TM1102

PZTM1102 PHILIPS | Alldatasheet

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Technical content

Product specification File under Discrete Semiconductors, SC01

1996 May 09

PNP transistor/Schottky-diode module handbook, halfpage M3D087

1996 May 09 2

Philips Semiconductors Product specification PNP transistor/Schottky-diode module PZTM1102

FEATURES

• Low output capacitance
• Fast switching time
• Integrated Schottky protection diode.

APPLICATIONS

• High-speed switching for industrial applications.

DESCRIPTION

Combination of a PNP transistor and a Schottky barrier diode in a plastic SOT223 package. NPN complement: PZTM1101. PINNING PIN DESCRIPTION 1 cathode Schottky 2 base 3 emitter 4 collector, anode Schottky Fig.1 Simplified outline (SOT223) and symbol. Marking code:TM1102. handbook, halfpage 4 32 3 MAM237Top view LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Notes 1. An additional copper area of >20 mm2 is required for pin 1, if power dissipation in the Schottky die is >0.5 W. 2. It is not allowed to dissipate the total power of 1.2 W in the Schottky die only. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT PNP transistor VCBO collector-base voltage open emitter − − 40 V VCES collector-emitter voltage V BE = 0 − − 40 V VEBO emitter-base voltage open collector − − 6 V IC collector current (DC) − − 200 mA Schottky barrier diode VR continuous reverse voltage − 40 V IF forward current (DC) − 1 A IF(AV) average forward current − 1 A P power dissipation up to T amb = 25°C; note 1 − 0.5 W Tj junction temperature reverse current applied − 125 °C forward current applied − 150 °C Combined device Ptot total power dissipation up to T amb = 25°C; note 2 − 1.2 W Tamb operating ambient temperature −55 +150 °C Tstg storage temperature −55 +150 °C Tj junction temperature − 150 °C

1996 May 09 3

Philips Semiconductors Product specification PNP transistor/Schottky-diode module PZTM1102

ELECTRICAL CHARACTERISTICS

Tamb = 25°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT NPN transistor V(BR)CBO collector-base breakdown voltage open emitter; IC = −10 µA; IE = 0; Tamb = −55 to +150°C; note 1 −40 − V V(BR)CES collector-emitter breakdown voltage open base; IC = −1 mA; VBE = 0; Tamb = −55 to +150°C; note 1 −40 − V V(BR)EBO emitter-base breakdown voltage open collector; IE = −10 µA; IC = 0; Tamb = −55 to +150°C; note 1 −6 − V ICES collector-emitter cut-off current VCE = −20 V; VBE = 0 − 100 nA VCE = −20 V; VBE = 0; Tamb = −55 to +150°C − 50 µA IEBO emitter-base cut-off current VEB = −6 V; IC = 0 − 50 nA VEB = −6 V; IC = 0; Tamb = −55 to +150°C − 10 µA VCEsat collector-emitter saturation voltage note 1 IC = −10 mA; IB = −1 mA − − 200 mV IC = −50 mA; IB = −3.2 mA − − 300 mV VCEsat collector-emitter saturation voltage Tamb = −55 to +150°C; note 1 IC = −10 mA; IB = −1 mA − − 250 mV IC = −50 mA; IB = −3.2 mA − − 350 mV VBEsat base-emitter saturation voltage note 1 IC = −10 mA; IB = −1 mA − − 850 mV IC = −50 mA; IB = −5 mA − − 950 mV VBEsat base-emitter saturation voltage Tamb = −55 to +150°C; note 1 IC = −10 mA; IB = −1 mA − − 1.0 V IC = −50 mA; IB = −5 mA − − 1.1 V C ob output capacitance I E = ie = 0; VCB = −5 V; f = 1 MHz − 4.5 pF C ib input capacitance I C = ic = 0; VEB = −0.5 V; f = 1 MHz − 10 pF fT transition frequency I C = −10 mA; VCE = −20 V; f = 100 MHz 250 − MHz hFE DC current gain V CE = −1 V; note 1 IC = −0.1 mA 40 − IC = −1 mA 70 − IC = −10 mA 100 300 IC = −100 mA 30 − hFE DC current gain V CE = −1 V; Tamb = −55 to +150°C; note 1 IC = −10 mA 60 500 IC = −100 mA 15 − SWITCHING TIMES (see Figs 2 and 3) td delay time V CC = 5 V 3 7 ns tr rise time I C = 50 mA 13 23 ns ts storage time V i= 0 to 5 V 200 380 ns tf fall time 50 80 ns

1996 May 09 4

Philips Semiconductors Product specification PNP transistor/Schottky-diode module PZTM1102 Notes 1. Measured under pulsed conditions: tp ≤ 300 µs;δ ≤0.01. 2. Limiting value for Tj= 125°C; Tj= 150°C with reverse current applied is not allowed as this may cause thermal runaway leading to thermal destruction of the diode. A peak junction temperature ofTj= 150°C is only allowed with forward voltage applied. THERMAL CHARACTERISTICS Note 1. Refer to SOT223 standard mounting conditions. Schottky barrier diode VF forward voltage I F = 100 mA; note 1 − 330 mV IF = 100 mA; Tamb = −55 to +150°C; note 1 − 400 mV IF = 1 A; note 1 − 500 mV IF = 1 A; Tamb = −55 to +150°C; note 1 − 560 mV IR reverse current V R = 40 V; note 1 − 300 µA VR = 40 V; Tj= 125°C; Tamb = −55 to +150°C; note 1 − 35(2) mA IR reverse current V R = 10 V; note 1 − 40 µA VR = 10 V; Tj= 125°C; Tamb = −55 to +150°C; note 1 − 15(2) mA C j junction capacitance V R = 0 V; f = 1 MHz − 250 pF SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-a thermal resistance from junction to ambient (for the transistor) note 1 100 K/W R th j-a thermal resistance from junction to ambient (for the Schottky diode)note 1 250 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

1996 May 09 5

Philips Semiconductors Product specification PNP transistor/Schottky-diode module PZTM1102 GRAPHICAL DATA Fig.2 Switching times test circuit. MBH222 handbook, halfpage DUT Vo (pin 4) Vi 5 V 0 V VCC = 5 V DC 90 Ω (1%) 5.23 Ω (1%) 7.5 kΩ (5%) 825 Ω (1%) Fig.3 Input and output waveforms. tr < 5 ns (10% to 90%); tp = 1µs;δ = 0.02; Zi= 50Ω . ton = td + tr; toff= ts + tf. handbook, halfpage MBH223 INPUT OUTPUT Vi Vo 5 V 0 V ton tr ts toff tp td tf 90% 90% 10% 10%

1996 May 09 6

Philips Semiconductors Product specification PNP transistor/Schottky-diode module PZTM1102 PACKAGE OUTLINE Dimensions in mm. Fig.4 SOT223. handbook, full pagewidth 6.7 6.3 0.95 0.85 2.3 0.80 0.60 4.6 3.1 2.9 3.7 3.3 7.3 6.7 A B 0.2 A 1.80 max 1616o max 10o max 0.10 0.01 0.32 0.24 1 2 3 MSA035 - 1(4x) 0.1 BM M S seating plane 0.1 S o

1996 May 09 7

Philips Semiconductors Product specification PNP transistor/Schottky-diode module PZTM1102 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.