TMD7185-2 TOSHIBA | Alldatasheet
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Technical content
MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TMD7185-2 TECHNICAL DATA
FEATURES
n HIGH POWER n BROAD BAND INTERNALLY MATCHED P1dB=33.0dBm at 7.1GHz to 8.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=28.0dB at 7.1GHz to 8.5GHz ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS SYMBOL UNIT RATING Drain Supply Voltage VDD V 15 Gate Supply Voltage VGG V -10 Input Power Pin dBm 10 Flange Temperature Tf °C -30 ∼ +80 Storage Temperature Tstg °C -65 ∼ +175 RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX. Output Power at 1dB Gain Compression Point P1dB dBm 32.0 33.0 Power Gain at 1dB Gain Compression Point G1dB dB 27.0 28.0 Drain Current IDD A 1.4 1.7 Input VSWR VSWRin VDD= 10V VGG= -5V f = 7.1 – 8.5GHz 3.0 3rd Order Intermodulation Distortion IM3 Po (S.C.L.)=22.0 dBm dBc -42 -45 uThe information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Mar.2006
PACKAGE OUTLINE (2-11E1B) RECOMMENDED BIAS CONFIGURATION HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. Flanges of devices should be attached using screws and washers. Recommended torque is 0.18-0.20 N·m. Unit in mm j: No Connection k: RF IN l: No Connection m: VGG n: No Connection o: RF OUT p: No Connection q: VDD r: GND 2.5±0.2 10 ± 0.2 15 ± 0.2 18 ± 0.2 6 - 2.54± 0.2 8- 0.4± 0.1 7-R0.4 j k l m n o p q 0.1 ± 0.05 0.5 ± 0.2 0.5 ± 0.2 1.0 ± 0.3 2.5 MAX. r TMD7185-2 1,000pF 1,000pF 10-50mF 2:RF Input 6:RF Output GND : Base Plate 50W Matching 50W Matching 4 : VGG 3pF 3pF 1-3pF 1-3pF 10-50mF 8: VDD