TMMBAT48 STM | Alldatasheet
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Technical content
SMALL SIGNAL SCHOTTKY DIODES
DESCRIPTION
General purpose, metal to silicon diodes featuring very low turn-on voltage and fast switching. These devices have integrated protection against excessive voltage such as electrostatic discharges. August 1999 Ed: 1A MINIMELF (Glass) Symbol Parameter TMMBAT47 TMMBAT48 Unit VRRM Repetitive Peak Reverse Voltage 20 40 V IF Forward Continuous Current Tl = 25 °C 350 mA IFRM Repetitive Peak Fordward Current t p ≤ 1s δ ≤ 0.5 IFSM Surge non Repetitive Forward Current t p = 10ms 7.5 A tp = 1s 1.5 Ptot Power Dissipation Tl = 25 °C 330 mW Tstg Tj Storage and Junction Temperature Range - 65 to 150 - 65 to 125 TL Maximum Temperature for Soldering during 15s 260 °C ABSOLUTE RATINGS (limiting values) Symbol Test Conditions Value Unit R th(j-l) Junction-leads 300 °C/W THERMAL RESISTANCE
- Pulse test: tp ≤ 300µs δ < 2% . Symbol Test Conditions Min. Typ. Max. Unit VBR Tj = 25°CI R = 10µA TMMBAT47 20 V Tj = 25°CI R = 25µA TMMBAT48 40 VF* Tj = 25°C IF = 0.1mA All Types 0.25 V Tj = 25°C IF = 1mA 0.3 Tj = 25°C IF = 10mA 0.4 Tj = 25°C IF = 30mA TMMBAT47 0.5 Tj = 25°C IF = 150mA 0.8 Tj = 25°C IF = 300mA 1 Tj = 25°C IF = 50mA TMMBAT48 0.5 Tj = 25°C IF = 200mA 0.75 Tj = 25°C IF = 500mA 0.9 IR* Tj = 25°C VR = 1.5V All Types 1 µA Tj = 60°C 10 Tj = 25°C VR = 10V TMMBAT47 4 Tj = 60°C 20 Tj = 25°C VR = 20V 10 Tj = 60°C 30 Tj = 25°C VR = 10V TMMBAT48 2 Tj = 60°C 15 Tj = 25°C VR = 20V 5 Tj = 60°C 25 Tj = 25°C VR = 40V 25 Tj = 60°C 50 STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit C Tj = 25°CV R = 0V f = 1MHz 20 pF Tj = 25°CV R = 1V 12 trr Tj = 25°C IF = 10mA VR = 1V irr = 1mA RL = 100Ω 10 ns DYNAMIC CHARACTERISTICS TMMBAT 47/TMMBAT 48
Figure 5. Capacitance C versus reverse applied voltage VR (typical values).
Marking: ring at cathode end. Weight: 0.05g PACKAGE MECHANICAL DATA FOOT PRINT DIMENSIONS (Millimeter) MINIMELF Glass B A CC 2.5 REF . DIMENSIONS Millimeters Inches D 1.50 0.059 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com TMMBAT 47/TMMBAT 48