TM8050H-8D3 STMICROELECTRONICS | Alldatasheet

Document overview

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Technical content

Features

 High junction temperature: Tj = 150 °C  Blocking voltage: VDRM = VRRM = 800 V  Nominal current: IT(RMS) = 80 A  Gate triggering current: IGT max. = 50 mA  High noise immunity: dV/dt > 1 kV/µs  Surface mounted device D3PAK  Increase of thermal margin due to extended Tj up to 150 °C  Low ID and IR in blocking state  High compact power SMD design

Applications

 AC-DC rectifier controlled bridge  Motorbike voltage regulator  Variable speed motor drive  Battery charging system  AC solid state relay  By-pass switch of UPS  Industrial welding systems  Motor soft starter

Description

Available in high power package (D3PAK), the device is suitable in applications where power switching (IT(RMS) = 80 A at TC = 130 °C) and power dissipation (VTM = 1.55 V at 160 A) are critical, such as motorbike voltage regulator, by- pass AC switch, controlled rectifier bridge, solid state relay, battery charger, welding equipment and motor driver applications. The TM8050H-8D3 is available in surface mount D3PAK package. Table 1: Device summary Symbol Value IT(RMS) 80 A VDRM/VRRM 800 V IGT 50 mA Tj 150 °C A G K D3PAK A K G

Characteristics TM8050H-8D3

1 Characteristics

Table 2: Absolute ratings (limiting values) Symbol Parameter Value Unit IT(RMS) RMS on-state current (180 ° conduction angle) TC = 130 °C 80 A IT(AV) Average on-state current (180 ° conduction angle) 50 A ITSM Non repetitive surge peak on-state current tp = 8.3 ms Tj initial = 25 °C 731 A tp = 10 ms 670 I2t I2t value for fusing Tj = 25 °C 2245 A2s VRRM / VDRM Maximum repetitive symmetric blocking voltage 800 V dl/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns f = 50 Hz Tj = 25 °C 200 A/µs IGM Peak gate current tp = 20 µs Tj = 150 °C 8 A PG(AV) Average gate power dissipation Tj = 150 °C 1 W VRGM Maximum peak reverse gate voltage 5 V Tstg Storage junction temperature range -40 to +150 °C Tj Maximum operating junction temperature -40 to +150 °C TL Maximum lead temperature during 10 to 30 s duration 245 °C Table 3: Electrical characteristics (Tj = 25 °C unless otherwise specified) Symbol Test Conditions Value Unit IGT VD = 12 V, RL = 33 Ω Min. 2.5 mA Max. 50 VGT VD = 12 V, RL = 33 Ω Max. 1.5 V VGD VD = VDRM, RL = 3.3 kΩ Tj = 150 °C Min. 0.2 V IH IT = 500 mA, gate open Max. 100 mA IL IG = 1.2 x IGT Max. 125 mA tgt IT = 80 A , VD = VDRM, IG = 200 mA, dIG/dt = 0.2 A/µs Typ. 3 µs dV/dt VD = 67 % VDRM, gate open Tj = 150 °C Min. 1000 V/µs tq IT = 33 A, dIT/dt = 10 A/µs, VR = 75 V, VD = 400 V, dVD/dt = 20 V/µs, tP = 100 µs Tj = 150 °C Max. 150 µs VTM ITM = 160 A, tP = 380 µs Tj = 25 °C Max. 1.55 V VTO Threshold voltage Tj = 150 °C Max. 0.85 V RD Dynamic resistance Tj = 150 °C Max. 5.5 mΩ IDRM VD = VDRM = VR = VRRM = 800 V Tj = 25 °C Max. 20 µA IRRM Tj = 150 °C Max. 2.5 mA

TM8050H-8D3 Characteristics Table 4: Thermal parameters Symbol Parameter Value Unit Rth(j-c) Junction to case (DC, max.) D3PAK 0.25 °C/W Rth(j-a) Junction to ambient (DC, typ., Scu = 2.1 cm2) 40

Characteristics TM8050H-8D3

1.1 Characteristics (curves)

Figure 1: Maximum average power dissipation versus average on-state current Figure 2: Average and DC on-state current versus case temperature Figure 3: On-state characteristics (maximum values) Figure 4: Average and DC on-state current versus ambient temperature Figure 5: Relative variation of thermal impedance versus pulse duration Figure 6: Thermal resistance junction to ambient versus copper surface under tab (D3PAK printed circuit board FR4, copper thickness: 35 µm) 0 5 10 15 20 25 30 35 40 45 50 55 60 65 P(W) α = 30° α = 60° α = 90° α = 120° α = 180° D.C IT(AV)(A) 0 25 50 75 100 125 150 IT(AV)(A) D.Cα = 180° α = 30° α = 60° α = 90° α = 120° TC(°C) 100 1000 Tj max : VTO = 0.85 V Rd = 5.5m Ω Tj = 25 °C Tj = 150 °C ITM(A) VTM (V) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 25 50 75 100 125 150 IT(AV)(A) D.C α = 180° TA(°C) 1.0E-02 1.0E-01 1.0E+00 tp(s) K = [Zth/Rth] Zth(j-c) Zth(j-a) 0 5 10 15 20 25 30 35 40 SCu(cm²) D3PAK Rth(j-a)(°C/W)

2 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.  Epoxy meets UL 94,V0  Lead-free package leads, halogen-free molding resin  Pre-conditioning moisture sensitivity MSL 1

2.1 D³PAK package information

Figure 13: D³PAK package dimension definitions Gauge plane LL3 0~8° A E D e e b H c

Table 5: D³PAK package mechanical data Ref. Dimensions Millimeters Inches(1) A 4.90 5.10 0.1929 0.2008 A1 2.70 2.90 0.1063 0.1142 A2 0.02 0.25 0.0008 0.0098 b 1.15 1.45 0.0453 0.0571 c 0.40 0.65 0.0157 0.0256 c2 1.45 1.61 0.0571 0.0634 D 13.80 14.00 0.5433 0.5512 D1 11.80 12.10 0.4646 0.4764 D2 7.50 7.80 0.2953 0.3071 D3 2.90 3.20 0.1142 0.1260 E 15.85 16.05 0.6240 0.6319 E1 13.30 13.60 0.5236 0.5354 e 5.45 0.2146 H 18.70 19.10 0.7362 0.7520 L 1.70 2.00 0.0669 0.0789 L2 1.00 1.15 0.0394 0.0453 L3 0.25 0.0098 L4 3.80 4.10 0.1496 0.1614 Notes: (1)Dimension in inches are given for reference only. Figure 14: Minimum footprint (dimensions in mm) 1.9 10.9 16.1 3.7 20.1

3 Ordering information

Figure 15: Ordering information scheme Table 6: Ordering information Order code Marking Package Weight Base qty. Delivery mode TM8050H-8D3-TR TM8050H8 D3PAK 4.2 g 400 Tape and reel

4 Revision history

Table 7: Document revision history Date Revision Changes 11-Feb-2016 1 Initial release. 01-Apr-2016 2 Updated Table 3: "Electrical characteristics (Tj = 25 °C unless otherwise specified)". 29-Apr-2016 3 Updated Table 4: "Thermal parameters". TM 80 50 H - 8 D3 - TR Series Thyristor RMS current 80 = 80 A IGT current 50 = 50 mA Maximum junction temperature H = 150 °C Voltage 8 = 800 V Package D3 = D3PAK Tape and reel