TMBYV10-40 STMICROELECTRONICS | Alldatasheet
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® TMBYV 10-40 SMALL SIGNAL SCHOTTKY DIODES
DESCRIPTION
Metal to silicon rectifier diodes in glass case featur- ing very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high fre- quency circuits. August 1999 Ed: 1A MELF (Glass) Symbol Parameter Value Unit VRRM Repetitive Peak Reverse Voltage 40 V IF (AV) Average Forward Current Ti = 60 °C 1A IFSM Surge non Repetitive Forward CurrentTi = 25 °C tp = 10ms Sinusoïdal Pulse A Ti = 25 °C tp = 300µs Rectangular Pulse Tstg Tj Storage and Junction Temperature Range - 65 to 150 - 65 to 125 TL Maximum Lead Temperature for Soldering during 15s 260 °C ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol Parameter Value Unit R th (j - l)Junction-leads 110 °C/W * Pulse test: tp ≤ 300µs δ < 2% . THERMAL RESISTANCE
Synbol Test Conditions Min. Typ. Max. Unit IR * Tj = 25°C VR = VRRM 0.5 mA Tj = 100°C 10 VF*I F = 1A Tj = 25°C 0.55 V I F = 3A 0.85 * * Pulse test: tp ≤ 300µs δ < 2% .
ELECTRICAL CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit C Tj = 25°C V R = 0 220 pF DYNAMIC CHARACTERISTICS Forward current flow in a Schottky rectifier is due to majority carrier conduction. So reverse recovery is not affected by storage charge as in conventional PN junction diodes. Nevertheless, when the device switches from for- ward biased condition to reverse blocking state, current is required to charge the depletion capaci- tance of the diode. This current depends only of diode capacitance and external circuit impedance. Satisfactory circuit be- haviour analysis may be performed assuming that Schottky rectifier consists of an ideal diode in par- allel with a variable capacitance equal to the junc- tion capacitance (see fig. 5 page 4/4). Fig. 1 : Forward current versus forward voltage at low level (typical values). Fig. 2 : Forward current versus forward voltage at high level (typical values). TMBYV10-40
Fig. 3 : Reverse current versus junction temperature. Fig. 4 : Reverse current versus VRRM in per cent. Fig. 5 : Capacitance C versus reverse applied voltage VR (typical values) Fig. 6 : Surge non repetitive forward current for a rectangular pulse with t â 10 ms. TMBYV10-40
Fig. 7 : Surge non repetitive forward current versus number of cycles. Cooling method: by convection and conduction Marking: ring at cathode end. Weight: 0.139g ORDERING CODE : TMBYV10-40 FILM FOOT PRINT DIMENSIONS (Millimeter) PACKAGE MECHANICAL DATA MELF Glass BO/ A CC DO/ 6.5 REF. DIMENSIONS Millimeters Inches A 4.80 5.20 0.189 0.205 ∅ B 2.50 2.65 0.098 0.104 C 0.45 0.60 0.018 0.024 ∅ D 2.50 0.098 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com TMBYV10-40