TMJD44H11 LUGUANG | Alldatasheet

Document overview

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Technical content

Features

 Low collector-emitter saturation voltage  Fast switching speeds  Complement to TMJD45H11  RoHS compliant with Halogen-free  Qualified to AEC-Q101 Standards Mechanical Data  Case: TO-252  Molding compound: UL flammability classification rating 94V-0  Terminals: Tin-plated; solderability per MIL-STD-202, Method 208 TO-252

Ordering Information

Part Number Package Shipping Quantity Marking Code TMJD44H11 TO-252 80 pcs / Tube or 2500 pcs / Tape & Reel MJD44H11 Maximum Ratings (@ TA = 25℃ unless otherwise specified) Parameter Symbol Value Unit Collector-Emitter Breakdown Voltage VCEO 80 V Emitter-Base Breakdown Voltage VEBO 5 V Collector Current (Continuous) IC 8 A Collector Current (Pulse) ICM 16 A Thermal Characteristics Parameter Symbol Value Unit Power Dissipation (TC = 25° C) PD 20 W Thermal Resistance (Junction-to-Air) RθJA 71.4 C/W Thermal Resistance (Junction-to-Case) RθJC 6.25 C/W Junction Temperature TJ -55 ~ +150 °C Storage Temperature Range TSTG -55 ~ +150 °C http://www.lgesemi.com Revision:20241022-P1 mail:lge@lgesemi.com

Electrical Characteristics (@ TA = 25℃ unless otherwise specified) Parameter Symbol Test Condition Min. Typ. Max. Unit Collector-Emitter Sustaining Voltage VCEO(SUS) IC = 30mA, IB = 0 80 - - V Collector Cut-off Current ICES VCE = Rated VCEO, VBE = 0 - - 1 μA Emitter Cut-off Current IEBO VEB = 5V, IC = 0 - - 1 μA DC Current Gain hFE VCE = 1V, IC = 2A 60 - - - VCE = 1V, IC = 4A 40 - - - Collector-emitter Saturation Voltage VCE(sat) IC = 8A, IB = 0.4A - - 1 V Base-emitter Saturation Voltage VBE(sat) IC = 8A, IB = 0.8A - - 1.5 V Output Capacity Cob VCB = 10V, f = 1MHz - 65 - pF Current-Gain—Bandwidth Product fT IC = 0.5A, VCE = 10V f = 20MHz - 50 MHz TMJD44H11 NPN Silicon Epitaxial Planar Transistor http://www.lgesemi.com Revision:20241022-P2 mail:lge@lgesemi.com

Ratings and Characteristic Curves (@ TA = 25°C unless otherwise specified) Fig 1 hFE vs. IC Fig 3 VBE(sat) vs. IC Fig 5 IC vs. VCE Fig 2 VCE(sat) vs. IC Fig 4 VBE(ON) vs. IC Fig 6 PD vs. TA 100 1000 1 10 100 1000 10000 hFE IC（mA） VCE = 1V TA = 25℃ TA = -55℃ TA =150℃ 100 200 300 400 500 600 1 10 100 1000 10000 VCESAT（mV） IC（mA） IC/IB = 10 TA = 25℃ TA = -55℃ TA = 150℃ 200 400 600 800 1000 1200 1 10 100 1000 10000 VBESAT（mV） IC（mA） IC/IB = 10 TA = 25℃ TA = -55℃ TA = 150℃ 200 400 600 800 1000 1200 0.1 1 10 100 1000 10000 VBEon（mV） IC（mA） VCE = 1V IB =10mA IB =30mA IB =50mA IB =70mA IB =90mA IB =110mA IB =130mA IB =150mA 0 5 10 15 20 IC(A) VCE(V) 200 400 600 800 1000 1200 1400 1600 1800 2000 0 25 50 75 100 125 150 PD (mW) TA (°C) TMJD44H11 NPN Silicon Epitaxial Planar Transistor http://www.lgesemi.com Revision:20241022-P3 mail:lge@lgesemi.com

Fig 7 CJ vs. VR Cibo Cobo 100 1000 0.1 1 10 100 CJ (pF) VR（V） TMJD44H11 NPN Silicon Epitaxial Planar Transistor http://www.lgesemi.com Revision:20241022-P4 mail:lge@lgesemi.com

Package Outline Dimensions (Unit: mm) TO-252 Dimension Min. Max. A 5.05 5.65 B 5.80 6.40 C 6.25 6.85 D 2.20 2.40 E 0.40 0.60 F 9.71 10.31 G 5.05 5.65 H 2.10 2.50 I 0.70 0.90 J 0.50 0.70 K 0.40 0.60 Mounting Pad Layout (Unit: mm) TO-252 A C B D G H K F I J E 6.40 6.802.70 1.80 1.50 2.30 2.30 TMJD44H11 NPN Silicon Epitaxial Planar Transistor http://www.lgesemi.com Revision:20241022-P5 mail:lge@lgesemi.com