Sensor

TMCS1101A2UQDR

Texas Instruments

TMCS1101 1.5% Precision, Basic Isolation Hall-Effect Current Sensor With 짹600-V Working Voltage

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Bridge DriverPassive / PFC Rectifier DC V+ AC DC V± Controller Current Sense Loads xxx x x x x TMCS1101 TMCS1101 TMCS1101 Current Sense Current SenseControl Control Product Folder Order Now T echnical Documents Tools & Software Support & Community An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. UNLESS OTHERWISE NOTED, this document contains PRODUCTION DATA. TMCS1101 SBOS825A –SEPTEMBER 2019–REVISED MAY 2020 TMCS11011.5%Precision,BasicIsolationHall-EffectCurrentSensorWith±600-V WorkingVoltage

1 Features

1• Total error: ±0.51% typical, ±1.15% maximum, –40ºC to 85ºC – Sensitivity error: ±0.5% – Offset error: 9 mA – Offset drift: 0.04 mA/ºC – Linearity error: 0.05%

Lifetime and environmental drift: <±0.5%
3-kVRMS isolation rating
Robust 600-V lifetime working voltage
Bidirectional and unidirectional current sensing
Zero drift internal reference
Operating supply range: 3 V to 5.5 V
Signal bandwidth: 80 kHz
Multiple sensitivity options: – TMCS1101A1U/B: 50 mV/A – TMCS1101A2U/B: 100 mV/A – TMCS1101A3U/B: 200 mV/A – TMCS1101A4U/B: 400 mV/A
Safety related certifications (planned) – UL 1577 Component Recognition Program – IEC/CB 62368-1

2 Applications

Motor and load control
Inverter and H-bridge current measurements
Power factor correction
Overcurrent protection
DC and ac power monitoring

3 Description

The TMCS1101 is a galvanically isolated Hall-effect current sensor capable of dc or ac current measurement with high accuracy, excellent linearity, and temperature stability. A low-drift, temperature- compensated signal chain provides < 1.5% full-scale error across the device temperature range. The input current flows through an internal 1.8-mΩ conductor that generates a magnetic field measured by an integrated Hall-effect sensor. This structure eliminates external concentrators and simplifies design. Low conductor resistance minimizes power loss and thermal dissipation. Inherent galvanic insulation provides a 600-V lifetime working voltage and 3-kVRMS basic isolation between the current path and circuitry. Integrated electrical shielding enables excellent common-mode rejection and transient immunity. The output voltage is proportional to the input current with four sensitivity options. Fixed sensitivity allows the TMCS1101 to operate from a single 3-V to 5.5-V power supply, eliminates ratiometry errors, and improves supply noise rejection. The current polarity is considered positive when flowing into the positive input pin. Both unidirectional and bidirectional sensing variants are available. The TMCS1101 draws a maximum supply current of 6 mA, and all sensitivity options are specified over the operating temperature range of –40°C to +125°C. Device Information(1) PART NUMBER PACKAGE BODY SIZE (NOM) TMCS1101 SOIC (8) 4.90 mm × 3.90 mm (1) For all available packages, see the package option addendum at the end of the data sheet. Typical Application

13.3 Receiving Notification of Documentation Updates 39

14 Mechanical, Packaging, and Orderable

4 Revision History

Changes from Original (September 2019) to Revision A Page

3IN± 6 NC 4IN± 5 GND Not to scale TMCS1101 www.ti.com SBOS825A –SEPTEMBER 2019–REVISED MAY 2020 Product Folder Links: TMCS1101 Submit Documentation FeedbackCopyright © 2019–2020, Texas Instruments Incorporated (1) Linear range limited by swing to supply and ground. (2) Advanced Information (3) Current levels must remain below both allowable continuous DC/RMS and transient peak current safe operating areas to not exceed device thermal limits. See Safe Operating Area section.

5 Device Comparison Table

SENSITIVITY ZERO CURRENT OUTPUT VOLTAGE, IIN LINEAR MEASUREMENT RANGE(1) ΔVOUT / ΔIIN+, IN– VOUT,0A VS = 5 V VS = 3.3 V TMCS1101A1B(2) 50 mV/A 0.5 × VS ±46 A(3) ±29 A(3) TMCS1101A2B(2) 100 mV/A ±23 A(3) ±14.5 A TMCS1101A3B(2) 200 mV/A ±11.5 A ±7.25 A TMCS1101A4B 400 mV/A ±5.75 A -- TMCS1101A1U(2) 50 mV/A 0.1 × VS TMCS1101A2U(2) 100 mV/A –4.5 A → 43A(3) –2.8 A → 27.7 A(3) TMCS1101A3U(2) 200 mV/A –2.25 A → 21.5 A(3) –1.4 A → 13.85 A TMCS1101A4U(2) 400 mV/A –1.12 A → 10.75 A --

6 Pin Configuration and Functions

NO. NAME

1 IN+ Analog input Input current positive pin

2 IN+ Analog input Input current positive pin

3 IN– Analog input Input current negative pin

4 IN– Analog input Input current negative pin

5 GND Analog Ground

6 NC No Connect No connect. Pin can tolerate a capacitive or resistive connection to GND or VS (recommend short to GND if acceptable).

7 VOUT Analog output Output voltage

8 VS Analog Power supply

SBOS825A –SEPTEMBER 2019–REVISED MAY 2020 www.ti.com Product Folder Links: TMCS1101 Submit Documentation Feedback Copyright © 2019–2020, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1) MIN MAX UNIT VS Supply voltage GND – 0.3 6 V NC Input NC GND – 0.3 (VS) + 0.3 V Analog output VOUT GND – 0.3 (VS) + 0.3 V TJ Junction temperature –65 150 °C Tstg Storage temperature –65 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.2 ESD Ratings

V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000 (1) VIN+ and VIN– refer to the voltage at input current pins IN+ and IN–, relative to pin 5 (GND). (2) Input current safe operating area is constrained by junction temperature. Recommended condition based on the TMCS1101EVM. Input current rating is derated for elevated ambient temperatures.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT VIN+,VIN– (1) Input voltage –600 600 VPK VS Operating supply voltage, TMCS1101A1B-3U, A1U-3U 3 5 5.5 V VS Operating supply voltage, TMCS1101A4B, A4U 4.5 5 5.5 V TA (2) Operating free-air temperature –40 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. (2) Applies when device mounted on TMCS1101EVM. For more details, see the Safe Operating Area section.

