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GaAs FET Amplifier; Medium Gain: 13 dB Typ. High Output Power: >+27 dBm Typical Operating Temp. - 55 ºC to +85 ºC Environmental Screening Available CHARACTERISTIC TYPICAL MIN/MAX Ta= 25 ºC Ta = -55 ºC to +85 ºC Frequency 10 - 1000 MHz 10 - 1000 MHz Note: Care should always be taken to effectively ground the case of each unit. Noise Figure (dB) 4.0 8.0* Max. VSWR In 1.75:1 2.0:1 Max. Out 1.5:1 2.0:1 Max. Reverse Isolation (dB) -18 -17 Max. Power @ 1 dB Comp. (dBm) >+27 +26 Min. Gain (dB) 13 12.0 Min. Specifications Typical Performance Data Maximum (No Damage) Ratings * Noise Figure is > 8.0 dB below 30 MHZ Start 10 MHz Stop 1000 MHz Start 10 MHz Stop 1000 MHz Start 10 MHz Stop 1000 MHz Start 10 MHz Stop 1000 MHz Start 10 MHz Stop 1000 MHz Start 10 MHz Stop 1000 MHz - 10 - 20 - 30 - 40 2.0 1.5 1.0 2.0 1.5 1.0 +29 +30 +28 +27 +26 Gain (dB) Noise Figure (dB) 1 dB Comp. (dBm) Input VSWR Output VSWR Reverse Isolation (dB) Revision 1/9/2013 Spectrum Microwave · 2144 Franklin Drive N.E. · Palm Bay, Florida 32905 · PH (888) 553-7531 · Fax (888) 553-7532 Spectrum Microwave · 2707 Black Lake Place · Philadelphia, Pennsylvania 19154 · PH (215) 464-4000 · Fax (215) 464-4001www.SpectrumMicrowave.com