TM1641B-L SANKEN | Alldatasheet

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15.6–0.2 5.45–0.1 3.35–0.2 3.45–0.2 5.5–0.2 3.2–0.2 23–0.3 3.3 1.6 5.5–0.2 9.5–0.2 2.15 (16.2) 5.45–0.1 1.5 4.4 1.5 –0.1 +0.2 1.05–0.1 +0.2 0.65–0.1 +0.2 1.75–0.1 +0.2 n Absolute Maximum Ratings n Electrical Characteristics Parameter Symbol Ratings Unit Conditions V Conduction angle 360°, Tc=92.5°C 50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C f 50Hz, duty 10% f 50Hz, duty 10% f 50Hz, duty 10% 50Hz Sine wave, RMS, Terminal to Case, 1 min. 400 TM1641B-L 600 TM1661B-L A A V A W W VDRM IT(RMS) ITSM VGM IGM PGM PG(AV) Tj Tstg 160 0.5 –40 to +125 –40 to +125 VrmsVISO 2000 V , G , G , G , G , G , G , G , G V mA V mA °C/W Parameter Symbol Ratings typmin max Unit Conditions mAIDRM VTM VGT IGT VGD IH Rth 0.7 0.8 1.0 0.8 0.1 1.5 1.8 0.2 1.6 1.5 1.5 0.1 2.0 V D=VDRM, RGK=¥ , Tj=125°C VD=VDRM, RGK=¥ , Tj=25°C ITM=20A, TC=25°C VD=6V, RL=10Ω , TC=25°C VD=6V, RL=10Ω , TC=25°C Junction to case Tj=25°C V/µs(dv/dt)c V D=400V, Tj=125°C VD=1/2·VDRM, Tj=125°C TM1641B-L, TM1661B-L TO-3PF 16A Triac n Features l Repetitive peak off-state voltage: VDRM=400, 600V l RMS on-state current: IT(RMS)=16A l Gate trigger current: IGT=30mA max (MODE , , ) l Rate-of-rise of off-state commutation voltage: (dv/dt)c=10V/µs min. l Isolation voltage: VISO=2000V(AC, 1min.) l UL approved type available External Dimensions (Unit: mm) Weight: Approx. 6.5g(1) (2) (3) (1). Terminal 1 (T1) (2). Terminal 2 (T2) (3). Gate (G) a. Part Number b. Lot Number a b Repetitive peak off-state voltage RMS on-state current Surge on-state current Peak gate voltage Peak gate current Peak gate power loss Average gate power loss Junction temperature Storage temperature Isolation voltage Off-state current On-state voltage Gate trigger voltage Gate trigger current Gate non-trigger voltage Holding current Rate-of-rise of off-state commutation voltage Thermal resistance

0.4 0.1 100 On-state voltage vT (V) On-state current iT (A) vT – iT Characteristics (max) 1 5 10 50 100 120 100 140 160 180 Number of cycle Surge on-state current ITSM (A) ITSM Ratings 048 1 2 1 6 RMS on-state current IT(RMS) (A) Average on-state power PT(AV) (W) IT(RMS) –PT(AV) Characteristics 048 1 2 1 6 2 0 100 150 125 RMS on-state current IT(RMS) (A) Case temperature TC (°C) IT(RMS) –Tc Ratings 0–40 –25 25 50 75 100 125 0.8 1.2 0.4 1.6 2.0 (VD=6V RL=10Ω ) Junction temperature Tj (°C) Gate trigger voltage VGT (V) 101 100 1000 5000 Gate current iGF (mA) Gate voltage vGF (V) Gate Characteristics Tj=125°C Tj=25 °C VGM =10V IGM =2A PG(AV)=0.5W PGM =5W VGD=0.2V –40°C VGT=1.8V –40°C IGT=75mA 25°C VGT=1.5V 25°C IGT=30mA Mode 0–40 –25–40 –25–40 –25 25 50 75 100 125 100 1000 Junction temperature Tj (°C) Latching current IL (mA) 0 25 50 75 100 125 100 1000 (RG-K=1kΩ ) Junction temperature Tj (°C) Holding current IH (mA) 0 25 50 75 100 125 100 (VD=6V RL=10Ω ) Junction temperature Tj (°C) Gate trigger current IGT (mA) 105104103102101 0.5 t, Time (ms) Transient thermal resistance rth (j-c) (°C/W) rth(j-c) –t Characteristics ModeMode (RG-K=¥ ) TM1641B-L, TM1661B-L 1cycle 10 ms ITSM Tj=125°C Initial junction temperature Full-cycle sinewave Conduction angle:360 ° Full-cycle sinewave Conduction angle:360 ° VGT temperature characteristics (Typical) IGT temperature characteristics (Typical) IH temperature characteristics (Typical) IL temperature characteristics (Typical)