7.4 Thermal Information

THERMAL METRIC(1) TMCS1101(2) UNITD (SOIC)

8 PINS

RθJA Junction-to-ambient thermal resistance 36.6 °C/W RθJC(top) Junction-to-case (top) thermal resistance 50.7 °C/W RθJB Junction-to-board thermal resistance 9.6 °C/W ΨJT Junction-to-top characterization parameter –0.1 °C/W ΨJB Junction-to-board characterization parameter 11.7 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W

7.5 Power Ratings

VS = 5.5 V, TA = 125℃, TJ = 150℃, device soldered on TMCS1101EVM. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT PD Maximum power dissipation (both sides) 673 mW PD1 Maximum power dissipation (current input, side- 1) IIN = 16 A 640 mW PD2 Maximum power dissipation by (side-2) VS = 5.5 V, IQ = 6mA, no VOUT load 33 mW

SBOS825A –SEPTEMBER 2019–REVISED MAY 2020 www.ti.com Product Folder Links: TMCS1101 Submit Documentation Feedback Copyright © 2019–2020, Texas Instruments Incorporated (1) Apply creepage and clearance requirements according to the specific equipment isolation standards of an application. Take care to maintain the creepage and clearance distance of the board design to make sure that the mounting pads of the isolator on the printed- circuit board do not reduce this distance. Creepage and clearance on a printed-circuit board become equal in certain cases. Techniques such as inserting grooves, ribs, or both on a printed circuit board are used to help increase these specifications. (2) Testing is carried out in air or oil to determine the intrinsic surge immunity of the isolation barrier. (3) Apparent charge is electrical discharge caused by a partial discharge (pd). (4) All pins on each side of the barrier tied together creating a two-terminal device

7.6 Insulation Specifications

PARAMETER TEST CONDITIONS VALUE UNIT GENERAL CLR External clearance(1) Shortest terminal-to-terminal distance through air 4 mm CPG External creepage(1) Shortest terminal-to-terminal distance across the package surface 4 mm DTI Distance through the insulation Minimum internal gap (internal clearance) 60 µm CTI Comparative tracking index DIN EN 60112; IEC 60112 >400 V Material group II Overvoltage category Rated mains voltage ≤ 150 VRMS I-IV Rated mains voltage ≤ 300 VRMS I-III VIORM Maximum repetitive peak isolation voltage AC voltage (bipolar) 600 VPK VIOWM Maximum working isolation voltage AC voltage (sine wave); Time Dependent Dielectric Breakdown test, see Figure 31 424 VRMS DC voltage 600 VDC VIOTM Maximum transient isolation voltage VTEST = VIOTM = 4242VPK, t = 60 s (qualification); VTEST = 1.2 × VIOTM = 5090VPK, t = 1 s (100% production) 4242 VPK VIOSM Maximum surge isolation voltage(2) Test method per IEC 62368-1, 1.2/50 µs waveform, VTEST = 1.3 × VIOSM = 7800VPK (qualification) 6000 VPK qpd Apparent charge(3) Method a: After I/O safety test subgroup 2/3, Vini = VIOTM = 4242VPK, tini = 60 s; Vpd(m) = 1.2 × VIORM = 700VPK, tm = 10 s pC Method a: After environmental tests subgroup 1, Vini = VIOTM = 4242VPK, tini = 60 s; Vpd(m) = 1.2 × VIORM = 700VPK, tm = 10 s Method b3: At routine test (100% production) and preconditioning (type test) Vini = 1.2 × VIOTM = 5090VPK, tini = 1 s; Vpd(m) = 1.2 × VIOTM = 5090VPK, tm = 1 s CIO Barrier capacitance, input to output(4) VIO = 0.4 sin (2πft), f = 1 MHz 0.6 pF RIO Isolation resistance, input to output(4) VIO = 500 V, TA = 25°C >1012 Ω VIO = 500 V, 100°C ≤ TA ≤ 125°C >1011 Ω VIO = 500 V at TS = 150°C >109 Ω Pollution degree 2 UL 1577 VISO Withstand isolation voltage VTEST = VISO, t = 60 s (qualification); VTEST = 1.2 × VISO, t = 1 s (100% production) 3000 VRMS

7.7 Safety-Related Certifications

Pending recognition under UL 1577 Component Recognition Program Pending certification according to IEC 62368-1 CB File number: Pending Client ID number: Pending

www.ti.com SBOS825A –SEPTEMBER 2019–REVISED MAY 2020 Product Folder Links: TMCS1101 Submit Documentation FeedbackCopyright © 2019–2020, Texas Instruments Incorporated (1) The maximum safety temperature, TS, has the same value as the maximum junction temperature, TJ, specified for the device. The IS and PS parameters represent the safety current and safety power respectively. The maximum limits of IS and PS should not be exceeded. These limits vary with the ambient temperature, TA. The junction-to-air thermal resistance, RθJA, in the Thermal Information table is that of a device installed on the TMCS1101EVM. Use these equations to calculate the value for each parameter: TJ = TA + RθJA × P, where P is the power dissipated in the device. TJ(max) = TS = TA + RθJA × PS, where TJ(max) is the maximum allowed junction temperature. PS = IS × VI, where VI is the maximum input voltage.

7.8 Safety Limiting Values

Safety limiting intends to minimize potential damage to the isolation barrier upon failure of input or output circuitry. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT IS Safety input current (side 1)(1) RθJA = 36.6°C/W, TJ = 150°C, TA = 25°C, see Figure 18 30 A IS Safety input, output, or supply current (side 2)(1) RθJA = 36.6°C/W, VI = 5 V, TJ = 150°C, TA = 25°C, see Figure 19 0.68 PS Safety input, output, or total power(1) RθJA = 36.6°C/W, TJ = 150°C, TA = 25°C, see Figure 20 3.4 W TS Safety temperature(1) 150 ℃

SBOS825A –SEPTEMBER 2019–REVISED MAY 2020 www.ti.com Product Folder Links: TMCS1101 Submit Documentation Feedback Copyright © 2019–2020, Texas Instruments Incorporated (1) Centered parameter based on TMCS1101EVM PCB layout. See Layout section. Device must be operated below maximum junction temperature. (2) Lifetime and environmental drift specifications based on three lot AEC-Q100 qualification stress test results. Typical values are population mean+1σ from worst case stress test condition. Min/max are tested device population mean±6σ; devices tested in AEC-Q100 qualification stayed within min/max limits for all stress conditions. See Lifetime and Environmental Stability section for more details. (3) Excludes effect of external magnetic fields. See the Accuracy Parameters section for details to calculate error due to external magnetic fields.

