TM2541B-L SANKEN | Alldatasheet

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n Absolute Maximum Ratings n Electrical Characteristics Parameter Symbol Ratings Unit Conditions V Conduction angle 360°, Tc=84°C RGK=¥ , Tj=–40 °C to +125°C 50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C f 50Hz, duty 10% f 50Hz, duty 10% f 50Hz, duty 10% 50Hz Sine wave, RMS, Terminal to Case, 1 min. 400 TM2541B-L 600 TM2561B-L A A V A W W VDRM IT(RMS) ITSM VGM IGM PGM PG(AV) Tj Tstg 240 0.5 –40 to +125 –40 to +125 VrmsVISO 2000 V , G , G , G , G , G , G , G , G V mA V mA °C/W Parameter Symbol Ratings typmin max Unit Conditions mAIDRM VTM VGT IGT VGD IH Rth 0.8 0.8 1.0 0.8 0.3 2.0 1.5 0.2 1.3 2.0 2.0 0.1 2.0 V D=VDRM, RGK=¥ , Tj=125°C VD=VDRM, RGK=¥ , Tj=25°C ITM=20A, TC=25°C VD=6V, RL=10Ω , TC=25°C VD=6V, RL=10Ω , TC=25°C Junction to case Tj=25°C V/µs(dv/dt)c V D=400V, Tj=125°C VD=1/2·VDRM, Tj=125°C TM2541B-L, TM2561B-L TO-3PF 25A Triac n Features l Repetitive peak off-state voltage: VDRM=400, 600V l RMS on-state current: IT(RMS)=25A l Gate trigger current: IGT=30mA max (MODE , , ) l Isolation voltage: VISO=2000V(AC, 1min.) l UL approved type available 15.6–0.2 5.45–0.1 3.35–0.2 3.45–0.2 5.5–0.2 3.2–0.2 23–0.3 3.3 1.6 5.5–0.2 9.5–0.2 2.15 (16.2) 5.45–0.1 1.5 4.4 1.5 –0.1 +0.2 1.05–0.1 +0.2 0.65–0.1 +0.2 1.75–0.1 +0.2 External Dimensions (Unit: mm) Weight: Approx. 6.5g(1) (2) (3) (1). Terminal 1 (T1) (2). Terminal 2 (T2) (3). Gate (G) a. Part Number b. Lot Number a b Repetitive peak off-state voltage RMS on-state current Surge on-state current Peak gate voltage Peak gate current Peak gate power loss Average gate power loss Junction temperature Storage temperature Isolation voltage Off-state current On-state voltage Gate trigger voltage Gate trigger current Gate non-trigger voltage Holding current Rate-of-rise of off-state commutation voltage Thermal resistance

0.8 100 On-state voltage vT (V) On-state current iT (A) vT – iT Characteristics (max) Tj=125°C Tj=25 °C 280 240 200 160 120 1 5 10 50 100 Number of cycle Surge on-state current ITSM (A) ITSM Ratings 01 2 1 6 2 048 2 6 24 RMS on-state current IT(RMS) (A) Average on-state power PT(AV) (W) IT(RMS) –PT(AV) Characteristics 150 100 125 4 8 16 26 20 2412 RMS on-state current IT(RMS) (A) Case temperature TC (°C) IT(RMS) –Tc Ratings 0.1 100 1 10 100 1000 10000 Gate current iGF (mA) Gate voltage vGF (V) Gate Characteristics 0.4 0.2 0.6 0.8 1.0 1.2 0–40 75 100 125 5025 Mode (VD=6V RL=10Ω ) 0.1 0.5 102 103 104 105101 100 0–40 75 100 125 5025 (VD=6V RL=10Ω ) Mode VGM =10V IGM =2A PG(AV)=0.5W PGM =0.5W VGD=0.2V –40°C VGT=2.3V –40°C IGT=75mA 25°C VGT=2V 25°C IGT=30mA TM2541B-L, TM2561B-L 1cycle 10 ms ITSM Tj=125°C Initial junction temperature Full-cycle sinewave Conduction angle:360 ° Full-cycle sinewave Conduction angle:360 ° Junction temperature Tj (°C) Gate trigger voltage VGT (V) VGT temperature characteristics (Typical) Junction temperature Tj (°C) Gate trigger current IGT (mA) IGT temperature characteristics (Typical) t, Time (ms) Transient thermal resistance rth (j-c) (°C/W) rth(j-c) –t Characteristics