1000.1 1.0 10.0 20.0 tp(µs) ITRM(A) F=120Hz Tj initial=25°C Fig. 2:Repetitive peak pulse current versus pulse duration (maximum values).
PACKAGE MECHANICAL DATA (in millimeters) MINIMELF REF. DIMENSIONS Millimeters Inches D 1.50 0.059 BO/ A CC DO/
0.05 E-FO/
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 2.5 FOOTPRINT 10 20 50 100 200 5000 C(nF) tp(µs) Tj=25°C 10Ω 22Ω 68Ω 47Ω 33Ω Fig. 3:Time duration while current pulse is higher 50mA versus C and Rs (typical values).