7.9 Electrical Characteristics

at TA = 25°C, VS = 5 V (unless otherwise noted) PARAMETERS TEST CONDITIONS MIN TYP MAX UNIT OUTPUT Sensitivity(1) TMCS1101A1B 50 mV/A TMCS1101A2B 100 mV/A TMCS1101A3B 200 mV/A TMCS1101A4B 400 mV/A TMCS1101A1U 50 mV/A TMCS1101A2U 100 mV/A TMCS1101A3U 200 mV/A TMCS1101A4U 400 mV/A Sensitivity error 0.05 V ≤ VOUT ≤ VS – 0.2 V, TA= 25ºC ±0.3% ±0.8% TMCS1101A1U, 0.05 V ≤ VOUT ≤ 3 V, TA= 25ºC ±0.3% ±0.8% Sensitivity error, including lifetime and environmental drift (2) 0.05 V ≤ VOUT ≤ VS – 0.2 V, TA= 25ºC -0.47% ±1.02% Sensitivity error 0.05 V ≤ VOUT ≤ VS – 0.2 V, TA= –40ºC to +85ºC ±0.5% ±1% TMCS1101A1U, 0.05 V ≤ VOUT ≤ 3 V, TA= –40ºC to +85ºC ±0.5% ±1% 0.05 V ≤ VOUT ≤ VS – 0.2 V, TA= –40ºC to TMCS1101A1U, 0.05 V ≤ VOUT ≤ 3 V, TA= Nonlinearity error VOUT = 0.5 V to VS – 0.5 V ±0.05% TMCS1101A1U, VOUT = 0.5 V to 3 V ±0.05% VOE Output voltage offset error(3) TMCS1101A1B ±1 ±4.5 mV TMCS1101A2B ±1 ±6 mV TMCS1101A3B ±1.3 ±9 mV TMCS1101A4B ±2.4 ±21 mV TMCS1101A1U ±1.2 ±5 mV TMCS1101A2U ±1 ±8 mV TMCS1101A3U ±2.3 ±10 mV TMCS1101A4U ±12.4 ±28 mV Output voltage offset drift TMCS1101A1B, TA= –40ºC to +125ºC ±5.4 ±14 µV/℃ TMCS1101A2B, TA= –40ºC to +125ºC ±3.5 ±21 µV/℃ TMCS1101A3B, TA= –40ºC to +125ºC ±7.4 ±37 µV/℃ TMCS1101A4B, TA= –40ºC to +125ºC ±27.6 ±140 µV/℃ TMCS1101A1U, TA= –40ºC to +125ºC ±7 ±16 µV/℃ TMCS1101A2U, TA= –40ºC to +125ºC ±9 ±22 µV/℃ TMCS1101A3U, TA= –40ºC to +125ºC ±14 ±41 µV/℃ TMCS1101A4U, TA= –40ºC to +125ºC ±36 ±144 µV/℃

www.ti.com SBOS825A –SEPTEMBER 2019–REVISED MAY 2020 Product Folder Links: TMCS1101 Submit Documentation FeedbackCopyright © 2019–2020, Texas Instruments Incorporated Electrical Characteristics (continued) at TA = 25°C, VS = 5 V (unless otherwise noted) PARAMETERS TEST CONDITIONS MIN TYP MAX UNIT (4) RTI = referred-to-input. Output voltage is divided by device sensitivity to refer signal to input current. See the Parameter Measurement Information section. (5) Thermally limited by junction temperature. Applies when device mounted on TMCS1101EVM. For more details, see the Safe Operating Area section. IOS Offset error, RTI(3)(4) TMCS1101A1B ±20 ±90 mA TMCS1101A2B ±10 ±60 mA TMCS1101A3B ±6.5 ±45 mA TMCS1101A4B ±6 ±52.5 mA TMCS1101A1U ±24 ±100 mA TMCS1101A2U ±10 ±80 mA TMCS1101A3U ±11.5 ±50 mA TMCS1101A4U, ±31 ±70 mA Offset error temperature drift, RTI(4) TMCS1101A1B, TA= –40ºC to +125ºC ±108 ±280 µA/°C TMCS1101A2B, TA= –40ºC to +125ºC ±35 ±210 µA/°C TMCS1101A3B, TA= –40ºC to +125ºC ±37 ±185 µA/°C TMCS1101A4B, TA= –40ºC to +125ºC ±69 ±350 µA/°C TMCS1101A1U, TA= –40ºC to +125ºC ±140 ±320 µA/°C TMCS1101A2U, TA= –40ºC to +125ºC ±90 ±220 µA/°C TMCS1101A3U, TA= –40ºC to +125ºC ±70 ±205 µA/°C TMCS1101A4U, TA= –40ºC to +125ºC ±90 ±360 µA/°C PSRR Power-supply rejection ratio VS = 3 V to 5.5 V, TMCS1101A1U/B,A2U/B,A3U/B, TA= –40ºC to +125ºC ±1 ±3 mV/V VS = 4.5 V to 5.5 V, TMCS1101A4U/B, TA= –40ºC to +125ºC ±1 ±6.5 mV/V CMTI Common mode transient immunity 50 kV/µs CMRR Common mode rejection ratio, RTI(4) DC to 60Hz 5 uA/V Zero current VOUT (3) TMCS1101A<1-4>U 0.1*VS V/V Zero current VOUT (3) TMCS1101A<1-4>B 0.5*VS V/V Noise density, RTI(4) TMCS1101A1B 380 μA/√Hz TMCS1101A2B 330 μA/√Hz TMCS1101A3B 300 μA/√Hz TMCS1101A4B 225 μA/√Hz TMCS1101A1U 380 μA/√Hz TMCS1101A2U 330 μA/√Hz TMCS1101A3U 300 μA/√Hz TMCS1101A4U 225 μA/√Hz INPUT RIN Input conductor resistance IN+ to IN– 1.8 mΩ Input conductor resistance temperature drift TA= –40ºC to +125ºC 4.4 μΩ/°C G Magnetic coupling factor TA= 25ºC 1.1 mT/A IIN,max Allowable continuous RMS current (5) TA= 25ºC 30 A TA= 85ºC 25 A TA= 105ºC 22.5 A TA= 125ºC 16 A NC (Pin 6) input impedance Over allowable range, GND < VNC < VS 1 MΩ VOLTAGE OUTPUT ZOUT Closed loop output impedance f = 1 Hz to 1 kHz 0.2 Ω f = 10 kHz 2 Ω Maximum capacitive load No sustained oscillation 1 nF Short circuit output current VOUT short to ground, short to VS 90 mA Swing to VS power-supply rail RL = 10 kΩ to GND, TA= –40ºC to +125ºC VS – 0.02 VS – 0.1 V

