TMMBT5551 LUGUANG | Alldatasheet

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Technical content

Features

 Epitaxial planar die construction  Complementary PNP type available(TMMBT5401)  Halogen free  Qualified to AEC-Q101 standards for high reliability Mechanical Data  Case: SOT-23  Molding compound: UL flammability classification rating 94V-0  Terminals: Tin-plated; solderability per MIL-STD-202, Method 208 SOT-23 Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Breakdown Voltage VCEO 160 V Emitter-Base Breakdown Voltage VEBO 6 V Collector Current (Continuous) IC 0.6 A Collector Current (Peak) ICM 0.8 A Thermal Characteristics Parameter Symbol Value Unit Power Dissipation PD 0.35 W Thermal Resistance Junction-to-Air *1 RθJA 396 °C/W Thermal Resistance Junction-to-Case *1 RθJC 213 °C/W Thermal Resistance Junction-to-Lead *1 RθJL 186 °C/W Junction Temperature Range TJ -55 ~ +150 °C Storage Temperature Range TSTG -55 ~ +150 °C Note 1: The data tested by surface mounted on a 15mm * 15mm * 1mm FR4-epoxy P.C.B TMMBT5551 NPN Silicon Epitaxial Planar Transistor http://www.lgesemi.com Revision:20241125-P1 mail:lge@lgesemi.com

Electrical Characteristics (@ TA = 25°C unless otherwise specified) Parameter Symbol Test C ondition Min. Typ. Max. Unit Collector-Base Breakdown Voltage V (BR)CBO IC = 100μA, IE = 0 180 - - V Collector-Emitter Breakdown Voltage V (BR)CEO IC = 0.1mA, IB = 0 160 - - V Emitter-Base Breakdown Voltage V (BR)EBO IE = 10μA ,IC = 0 6 - - V Collector Cut-off Current ICBO VCB = 120V, IE = 0 - - 50 nA Emitter Cut-off Current IEBO VEB = 4V, IC = 0 - - 50 nA VCE = 5V, IC = 1mA 80 - - - DC Current Gain hFE VCE = 5V, IC = 10mA 100 - 300 - VCE = 5V, IC = 50mA 30 - - - IC = 10mA, IB = 1mA - - 0.15 V Collector-emitter Saturation Voltage V CE(sat) IC = 50mA, IB = 5mA - - 0.2 V IC = 10mA, IB = 1mA - - 1 V Base-emitter Saturation Voltage VBE(sat) IC = 50mA, IB = 5mA - - 1 V Collector-base Output Capacitance C cbo VCB = 10V, f = 1MHz - - 6 pF IC = 10mA, VCE = 10V f = 100MHz Current-Gain— Bandwidth Product f T 100 300 - MHz TMMBT5551 NPN Silicon Epitaxial Planar Transistor http://www.lgesemi.com Revision:20241125-P2 mail:lge@lgesemi.com

Ratings and Characteristics Curves (@ TA = 25°C unless otherwise specified) Fig 1 hFE vs. IC Fig 3 VBE(sat) vs. IC Fig 2 VCE(sat) vs. IC Fig 4 VBE(ON) vs. IC TA = 25℃ TA = 150℃ TA = -55℃ 100 1000 0.1 1 10 100 hFE IC（mA） VCE = 5V TA = 25℃ TA = 150℃ TA = -55℃ 100 1000 0.1 1 10 100 VCESAT（mV） IC（mA） IC/IB = 10 TA = 25℃ TA = 150℃ TA = -55℃ 200 400 600 800 1000 1200 0.1 1 10 100 VBESAT（mV） IC（mA） IC/IB = 10 TA = 25℃ TA = 150℃ TA = -55℃ 200 400 600 800 1000 1200 0.1 1 10 100 VBEon（mV） IC（mA） VCE = 5V TMMBT5551 NPN Silicon Epitaxial Planar Transistor http://www.lgesemi.com Revision:20241125-P3 mail:lge@lgesemi.com

Package Outline Dimensions (Unit: mm) SOT-23 Dimension Min. Max. A 2.70 3.10 B 1.10 1.50 C 0.90 1.10 D 0.30 0.50 E 0.35 0.48 G 1.80 2.00 H 0.02 0.10 J 0.05 0.15 K 2.20 2.60 Package Outline Dimensions (Unit: mm) SOT-23 A B C D E J H K G 0.90 0.80 2.00 0.95 0.95

Ordering Information

Part Number Package Shipping Quantity Marking Code TMMBT5551 SOT-23 3000 pcs / Tape & Reel G1 TMMBT5551 NPN Silicon Epitaxial Planar Transistor http://www.lgesemi.com Revision:20241125-P4 mail:lge@lgesemi.com