TM861

TM841M-L SANKEN | Alldatasheet

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n Absolute Maximum Ratings n Electrical Characteristics Parameter Symbol Ratings Unit Conditions V Conduction angle 360°, Tc=108°C 50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C 400 TM841M-L 600 TM861M-L A A V A W W VDRM IT(RMS) ITSM VGM IGM PGM PG(AV) Tj Tstg 8.0 0.5 –40 to +125 –40 to +125 V , G , G , G , G , G , G , G , G V mA V mA °C/W Parameter Symbol Ratings typmin max Unit Conditions mAIDRM VTM VGT IGT VGD IH Rth 0.7 0.8 0.9 0.8 2.0 1.8 0.2 1.6 2.0 2.0 0.1 0.3 2.0 V D=VDRM, RGK=¥ , Tj=125°C VD=VDRM, RGK=¥ , Tj=25°C Pulse test, ITM=10A VD=6V, RL=10Ω , TC=25°C VD=6V, RL=10Ω , TC=25°C Junction to case VD=6V VD=1/2·VDRM, Tj=125°C TM841M-L, TM861M-L TO-220 8A Triac n Features l Repetitive peak off-state voltage: VDRM=400, 600V l RMS on-state current: IT(RMS)=8A l Gate trigger Current: IGT=30mA max (MODE , , ) 1.7–0.2 3.0–0.2 8.8–0.2 f3.75–0.1 1.35–0.15 2.5–0.12.5–0.1 +0.2–0.10.65 10.4max 16.7max 5.0max 2.1max 12.0 min 4.0max Weight: Approx. 2.6g External Dimensions (Unit: mm) (1). Terminal 1 (T1) (2). Terminal 2 (T2) (3). Gate (G) (1) (2) (3) a. Part Number b. Lot Number a b (Tj=25°C, unless otherwise specified) Repetitive peak off-state voltage RMS on-state current Surge on-state current Peak gate voltage Peak gate current Peak gate power loss Average gate power loss Junction temperature Storage temperature Off-state current On-state voltage Gate trigger voltage Gate trigger current Gate non-trigger voltage Holding current Thermal resistance

0.5 0.3 100 1.0 2.0 3.6 3.0 100 1 5 10 50 100 50Hz 20 8040 60 P =5W GM –40 0 75 100 25 50 125 2468 1 0 0 100 150 125 24 1 0 68 50% 0.5 1 10 10 10 0.1 23 104 0.5 1 10 10 10 0.1 23 104 0.5 1 10 10 10 0.1 23 104 0.5 1 10 10 10 0.1 23 104 0.5 1 10 10 10 0.1 23 104 0.5 1 10 10 10 0.1 23 104 0.1 1 10 10 10 0.1 100 23 104 105–40 0 75 100 25 50 125 1.0 0.8 0.6 0.4 0.2 1.2 –40 0 75 100 25 50 125 100 150 125 TM841M-L, TM861M-L On-state voltage vT (V) On-state current iT (A) vT – iT Characteristics (max) Tj=25°C Tj=125°C Number of cycle Surge on-state current ITSM (A) ITSM Ratings 1cycle 10 ms ITSM Tj=125°C Initial junction temperature Gate current iGF (A) Gate voltage vGF (V) Gate Characteristics See graph at the upper right Gate trigger current IGT (mA) Gate trigger voltage VGT (V) Tj=–40 °C Tj=25°C Tj=–20 °C RMS on-state current IT(RMS) (A) IT(RMS) –PT(AV) Characteristics Average on-state power PT(AV) (W) Full-cycle sinewave Conduction angle:360 ° Full-cycle sinewave Conduction angle:360 ° RMS on-state current IT(RMS) (A) IT(RMS) –Tc Ratings Case temperature TC (°C) IT(RMS) –Ta Ratings RMS on-state current IT(RMS) (A) Ambient temperature Ta (°C) Full-cycle sinewave Conduction angle :360° Self-supporting Natural cooling No wind Junction temperature Tj (°C) Holding current IH (mA) IH temperature Characteristics (Typical) (VD=30V) (T2+–T1–) (T2––T1+) Pulse trigger temperature Characteristics igt (Typical) (MODE – ) (MODE– ) (MODE– ) (MODE – ) (MODE– ) (MODE– ) Pulse trigger temperature Characteristics vgt (Typical) Pulse width tw (ms) vgt VGT DC gate trigger voltage at 25°C( )( ) Gate trigger voltage at Tj and tw Pulse width tw (ms) vgt VGT DC gate trigger voltage at 25°C( )( ) Gate trigger voltage at Tj and tw Pulse width tw (ms) vgt VGT DC gate trigger voltage at 25°C( )( ) Gate trigger voltage at Tj and tw vgt tw Tj= –40°C –20°C 25°C 75°C 125°C 50% vgt tw Tj= –40°C –20°C 25°C 75°C 125°C 50% vgt tw Tj= –40°C –20°C 25°C 75°C 125°C Pulse width tw (ms) igt IGT DC gate trigger current at 25°C( )( ) Gate trigger current at Tj and tw Pulse width tw (ms) igt IGT DC gate trigger current at 25°C( )( ) Gate trigger current at Tj and tw Pulse width tw (ms) igt IGT DC gate trigger current at 25°C( )( ) Gate trigger current at Tj and tw igt 50% twTj= –40°C –20°C 25°C 75°C 125°C igt 50% twTj= –40°C –20°C 25°C 75°C 125°C igt 50% twTj= –40°C –20°C 25°C 75°C 125°C Junction temperature Tj (°C) Gate trigger voltage VGT (V) VGT temperature characteristics (Typical) MODE (T2+,G+) MODE (T2+,G– ) MODE (T2–,G–) (VD=6V, RL=10Ω ) IGT temperature characteristics (Typical) Junction temperature Tj (°C) Gate trigger current IGT (mA) (VD=6V, RL=10Ω ) MODE (T2+, G+) MODE (T2+, G– ) MODE (T2–, G–) t, Time (ms) Transient thermal resistance rth (°C/W) Transient thermal resistance Characteristics Junction to operating environment Junction to case