SBOS825A –SEPTEMBER 2019–REVISED MAY 2020 www.ti.com Product Folder Links: TMCS1101 Submit Documentation Feedback Copyright © 2019–2020, Texas Instruments Incorporated Electrical Characteristics (continued) at TA = 25°C, VS = 5 V (unless otherwise noted) PARAMETERS TEST CONDITIONS MIN TYP MAX UNIT (6) Refer to the Transient Response section for details of frequency and transient response of the device. Swing to GND RL = 10 kΩ to GND, TA= –40ºC to +125ºC VGND + 5 VGND + 10 mV FREQUENCY RESPONSE BW Bandwidth(6) –3-dB Bandwidth 80 kHz SR Slew rate(6) Slew rate of output amplifier during single transient step. 1.5 V/µs tr Response time(6) Time between the input current step reaching 90% of final value to the sensor output reaching 90% of its final value, for a 1V output transition. 6.5 µs tp Propagation delay(6) Time between the input current step reaching 10% of final value to the sensor output reaching 10% of its final value, for a 1V output transition. 4 µs tr,SC Current overload response time(6) Time between the input current step reaching 90% of final value to the sensor output reaching 90% of its final value. Input current step amplitude is twice full scale output range. 5 µs tp,SC Current overload propagation delay(6) Time between the input current step reaching 10% of final value to the sensor output reaching 10% of its final value. Input current step amplitude is twice full scale output range. 3 µs Current overload recovery time Time from end of current causing output saturation condition to valid output 15 µs POWER SUPPLY IQ Quiescent current TA = 25ºC 4.5 5.5 mA TA = –40ºC to +125ºC 6 mA Power on time Time from VS > 3 V to valid output 25 ms

7.10 Typical Characteristics

Figure 1. TMCS1101B Sensitivity Error vs Temperature Figure 2. TMCS1101U Sensitivity Error vs Temperature Figure 3. TMCS1101B Input Offset Current vs Temperature Figure 4. TMCS1101U Input Offset Current vs Temperature Figure 5. Non-Linearity vs Temperature Figure 6. Non-Linearity vs Temperature

7.10.1 Insulation Characteristics Curves

Figure 18. Thermal Derating Curve for Safety-Limiting Figure 19. Thermal Derating Curve for Safety-Limiting Figure 20. Thermal Derating Curve for Safety-Limiting Power

8 Parameter Measurement Information

8.1 Accuracy Parameters

VOUT is the analog output voltage.
S is the ideal sensitivity of the device.
IIN is the isolated input current.
VOUT,0A is the zero current output voltage for the device variant. (1)

8.1.1 Sensitivity Error

Sensitivity is the proportional change in the sensor output voltage due to a change in the input conductor current. of the TMCS1101 is tested and calibrated at the factory for high accuracy. Figure 21. Sensitivity, Offset, and Nonlinearity Error sensitivity error at any temperature within the range.

eS is the sensitivity error.
Sfit is the best fit sensitivity.
SIdeal is the ideal sensitivity. (2)

8.1.2 Offset Error and Offset Error Drift

error is a single error source, however, and must only be included once in error calculations. devices (AxU) or 50% of VS for bidirectional devices (AxB), as shown in Equation 3 and Equation 4, respectively.

S PSRR IN PSRR * (V 5) Se (%) I NL NL FS Ve 100% * V q OS OS,25 C OS,drift I , T IN AI I T Ce % I OS OEI V / S OE OUT,0A SV V V * 0.5 OE OUT,0A SV V V * 0.1 TMCS1101 SBOS825A –SEPTEMBER 2019–REVISED MAY 2020 www.ti.com Product Folder Links: TMCS1101 Submit Documentation Feedback Copyright © 2019–2020, Texas Instruments Incorporated Accuracy Parameters (continued) (3) where

VOUT,0A is the device output voltage with zero input current. (4) The offset error includes errors in the internal reference, the magnetic offset of the Hall sensor and any offset voltage errors of the signal chain. The input referred (RTI) offset error is the output voltage offset error divided by the sensitivity of the device, shown in Equation 5. Refer the offset error to the input of the device to allow for easier total error calculations and direct comparison to input current levels. No matter how the calculations are done, the error sources quantified by VOE and IOS are the same, and should only be included once for error calculations. (5) Offset error drift is the change in the input-referred offset error per degree Celsius change in ambient temperature. This parameter is reported in µA/°C. To convert offset drift to an absolute offset for a given change in temperature, multiply the drift by the change in temperature and convert to percentage, as in Equation 6. where
IOS,drift is the specified input-referred device offset drift.
ΔT is the temperature range from 25°C. (6)

8.1.3 Nonlinearity Error

Nonlinearity is the deviation of the output voltage from a linear relationship to the input current. Nonlinearity voltage, as shown in Figure 21, is the maximum voltage deviation from the best-fit line based on measured parameters, calculated by Equation 7. VNL = VOUT,MEAS – (IMEAS × Sfit + VOUT,0A) where

VOUT,MEAS is the voltage output at maximum deviation from best fit.
IMEAS is the input current at maximum deviation from best fit.
Sfit is the best-fit sensitivity of the device.
VOUT,0A is the device zero current output voltage. (7) Nonlinearity error (eNL) for the TMCS1101 is the nonlinearity voltage specified as a percentage of the full-scale output range (VFS), as shown in Equation 8. (8)

8.1.4 Power Supply Rejection Ratio

Power supply rejection ratio (PSRR) is the change in device offset due to variation of supply voltage from the nominal 5 V. The error contribution at the input current of interest can be calculated by Equation 9. where

