TMD0305-2 TOSHIBA | Alldatasheet
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Technical content
MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TMD0305-2 T E C H N I C A L D A T A
FEATURES
H I G H P O W E R BROAD BAND INTERNALLY MATCHED P1dB=33.0dBm at 3.4GHz to 5.1GHz H I G H G A I N HERMETICALLY SEALED PACKAGE G1dB=22.0dB at 3.4GHz to 5.1GHz ABSOLUTE MAXIMUM RATINGS ( Ta= 25 °C ) CHARACTERISTICS SYMBOL UNIT RATING Drain Supply Voltage V DD V 15 Gate Supply Voltage V GG V -10 Input Power P in dBm 25 Flange Temperature T f °C -30 ∼ +80 Storage Temperature T stg °C -65 ∼ +175 RF PERFORMANCE SPECIFICATIONS ( Ta= 25 °C ) CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX. Output Power at 1dB Gain Compression Point P1dB dBm 32.0 33.0 ⎯ Power Gain at 1dB Gain Compression Point G1dB dB 20.0 22.0 ⎯ Drain Current* I DD A ⎯ 1.6 1.9 Input VSWR VSWRin VDD1=VDD2=VDD3 = 10V VGG= -5V f = 3.4 – 5.1GHz ⎯ ⎯ ⎯ 3.0 * I DD = IDD1 + IDD2 + IDD3 The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subjec t to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Mar.2006
PACKAGE OUTLINE (2-11E1A) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. Flanges of devices should be attached using screws and washers. Recommended torque is 0.18-0.20 N·m. Unit in mm c : VDD1 d : RF IN e : VDD2 f : VGG g : VDD3 h : RF OUT i : No Connection j : VDD3 k : GND 18 ±0.3 15 ±0.3 10 ±0.3 6-2.54 ±0.2 2.5 ± 0.3 C2.0 7-R0.4 8-0.4±0.1 0.1 ±0.05 0.5 ±0.2 0.5 ±0.2 1.0 ±0.3 2.5MAX. c d e fg h i j