TMF8901B

TMF8901B AUK | Alldatasheet

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Technical content

□ Features - Power gain GP = 12.4 dB at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz GP = 14.7 dB at VDS = 6.0 V, IDset = 200 mA, f = 470 MHz - Output power POUT = 32.4 dBm at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz POUT = 34.7 dBm at VDS = 6.0 V, IDset = 200 mA, f = 470 MHz - Drain efficiency ηD = 60 % (typ.) □ Applications - VHF and UHF wide band amplifier SOT-223 □ Absolute Maximum Ratings (TA = 25 ℃) Pin Configuration 1. Gate 2. Source 3. Drain 4. Source Unit in mm Drain to Source Voltage Gate to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature 150 ℃ W Unit VDS 13.0 V Parameter Symbol Ptot 5.0 Ratings ℃Tstg -65 ~ 150 V ID 1.2 A VGS 4.0 Tch □ Marking 6.5 7.0 3.0 3.5 12 3 2.3 4.6 0.7 1 2 3 8901 TMF8901B Si RF LDMOS Transistor Semiconductor

□ Electrical Characteristics (TA = 25 ℃) dB-14.713f = 470 MHz, PIN = 20 dBm VDS = 6.0 V, IDset = 200 mA GPPower Gain dBm-34.733f = 470 MHz, PIN = 20 dBm VDS = 6.0 V, IDset = 200 mA POUTOutput Power mA-805-IopOperating Current %-61-ηDDrain Efficiency V-0.4-VGS = 4 V, ID = 600 mAVDSonDrain to Source On-Voltage %-64-ηDDrain Efficiency mA-600-IopOperating Current dBm-32.431f = 470 MHz, PIN = 20 dBm VDS = 4.5 V, IDset = 200 mA POUTOutput Power dB-12.411f = 470 MHz, PIN = 20 dBm VDS = 4.5 V, IDset = 200 mA GPPower Gain V--13IDSS = 10 ㎂BVDSSDrain to Source Breakdown Voltage V1.41.00.8VDS = 4.8 V, ID = 1 mAVthThreshold Voltage mS-700-VDS = 4.8 V, ID = 400 mAGmTransconductance ㎂1--VGSS = 3.0 VIGSSGate to Source Leakage Current ㎂10--VDSS = 8.5 V, VGS = 0 VIDSSDrain to Source Leakage Current Typ. Max. UnitMin.Test ConditionsSymbolParameter TMF8901B

□ Typical Characteristics ( TA = 25℃, unless otherwise specified) Output Power, Power Gain, Drain Efficiency vs. Input Power Output Power vs. Input Power Drain Current vs. Input Power 0 5 10 15 20 25 100 200 300 400 500 600 700 800 900 1000 1100 VDS = 4.5 V VDS = 6.0 V f = 470 MHz Iidle = 200 mA Drain Current, IDS (mA) Input Power, PIN (dBm) 0 5 10 15 20 25 f = 470 MHz Iidle = 200 mA VDS = 6.0 V POUT Output Power, POUT (dBm) Power Gain, GP (dB) Input Power, PIN (dBm) GP Drain Efficiency, ηD (%) ηD 0 5 10 15 20 25 f = 470 MHz Iidle = 200 mA VDS = 4.5 V POUT Output Power, POUT (dBm) Power Gain, GP (dB) Input Power, PIN (dBm) GP Drain Efficiency, ηD (%) ηD 0 5 10 15 20 25 VDS = 4.5 V VDS = 6 V f = 470 MHz Iidle = 200 mA Output Power, POUT (dBm) Input Power, PIN (dBm) TMF8901B

Power Gain, Drain Efficiency vs. Drain Idle Current Power Gain, Drain Efficiency vs. Drain Voltage 0 50 100 150 200 250 300 Power Gain, GP (dB) Drain Idle Current, Iidle (mA) f = 470 MHz PIN = 20 dBm VDS = 4.5 V ηD GP Drain Efficiency, ηD (%) 0 50 100 150 200 250 300 Power Gain, GP (dB) Drain Idle Current, Iidle (mA) f = 470 MHz PIN = 20 dBm VDS = 6.0 V ηD GP Drain Efficiency, ηD (%) 234567 Power Gain, GP (dB) Drain Voltage, VDS (V) f = 470 MHz Iidle = 200 mA PIN = 20 dBm ηDGP Drain Efficiency, ηD (%) TMF8901B

□ Test Circuit Schematic Diagram Test Board : 0.8mm FR4 glass epoxy C C=2.2 nF C C4ٛ C=2.2 nF MLIN TL2 L=8 mm W=1 . 3 7 mm Subst="MSub1" MLIN TL1 L=19 mm W=1 . 3 7 mm Subst="MSub1" C C=22 pF EE_MOS1 TMF8901B R R=6.8 kOhm R R=56 Ohm C C=2.2 nF C C=18 pF C C=100 nF C C=10 nF Port VDD Port VGG C C=10 nF L L=100 nH L Model=0.4x2.0x6T Port P_OUT Port P_IN TMF8901B