VS is the operational supply voltage.
S is the device senstivity. (9)

B IN B Ge (%) I EXT EXT B BI G OUT EXT Hall V IN Hall V OUT,0AV B * S * A I * G * S * A V Hall VS G * S * A CM CMRR IN CMRR * Ve (%) I TMCS1101 www.ti.com SBOS825A –SEPTEMBER 2019–REVISED MAY 2020 Product Folder Links: TMCS1101 Submit Documentation FeedbackCopyright © 2019–2020, Texas Instruments Incorporated Accuracy Parameters (continued)

8.1.5 Common-Mode Rejection Ratio

Common-mode rejection ratio (CMRR) quantifies the effective input current error due to a varying voltage on the isolated input of the device. Due to magnetic coupling and galvanic isolation of the current signal, the TMCS1101 has very high rejection of input common-mode voltage. Percent error contribution from input common-mode variation can be calculated by Equation 10. where

VCM is the maximum operational ac or dc voltage on the input of the device. (10)

8.1.6 External Magnetic Field Errors

The TMCS1101 does not have stray field-rejection capabilities, so external magnetic fields from adjacent high- current traces or nearby magnets can impact the output measurement. The total sensitivity (S) of the device is comprised of the initial transformation of input current to magnetic field quantified as the magnetic coupling factor (G), as well as the sensitivity of the Hall element and the analog circuitry that is factory calibrated to provide a final sensitivity. The output voltage is proportional to the input current by the device sensitivity, as defined in Equation 11. where

S is the TMCS1101 sensitivity in mV/A.
G is the magnetic coupling factor in mT/A.
SHall is the sensitivity of the Hall plate in mV/mT.
AV is the calibrated analog circuitry gain in V/V. (11) An external field, BEXT, is measured by the Hall sensor and signal chain, in addition to the field generated by the leadframe current, and is added as an extra input term in the total output voltage function: (12) Observable from Equation 12 is that the impact of an external field is an additional equivalent input current signal, IBEXT, shown in Equation 13. This effective additional input current has no dependence on Hall or analog circuitry sensitivity, so all gain variants have equivalent input-referred current error due to external magnetic fields. (13) This additional current error generates a percentage error defined by Equation 14. (14)

8.2 Transient Response Parameters

The transient response of the TMCS1101 is impacted by the 250 kHz sampling rate as defined in Transient Response. Figure 22 shows the TMCS1101 response to an input current step sufficient to generate a 1V output change. The typical 4us sampling window can be observed as a periodic step. This sampling window dominates the response of the device, and the response will have some probabilistic nature due to alignment of the input step and the sampling window interval.

Figure 22. Transient Step Response

8.2.1 Slew Rate

Figure 23. Because the device often requires two sampling windows to reach a full 90% settling of its final value, this slew rate is not equal to the 10%-90% transition time for the full output swing. Figure 23. Small Current Input Step Transient Response

8.2.2 Propagation Delay and Response Time

reaching 90% of its final value, for an input current step sufficient to cause a 1V transition on the output.

8.2.3 Current Overload Parameters

in a similar manner to the case of a small input current step, as shown in Figure 24.

10 V / S

Figure 24. Current Overload Transient Response

8.2.4 CMTI, Common Mode Transient Immunity

the specified CMTI can be supported with sufficient filtering or blanking time after common mode transitions.

8.3 Safe Operating Area

under which the system will be operated.

8.3.1 Continuous DC or Sinusoidal AC Current

adding heat sinking structures to the area of the device can all improve thermal performance. Figure 25. Maximum Continuous RMS Current vs Ambient Temperature

8.3.2 Repetitive Pulsed Current SOA

approaches the continuous current SOA for a rms value defined by Equation 15.

IIN,RMS is the RMS input current level
IIN,P is the pulse peak input current
D is the pulse duty cycle (15)

8.3.3 Single Event Current Capability

Figure 30. Single-Pulse Leadframe Capability

IN± Hall Element Bias Temperature Compensation Offset Cancellation VOUTPrecision Amplifier Output Amplifier Isolation Barrier VS GND Reference Sampling GND VS TMCS1101 www.ti.com SBOS825A –SEPTEMBER 2019–REVISED MAY 2020 Product Folder Links: TMCS1101 Submit Documentation FeedbackCopyright © 2019–2020, Texas Instruments Incorporated

9 Detailed Description

9.1 Overview

The TMCS1101 is a precision Hall-effect current sensor, featuring a 600-V basic isolation working voltage, < 1.5% full-scale error across temperature, and device options providing both unidirectional and bidirectional current sensing. Input current flows through a conductor between the isolated input current pins. The conductor has a 1.8-mΩ resistance at room temperature for low power dissipation and a 20-A RMS continuous current handling capability up to 105°C ambient temperature on the TMCS1101EVM. The low-ohmic leadframe path reduces power dissipation compared to alternative current measurement methodologies, and does not require any external passive components, isolated supplies, or control signals on the high-voltage side. The magnetic field generated by the input current is sensed by a Hall sensor and amplified by a precision signal chain. The device can be used for both ac and dc current measurements and has a bandwidth of 80 kHz. There are multiple fixed-sensitivity device variants for a wide option of linear sensing ranges, and the TMCS1101 can operate with a low voltage supply from 3 V to 5.5 V. The TMCS1101 is optimized for high accuracy and temperature stability, with both offset and sensitivity compensated across the entire operating temperature range.

9.2 Functional Block Diagram

9.3 Feature Description

9.3.1 Current Input

Input current to the TMCS1101 passes through the isolated side of the package leadframe through the IN+ and IN– pins. The current flow through the package generates a magnetic field that is proportional to the input current, and measured by a galvanically isolated, precision, Hall sensor IC. As a result of the electrostatic shielding on the Hall sensor die, only the magnetic field generated by the input current is measured, thus limiting input voltage switching pass-through to the circuitry. This configuration allows for direct measurement of currents with high-voltage transients without signal distortion on the current-sensor output. The leadframe conductor has a nominal resistance of 1.8 mΩ at 25°, and has a typical positive temperature coefficient as defined in Electrical Characteristics.

