TMBR6S05 SECOS | Alldatasheet
Document overview
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Technical content
0.5 Amp Silicon Bridge Rectifiers Elektronische Bauelemente
02-Nov-2012 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
/circle6 Ultra Low leakage current IR ＜2µA，TA=125 ° C /circle6 No solder used ，Real fully in line with lead free /circle6 Package Thickness is 1.2mm /circle6 High ESD >12KV （HBM MODEL ） /circle6 Plastic material has U/L flammability classification 94V-0 /circle6 High temperature soldering guaranteed: 260 °C/10s （Reflow ） 350 °C/3s （Manual welding ） MECHANICAL DATA /circle6 Small signal rectifier devices.
PACKAGE INFORMATION
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Rating 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, de-rate current by 20% .) Parameter Symbol Rating Unit Maximum Recurrent Reverse Voltage V RRM 600 V Maximum RMS Voltage VRMS 420 V Maximum DC Blocking Voltage VDC 600 V Maximum Average Forward Rectified Current @TA=25° C I F(AV) 0.5 A Max continuous Forward Rectified Current @TA=25° C I MAX. 2 A Peak Forward Surge Current, 8.3ms single half sine-wave superimposed on rated load (JEDEC method) IFSM 12 A Maximum DC Reverse Current at Rated DC Blocking Voltage T A=25° C IR 0.5 µA TA=125° C 2 Maximum Instantaneous Forward Voltage @ I F=0.25A V F 1 V Typical thermal resistance junction to lead R θJL 200 ° C/ W Operating & Storage Temperature Range T J,TSTG -55~150 ° C TMB REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 4.5 4.7 F 6.6 7.0 B 3.6 3.8 G 0.2 TYP. C 1.2 TYP. H 0.6 0.8 D 2.6 2.8 I 0.9 1.1 E 0.45 0.65 J 0.05 0.15
02-Nov-2012 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES