TM541M-L SANKEN | Alldatasheet

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n Absolute Maximum Ratings n Electrical Characteristics Parameter Symbol Ratings Unit Conditions V Conduction angle 360°, Tc=111°C 50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C 400 TM541M-L 600 TM561M-L A A V A W W VDRM IT(RMS) ITSM VGM IGM PGM PG(AV) Tj Tstg 5.0 0.5 –40 to +125 –40 to +125 V , G , G , G , G , G , G , G , G V mA V mA °C/W Parameter Symbol Ratings typmin max Unit Conditions mAIDRM VTM VGT IGT VGD IH Rth 0.7 0.8 0.8 0.7 2.0 2.7 0.2 1.6 2.0 2.0 0.1 0.3 2.0 V D=VDRM, RGK=¥ , Tj=125°C VD=VDRM, RGK=¥ , Tj=25°C Pulse test, ITM=7A VD=6V, RL=10Ω , TC=25°C VD=6V, RL=10Ω , TC=25°C Junction to case VD=6V VD=1/2·VDRM, Tj=125°C n Features l Repetitive peak off-state voltage: VDRM=400, 600V l RMS on-state current: IT(RMS)=5A l Gate trigger Current: IGT=20mA max (MODE , , ) TM541M-L, TM561M-L TO-220 5A Triac 1.7–0.2 3.0–0.2 8.8–0.2 f3.75–0.1 1.35–0.15 2.5–0.12.5–0.1 +0.2–0.10.65 10.4max 16.7max 5.0max 2.1max 12.0 min 4.0max Weight: Approx. 2.6g External Dimensions (Unit: mm) (1). Terminal 1 (T1) (2). Terminal 2 (T2) (3). Gate (G) (1) (2) (3) a. Part Number b. Lot Number a b Repetitive peak off-state voltage RMS on-state current Surge on-state current Peak gate voltage Peak gate current Peak gate power loss Average gate power loss Junction temperature Storage temperature Off-state current On-state voltage Gate trigger voltage Gate trigger current Gate non-trigger voltage Holding current Thermal resistance (Tj=25°C, unless otherwise specified)

Gate current iGF (A) Gate voltage vGF (V) Gate Characteristics 01230.5 100 1.0 2.0 4.0 3.0 On-state voltage vT (V) On-state current iT (A) vT – iT Characteristics (max) 100 Number of cycle Surge on-state current ITSM (A) ITSM Ratings 1 5 10 50 100 50Hz 20 40 P =5W GMf 50Hz duty 10% 1234 6 5 RMS on-state current IT(RMS) (A) IT(RMS) –PT(AV) Characteristics 100 150 125 123 4 6 5 RMS on-state current IT(RMS) (A) IT(RMS) –Tc Ratings –40 0 75 50 10025 125 Junction temperature Tj (°C) Holding current IH (mA) 0.5 1 10 10 10 0.5 1.0 1.5 2.0 23 0.5 1 10 10 10 0.5 1.0 1.5 2.0 23 0.5 1 10 10 10 0.5 1.0 1.5 2.0 0.5 1 10 10 10 0.2 0.5 23 0.5 1 10 10 10 0.2 0.5 23 0.5 1 10 10 10 0.2 0.5 0.1 1 10 10 10 0.1 100 23 104 105– 40 0 75 100 25 50 125 1.0 0.8 0.6 0.4 0.2 1.2 –40 0 50 75 100 25 125 100 Case temperature TC (°C) Average on-state power PT(AV) (W) 100 150 125 IT(RMS) –Ta Ratings RMS on-state current IT(RMS) (A) Ambient temperature Ta (°C) TM541M-L, TM561M-L Tj=25°C Tj=125°C 1cycle 10 ms ITSM Tj=125°C Initial junction temperature See graph at the upper right Gate trigger current IGT (mA) Gate trigger voltage VGT (V) Tj=–40 °C Tj=25°C Tj=–20 °C Full-cycle sinewave Conduction angle:360 ° Full-cycle sinewave Conduction angle:360 ° Full-cycle sinewave Conduction angle :360° Self-supporting Natural cooling No wind IH temperature Characteristics (Typical) (VD=30V, RGK=¥ ) (T2+–T1–) (T2––T1+) Pulse trigger temperature Characteristics igt (Typical) (MODE – ) (MODE– ) (MODE– ) (MODE – ) (MODE– ) (MODE– ) Pulse trigger temperature Characteristics vgt (Typical) vgt tw vgt tw vgt tw Pulse width tw (ms) Pulse width tw (ms) vgt VGT DC gate trigger voltage at 25°C( )( ) Gate trigger voltage at Tj and tw vgt VGT DC gate trigger voltage at 25°C ( )( ) Gate trigger voltage at Tj and tw Pulse width tw (ms) vgt VGT DC gate trigger voltage at 25°C( )( ) Gate trigger voltage at Tj and tw 0°C 25°C 50°C 75°C 100°C 125°C Tj= –40°C –20°C 0°C 25°C 50°C 75°C 100°C 125°C Tj= –40°C –20°C 0°C 25°C 50°C 75°C 100°C 125°C Tj= –40°C –20°C Pulse width tw (ms) igt IGT DC gate trigger current at 25°C( )( ) Gate trigger current at Tj and tw Pulse width tw (ms) igt IGT DC gate trigger current at 25°C( )( ) Gate trigger current at Tj and tw Pulse width tw (ms) igt IGT DC gate trigger current at 25°C( )( ) Gate trigger current at Tj and tw tw igt tw igt 0°C 25°C 50°C 75°C 100°C 125°C Tj= –40°C –20°C 0°C 25°C 50°C 75°C 100°C 125°C Tj= –40°C –20°C tw igt 0°C 25°C 50°C 75°C 100°C 125°C Tj= –40°C –20°C Junction temperature Tj (°C) Gate trigger voltage VGT (V) VGT temperature characteristics (Typical) MODE (T2+,G+) MODE (T2+,G– ) MODE (T2–,G–) (VD=6V, RL=10Ω ) IGT temperature characteristics (Typical) Junction temperature Tj (°C) Gate trigger current IGT (mA) (VD=6V, RL=10Ω ) MODE (T2+, G+) MODE (T2+, G– ) MODE (T2–, G–) t, Time (ms) Transient thermal resistance rth (°C/W) Transient thermal resistance Characteristics (Junction to case)