9.3.2 Input Isolation

The separation between the input conductor and the Hall sensor die due to the TMCS1101 construction provides inherent galvanic isolation between package pins 1-4 and pins 5-8. Insulation capability is defined according to certification agency definitions and using industry-standard test methods as defined in the Insulation Specifications table. Assessment of device lifetime working voltages follow the VDE 0884-11 standard for basic insulation, requiring time-dependent dielectric breakdown (TDDB) data-projection failure rates of less than 1000 part per million (ppm), and a minimum insulation lifetime of 20 years. The VDE standard also requires an additional safety margin of 20% for working voltage, and a 30% margin for insulation lifetime, translating into a minimum required lifetime of 26 years at 509 VRMS for the TMCS1101.

the component in an end system. Figure 31. Insulation Lifetime

9.3.3 High-Precision Signal Chain

through the leadframe of the isolated input.

9.3.3.1 Temperature Stability

drastically improves system-level performance across the required operating conditions. precision, even a system with no calibration can reach < 1.5% of total error current-sensing capability.

Figure 32. Offset Error Drift Across Temperature (B Figure 33. Offset Error Drift Across Temperature (U Figure 34. Sensitivity Drift Across Temperature (B Figure 35. Sensitivity Drift Across Temperature (U

9.3.3.2 Lifetime and Environmental Stability

performance variation due to aging is vastly improved compared to typical magnetic sensors.

Figure 36. Sensitivity Error after 135°C, 85% RH HAST Figure 37. Sensitivity Error Drift after AEC-Q100 High Figure 38. Input-Referred Offset Drift after AEC-Q100 High Temperature Operating Life Stress Test

9.3.3.3 Frequency Response

increasing distortion levels.

Figure 39. Normalized Gain, All Variants Figure 40. Normalized Phase, All Variants

9.3.3.4 Transient Response

Figure 41. Response Behavior to 10kHz Sine Wave Input Current amplitude of the first and second sampling intervals.

Figure 42. Transient Response to Input-Current Step Sufficient for 1-V Output Swing timing and size of the input current transition determines both the time and amplitude of the first output transition. In either case, the total response time is slightly longer than one integration period. Figure 43. Transient Response to a Large Input Current Step

9.3.4 Internal Reference Voltage

devices have a zero-current output voltage set by Equation 17. devices and a unidirectional measurement range for the TMCS1101A2U devices, as shown in Figure 44.

Figure 44. Output Voltage Relationship to Input Current for TMCS1101A2B and TMCS1101A2U

9.3.5 Current-Sensing Measurable Ranges

The TMCS1101 measurable input current range depends on the device variant, as well as the analog supply VS. and GND is calculated by equations Equation 18 and Equation 19. yields maximum and minimum measurable input current ranges described by Equation 20 and Equation 21.

IIN,MAX+ is the maximum linear measurable positive input current.
IIN,MAX- is the maximum linear measurable negative input current.
S is the sensitivity of the device variant.
VOUT,0A is the appropriate zero current output voltage. (21) TMCS1101A<1-4>B variants accommodate bidirectional current sensing by creating zero-current output voltage equal to half of the supply (VS) potential, while TMCS1101A<1-4>U variants provide most of the measurable range for positive currents.

9.4 Device Functional Modes

9.4.1 Power-Down Behavior

SBOS825A –SEPTEMBER 2019–REVISED MAY 2020 www.ti.com Product Folder Links: TMCS1101 Submit Documentation Feedback Copyright © 2019–2020, Texas Instruments Incorporated NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality.

10.1 Application Information

The key feature sets of the TMCS1101 provide significant advantages in any application where an isolated current measurement is required.

Galvanic isolation provides a high isolated working voltage and excellent immunity to input voltage transients.
Hall based measurement simplifies system level solution without the need for a power supply on the high voltage (HV) side.
An input current path through the low impedance conductor minimizes power dissipation.
Excellent accuracy and low temperature drift eliminate the need for multipoint calibrations without sacrificing system performance.
A wide operating supply range enables a single device to function across a wide range of voltage levels. These advantages increase system-level performance while minimizing complexity for any application where precision current measurements must be made on isolated currents. Specific examples and design requirements are detailed in the following section.

OS, T EXT 2 2 2 2 RSS, T I PSRR CMRR B S, T NLe (%) e e e e e e '' ' OS EXT 2 2 2 2 RSS I PSRR CMRR B S NLe (%) e e e e e e q OS OS,25 C OS,drift I , T IN AI I T Ce % I EXT EXT B IN B Ge (%) I S PSRR IN PSRR * (V 5) Se (%) I CM CMRR IN CMRR * Ve (%) I OS OS I IN Ie (%) I TMCS1101 www.ti.com SBOS825A –SEPTEMBER 2019–REVISED MAY 2020 Product Folder Links: TMCS1101 Submit Documentation FeedbackCopyright © 2019–2020, Texas Instruments Incorporated Application Information (continued)

10.1.1 Total Error Calculation Examples

Total error can be calculated for any arbitrary device condition and current level. Error sources considered should include input-referred offset current, power-supply rejection, input common-mode rejection, sensitivity error, nonlinearity, and the error caused by any external fields. Compare each of these error sources in percentage terms, as some are significant drivers of error and some have inconsequential impact to current error. Offset (Equation 22), CMRR (Equation 23), PSRR (Equation 24), and external field error (Equation 25) are all referred to the input, and so, are divided by the actual input current IIN to calculate percentage errors. For calculations of sensitivity error and nonlinearity error, the percentage limits explicitly specified in the Electrical Characteristics table can be used. (22) (23) (24) (25) When calculating error contributions across temperature, only the input offset current and sensitivity error contributions vary significantly. For determining offset error over a given temperature range (ΔT), use Equation 26 to calculate total offset error current. Sensitivity error is specified for both –40°C to 85°C and –40°C to 125°C. The appropriate specification should be used based on application operating ambient temperature range. (26) To accurately calculate the total expected error of the device, the contributions from each of the individual components above must be understood in reference to operating conditions. To account for the individual error sources that are statistically uncorrelated, a root sum square (RSS) error calculation should be used to calculate total error. For the TMCS1101, only the input referred offset current (IOS), CMRR, and PSRR are statistically correlated. These error terms are lumped in an RSS calculation to reflect this nature, as shown in Equation 27 for room temperature and Equation 28 for across a given temperature range. The same methodology can be applied for calculating typical total error by using the appropriate error term specification. (27) (28) The total error calculation has a strong dependence on the actual input current; therefore, always calculate total error across the dynamic range that is required. These curves asymptotically approach the sensitivity and nonlinearity error at high current levels, and approach infinity at low current levels due to offset error terms with input current in the denominator. Key figures of merit for any current-measurement system include the total error percentage at full-scale current, as well as the dynamic range of input current over which the error remains below some key level. Figure 45 illustrates the RSS maximum total error as a function of input current for a TMCS1101A2B at room temperature and across the full temperature range with VS of 5 V.

