TLYE17T

TLOE17T TOSHIBA | Alldatasheet

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TLRE17T,TLRME17T,TLSE17T,TLOE17T,TLYE17T 2002-09-25 1 TOSHIBA LED Lamp TLRE17T,TLRME17T,TLSE17T TLOE17T,TLYE17T Panel Circuit Indicator /Gb7/G205mm package /Gb7/G20InGaAℓP technology /Gb7/G20All plastic mold type /Gb7/G20Transparent lens /Gb7/G20High intensity light emission /Gb7/G20Excellent low current light output /Gb7/G20Applications: Outdoor message signboards, safety equipment Line/G2d/G2d/G2d/G2dUp Product Name Color Material TLRE17T Red InGaA ℓP TLRME17T Red InGaA ℓP TLSE17T Red InGaA ℓP TLOE17T Orange InGaA ℓP TLYE17T Yellow InGaA ℓP Maximum Ratings (Ta = 25°C) Product Name Forward Current IF (mA) Reverse Voltage VR (V) Power Dissipation PD (mW) Operating Temperature Topr (°C) Storage Temperature Tstg (°C) TLRE17T 50 4 120 TLRME17T 50 4 120 TLSE17T 50 4 120 TLOE17T 50 4 120 TLYE17T 50 4 120 /G2d40~100 /G2d40~120 Unit in mm JEDEC ― EIAJ ― TOSHIBA Weight: 0.31 g (typ.)

TLRE17T,TLRME17T,TLSE17T,TLOE17T,TLYE17T 2002-09-25 2 Electrical And Optical Characteristics (Ta = 25°C) Typ. Emission Wavelength Luminous Intensity IV Forward Voltage VF Reverse Current IR Product Name λd λp ∆λ I F Min Typ. I F Typ. Max I F Max V R TLRE17T 630 (644) 20 20 476 1500 20 1.9 2.4 20 50 4 TLRME17T 626 (636) 23 20 850 2400 20 1.9 2.4 20 50 4 TLSE17T 613 (623) 20 20 850 3000 20 1.9 2.4 20 50 4 TLOE17T 605 (612) 20 20 1530 4500 20 2.0 2.4 20 50 4 TLYE17T 587 (590) 17 20 850 3000 20 2.0 2.4 20 50 4 Unit nm mA mcd mA V mA µA V Precautions Please be careful of the following: /Gb7/G20Soldering temperature: 260°C max, soldering time: 3s max (Soldering portion of lead: Below the lead stopper) /Gb7/G20If the lead is formed, the lead should be formed up to 5 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. /Gb7/G20This visible LED lamp also emits some IR light. If a photodetector is located near the lED lamp, please ensure that it will not be affected by this IR light.

TLRE17T,TLRME17T,TLSE17T,TLOE17T,TLYE17T 2002-09-25 3 TLRE17T IV – IF Forward current I F (mA) IF – VF Forward voltage V F (V) 100 1.7 Ta=25℃ 1.6 Luminous intensity I V (mcd) Forward current I F (mA) 1 10 100 10000 100 1000 Ta=25℃ Relative luminous intensity I V IV – Tc Case temperature Tc ( ℃) 0.1 0.3 0.5 80 /G2d20 0 20 40 60 Relative Luminous Intensity – Wavelength Wavelength λ ( n m ) Relative luminous intensity 1.0 0.2 0.4 0.6 0.8 580 600 620 640 660 700 680 IF = 20mA Ta= 25℃ Allowable forward current IF ( m A ) IF – Ta Ambient temperature Ta ( ℃) 0 100 40 60 80 120 20 Ta = 25℃ Radiation Pattern 90° 80° 90° 0 0.2 0.4 0.6 0.8 0° 10° 20° 30° 40° 50° 60° 70° 80° 10° 20° 30° 40° 50° 60° 70° 1.0