Figure 45. RSS Error vs Input Current

10.1.1.1 Room Temperature Error Calculations

additional error from CMRR is negligible, and can typically be ignored for total error calculations. Table 1. Total Error Calculation: Room Temperature Example

10.1.1.2 Full Temperature Range Error Calculations

–40°C to 85°C temperature range below in Table 2.

Table 2. Total Error Calculation: –40°C to 85°C Example

10.2 Typical Application

driving the inductive load presented by a three phase motor. Figure 46. Inline Motor Phase Current Sensing

10.2.1 Design Requirements

current measurement of ±20 A is required. Table 3. Example Application Design Requirements

10.2.2 Detailed Design Procedure

by VOUT,0A, which is internally set to half of the analog supply as defined by Equation 29.

11 Power Supply Recommendations

The TMCS1101 only requires a power supply (VS) on the low-voltage isolated side, which powers the analog circuitry independent of the isolated current input. VS determines the full-scale output range of the analog output VOUT, and can be supplied with any voltage between 3 V and 5.5 V. The TMCS1101 zero-current output voltage is derived from VS using a resistor divider; therefore, take care to optimize the power supply path for both noise and stability across temperature to provide the highest precision measurement. To filter noise in the power- supply path, place a low-ESR decoupling capacitor of 0.1 uF between VS and GND pins as close as possible to the supply and ground pins of the device. To compensate for noisy or high-impedance power supplies, add more decoupling capacitance. The TMCS1101 power supply VS can be sequenced independently of current flowing through the input. However, there is a typical 25ms delay between VS reaching the recommended operating voltage and the analog output being valid. Within this delay VOUT transfers from a high impedance state to the active drive state, during which time the output voltage could transition between GND and VS. If this behavior must be avoided, a stable supply voltage to VS should be provided for longer than 25ms prior to applying input current.

12 Layout

12.1 Layout Guidelines

The TMCS1101 is specified for a continuous current handling capability on the TMCS1101EVM, which uses 3-oz copper pour planes. This current capability is fundamentally limited by the maximum device junction temperature and the thermal environment, primarily the PCB layout and design. To maximize current-handling capability and thermal stability of the device, take care with PCB layout and construction to optimize the thermal capability. Efforts to improve the thermal performance beyond the design and construction of the TMCS1101EVM can result in increased continuous-current capability due to higher heat transfer to the ambient environment. Keys to improving thermal performance of the PCB include:

Use large copper planes for both input current path and isolated power planes and signals.
Use heavier copper PCB construction.
Place thermal via farms around the isolated current input.
Provide airflow across the surface of the PCB. The TMCS1101 senses external magnetic fields, so make sure to minimize adjacent high-current traces in close proximity to the device. The input current trace can contribute additional magnetic field to the sensor if the input current traces are routed parallel to the vertical axis of the package. Figure 48 illustrates the most optimal input current routing into the TMCS1101. As the angle that the current approaches the device deviates from 0° to the horizontal axis, the current trace contributes some additional magnetic field to the sensor, increasing the effective sensitivity of the device. If current must be routed parallel to the package vertical axis, move the routing away from the package to minimize the impact to the sensitivity of the device. Terminate the input current path directly underneath the package lead footprint, and use a merged copper input trace for both the IN+ and IN– inputs.

12.2 Layout Example

the device input pins while large copper planes enhance thermal performance. Figure 50. Recommended Board Top (Left) and Bottom (Right) Plane Layout

13 Device and Documentation Support

13.1 Device Support

13.1.1 Development Support

For development tool support see the following:

TMCS1101EVM
TMCS1101 TI-TINA Model
TMCS1101 TINA-TI Reference Design

13.2 Documentation Support

13.2.1 Related Documentation

For related documentation see the following:

Texas Instruments, TMCS1101EVM users's guide
Texas Instruments, Enabling Precision Current Sensing Designs with Nonratiometric Magnetic Current Sensors
Texas Instruments, Low-Drift, Precision, In-Line Isolated Magnetic Motor Current Measurements
Texas Instruments, Isolation Glossary

13.3 Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document.

13.4 Support Resources

TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight from the experts. Search existing answers or ask your own question to get the quick design help you need. Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

13.5 Trademarks

E2E is a trademark of Texas Instruments. All other trademarks are the property of their respective owners.

13.6 Electrostatic Discharge Caution

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

13.7 Glossary

SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions.

14 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

www.ti.com 13-Jun-2020 Addendum-Page 1 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish (6) MSL Peak Temp (3) Op Temp (°C) Device Marking (4/5) Samples PMCS1101A1BQDR ACTIVE SOIC D 8 2500 TBD Call TI Call TI -40 to 125 PMCS1101A1UQDR ACTIVE SOIC D 8 2500 TBD Call TI Call TI -40 to 125 PMCS1101A2BQDR ACTIVE SOIC D 8 2500 TBD Call TI Call TI -40 to 125 PMCS1101A2UQDR ACTIVE SOIC D 8 2500 TBD Call TI Call TI -40 to 125 PMCS1101A3BQDR ACTIVE SOIC D 8 2500 TBD Call TI Call TI -40 to 125 PMCS1101A3UQDR ACTIVE SOIC D 8 2500 TBD Call TI Call TI -40 to 125 PMCS1101A4BQDR ACTIVE SOIC D 8 2500 TBD Call TI Call TI -40 to 125 PMCS1101A4UQDR ACTIVE SOIC D 8 2500 TBD Call TI Call TI -40 to 125 TMCS1101A1BQDR PREVIEW SOIC D 8 2500 Green (RoHS & no Sb/Br) SN Level-2-260C-1 YEAR -40 to 125 M01A1B TMCS1101A1BQDT PREVIEW SOIC D 8 250 Green (RoHS & no Sb/Br) SN Level-2-260C-1 YEAR -40 to 125 M01A1B TMCS1101A1UQDR PREVIEW SOIC D 8 2500 Green (RoHS & no Sb/Br) SN Level-2-260C-1 YEAR -40 to 125 M01A1U TMCS1101A1UQDT PREVIEW SOIC D 8 250 Green (RoHS & no Sb/Br) SN Level-2-260C-1 YEAR -40 to 125 M01A1U TMCS1101A2BQDR PREVIEW SOIC D 8 2500 Green (RoHS & no Sb/Br) SN Level-2-260C-1 YEAR -40 to 125 M01A2B TMCS1101A2BQDT PREVIEW SOIC D 8 250 Green (RoHS & no Sb/Br) SN Level-2-260C-1 YEAR -40 to 125 M01A2B TMCS1101A2UQDR PREVIEW SOIC D 8 2500 Green (RoHS & no Sb/Br) SN Level-2-260C-1 YEAR -40 to 125 M01A2U TMCS1101A2UQDT PREVIEW SOIC D 8 250 Green (RoHS & no Sb/Br) SN Level-2-260C-1 YEAR -40 to 125 M01A2U TMCS1101A3BQDR PREVIEW SOIC D 8 2500 Green (RoHS & no Sb/Br) SN Level-2-260C-1 YEAR -40 to 125 M01A3B TMCS1101A3BQDT PREVIEW SOIC D 8 250 Green (RoHS & no Sb/Br) SN Level-2-260C-1 YEAR -40 to 125 M01A3B

www.ti.com 13-Jun-2020 Addendum-Page 2 Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish (6) MSL Peak Temp (3) Op Temp (°C) Device Marking (4/5) Samples TMCS1101A3UQDR PREVIEW SOIC D 8 2500 Green (RoHS & no Sb/Br) SN Level-2-260C-1 YEAR -40 to 125 M01A3U TMCS1101A3UQDT PREVIEW SOIC D 8 250 Green (RoHS & no Sb/Br) SN Level-2-260C-1 YEAR -40 to 125 M01A3U TMCS1101A4BQDR ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) SN Level-2-260C-1 YEAR -40 to 125 M01A4B TMCS1101A4BQDT ACTIVE SOIC D 8 250 Green (RoHS & no Sb/Br) SN Level-2-260C-1 YEAR -40 to 125 M01A4B TMCS1101A4UQDR PREVIEW SOIC D 8 2500 Green (RoHS & no Sb/Br) SN Level-2-260C-1 YEAR -40 to 125 M01A4U TMCS1101A4UQDT PREVIEW SOIC D 8 250 Green (RoHS & no Sb/Br) SN Level-2-260C-1 YEAR -40 to 125 M01A4U (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based flame retardants must also meet the <=1000ppm threshold requirement. (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width.

www.ti.com 13-Jun-2020 Addendum-Page 3 Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Reel Diameter (mm) Reel Width W1 (mm) (mm) (mm) (mm) (mm) W (mm) Pin1 Quadrant PACKAGE MATERIALS INFORMATION www.ti.com 31-May-2020 Pack Materials-Page 1

*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TMCS1101A4BQDR SOIC D 8 2500 350.0 350.0 43.0 TMCS1101A4BQDT SOIC D 8 250 350.0 350.0 43.0 PACKAGE MATERIALS INFORMATION www.ti.com 31-May-2020 Pack Materials-Page 2

www.ti.com PACKAGE OUTLINE C .228-.244 TYP [5.80-6.19] .069 MAX [1.75] 6X .050 [1.27] 8X .012-.020 [0.31-0.51] .150 [3.81] .005-.010 TYP [0.13-0.25] 0 - 8 .004-.010 [0.11-0.25] .010 [0.25].016-.050 [0.41-1.27] 4X (0 -15 ) A .189-.197 [4.81-5.00] NOTE 3 B .150-.157 [3.81-3.98] NOTE 4 4X (0 -15 ) (.041) [1.04] SOIC - 1.75 mm max heightD0008A SMALL OUTLINE INTEGRATED CIRCUIT 4214825/C 02/2019 NOTES: 1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. 3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not exceed .006 [0.15] per side. 4. This dimension does not include interlead flash. 5. Reference JEDEC registration MS-012, variation AA. 1 8 .010 [0.25] C A B PIN 1 ID AREA SEATING PLANE .004 [0.1] C SEE DETAIL A DETAIL A TYPICAL SCALE 2.800

www.ti.com EXAMPLE BOARD LAYOUT .0028 MAX [0.07] ALL AROUND .0028 MIN [0.07] ALL AROUND (.213) [5.4] 6X (.050 ) [1.27] 8X (.061 ) [1.55] 8X (.024) [0.6] (R.002 ) TYP [0.05] SOIC - 1.75 mm max heightD0008A SMALL OUTLINE INTEGRATED CIRCUIT 4214825/C 02/2019 NOTES: (continued) 6. Publication IPC-7351 may have alternate designs. 7. Solder mask tolerances between and around signal pads can vary based on board fabrication site. METAL SOLDER MASK OPENING NON SOLDER MASK DEFINED SOLDER MASK DETAILS EXPOSED METAL OPENING SOLDER MASK METAL UNDER SOLDER MASK SOLDER MASK DEFINED EXPOSED METAL LAND PATTERN EXAMPLE EXPOSED METAL SHOWN SCALE:8X SYMM 4 5 SEE DETAILS SYMM

www.ti.com EXAMPLE STENCIL DESIGN 8X (.061 ) [1.55] 8X (.024) [0.6] 6X (.050 ) [1.27] (.213) [5.4] (R.002 ) TYP [0.05] SOIC - 1.75 mm max heightD0008A SMALL OUTLINE INTEGRATED CIRCUIT 4214825/C 02/2019 NOTES: (continued) 8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate design recommendations. 9. Board assembly site may have different recommendations for stencil design. SOLDER PASTE EXAMPLE BASED ON .005 INCH [0.125 MM] THICK STENCIL SCALE:8X SYMM SYMM 4 5

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Product Information

TMCS1101A2UQDR specifications and overview.

Summary

TMCS1101 1.5% Precision, Basic Isolation Hall-Effect Current Sensor With 짹600-V Working Voltage

Description

TMCS1101 1.5% Precision, Basic Isolation Hall-Effect Current Sensor With 짹600-V Working Voltage

Source title TMCS1101A2UQDR Datasheet(PDF) - Texas Instruments

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