TLRE17T,TLRME17T,TLSE17T,TLOE17T,TLYE17T 2002-09-25 4 TLRME17T Relative luminous intensity I V IV – Tc Case temperature Tc ( ℃) 0.1 0.3 0.5 80 /G2d20 0 20 40 60 Allowable forward current IF ( m A ) IF – Ta Ambient temperature Ta ( ℃) 0 100 40 60 80 120 20 IF – VF Forward current I F (mA) Forward voltage V F (V) 100 Ta=25℃ IV – IF Forward current I F (mA) Luminous intensity I V (mcd) 1 10 100 10000 100 1000 Ta=25℃ Relative Luminous Intensity – Wavelength Wavelength λ ( n m ) RELATIVE LUMINOUS INTENSITY 1.0 0.2 0.4 0.6 0.8 580 600 620 640 660 700 IF = 20mA Ta= 25℃ 680 Ta = 25℃ Radiation Pattern 90° 80° 90° 0 0.2 0.4 0.6 0.8 0° 10° 20° 30° 40° 50° 60° 70° 80° 10° 20° 30° 40° 50° 60° 70° 1.0

TLRE17T,TLRME17T,TLSE17T,TLOE17T,TLYE17T 2002-09-25 5 TLSE17T IF – Ta 0 100 20 40 60 80 120 Allowable forward current IF ( m A ) Ambient temperature Ta ( ℃) Case temperature Tc ( ℃) Relative luminous intensity I V IV – Tc 0.1 0.3 0.5 80 /G2d20 0 20 40 60 IF – VF Forward current I F (mA) Forward voltage V F (V) 100 Ta=25℃ Relative Luminous Intensity – Wavelength Wavelength λ ( n m ) Relative luminous intensity 1.0 0.2 0.4 0.6 0.8 560 580 600 620 640 680 660 IF = 20mA Ta= 25℃ IV – IF Luminous intensity I V (mcd) Forward current I F (mA) 1 10 100 10000 100 1000 Ta=25℃ Ta = 25℃ Radiation Pattern 90° 80° 90° 0 0.2 0.4 0.6 0.8 0° 10° 20° 30° 40° 50° 60° 70° 80° 10° 20° 30° 40° 50° 60° 70° 1.0

TLRE17T,TLRME17T,TLSE17T,TLOE17T,TLYE17T 2002-09-25 6 TLOE17T IF – Ta Allowable forward current I F ( m A ) Ambient temperature Ta ( ℃) 0 100 20 40 60 80 120 Case temperature Tc ( ℃) Relative luminous intensity I V IV – Tc 0.1 0.3 0.5 80 /G2d20 0 20 40 60 IF – VF Forward voltage V F (V) Forward current I F (mA) 100 Ta=25℃ IV – IF Forward current I F (mA) Luminous intensity I V (mcd) 1 10 10030 10000 100 1000 Ta=25℃ Wavelength λ ( n m ) Relative Luminous Intensity – Wavelength Relative luminous intensity 1.0 0.2 0.4 0.6 0.8 540 560 580 600 620 660IF = 20mA Ta= 25℃ 640 Ta = 25℃ Radiation Pattern 90° 80° 90° 0 0.2 0.4 0.6 0.8 0° 10° 20° 30° 40° 50° 60° 70° 80° 10° 20° 30° 40° 50° 60° 70° 1.0

TLRE17T,TLRME17T,TLSE17T,TLOE17T,TLYE17T 2002-09-25 7 TLYE17T IV – Tc Case temperature Tc ( ℃) Relative luminous intensity I V /G2d20 0 20 40 60 0.1 0.3 0.5 Ambient temperature Ta ( ℃) Allowable forward current I F ( m A ) IF – Ta 0 100 40 60 80 120 20 Relative Luminous Intensity – Wavelength Wavelength λ ( n m ) Relative luminous intensity 1.0 0.2 0.4 0.6 0.8 540 540 580 600 620 660 IF = 20mA Ta= 25℃ 640 IV – IF Luminous intensity I V (mcd) Forward current I F (mA) 1 10 100 10000 100 1000 Ta=25℃ IF – VF Forward voltage V F (V) Forward current I F (mA) 100 Ta=25℃ Ta = 25℃ Radiation Pattern 90° 80° 90° 0 0.2 0.4 0.6 0.8 0° 10° 20° 30° 40° 50° 60° 70° 80° 10° 20° 30° 40° 50° 60° 70° 1.0

TLRE17T,TLRME17T,TLSE17T,TLOE17T,TLYE17T 2002-09-25 8 /Gb7/G20TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. /Gb7/G20The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. /Gb7/G20Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. /Gb7/G20The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. /Gb7/G20The information contained herein is subject to change without notice. 000707EACRESTRICTIONS ON PRODUCT USE