TLX9000

TLX9000 TOSHIBA | Alldatasheet

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© 2019 Toshiba Electronic Devices & Storage Corporation TOSHIBA Photocoupler IR LED & Photo−Transistor TLX9000 〇 Various Controllers 〇 Signal transmission between different circuit potential 〇 HEV (Hybrid Electric Vehicle) and EV (Electric Vehicle) Applications The TOSHIBA TLX9000 mini-flat photocoupler is suitable for surface-mount assembly. The TLX9000 consists of an infrared LED optically coupled to a photo-transistor. This photocoupler can be used to the extensive applications. It is generic speed transistor output.  Collector-emitter voltage: 40 V (min)  Current transfer ratio: 100 % (min) to 900 %(max)  Isolation voltage: 3750 Vrms (min)  AEC-Q101 qualified Pin Configuration Unit: mm JEDEC ― JEITA ― TOSHIBA 11−3C1 Weight: 0.05 g (typ.) 1: Anode 2: Cathode 3: Emitter 4: Collector RBE

© 2019 Toshiba Electronic Devices & Storage Corporation Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit LED Forward current IF 30 mA Forward current (Ta=125°C) IF 18 mA Forward current derating (Ta ≥ 108 °C) ΔIF / °C -0.7 mA / °C Pulse forward current (Note 1) IFP 1 A Input Power Dissipation PD 50 mW Input Power Dissipation Derating (Ta≥50°C) ΔPD/°C -0.5 mW/°C Reverse voltage VR 5 V Detector Collector-emitter voltage VCEO 40 V Emitter-collector voltage VECO 5 V Collector current IC 50 mA Collector power dissipation PC 150 mW Collector power dissipation derating (Ta ≥ 50°C) ΔPC / °C -1.5 mW / °C Operating temperature range Topr -40 to 125 °C Storage temperature range Tstg -55 to 150 °C Lead soldering temperature (10 s) Tsol 260 °C Total package power dissipation PT 200 mW Total package power dissipation derating (Ta ≥ 50°C) ΔPT / °C -2.0 mW / °C Isolation voltage (R.H.≤60%, AC 60 s) (Note 2) BVS 3750 Vrms Note : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width PW ≤ 100μs, 100 Hz Note 2: This device is considered as a two terminal device: Pins 1 and 2 are shorted together, and pins 3 and 4 are shorted together. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Supply voltage VCC ― 5 24 V Forward current IF ― 10 15 mA Collector current IC ― 1 10 mA Operating temperature Topr -40 ― 125 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document.

© 2019 Toshiba Electronic Devices & Storage Corporation Electrical Characteristics (Unless otherwise specified Ta = -40 to 125°C) Characteristic Symbol Test Condition Min Typ. Max Unit LED Forward voltage VF IF = 10 mA, Ta=25 °C 1.1 1.25 1.4 V IF = 10 mA 1.0 — 1.55 V Reverse current IR VR = 5 V ― — 10 μA Capacitance CT V = 0 V, f = 1 MHz, Ta=25 °C — 35 — pF Detector Collector-emitter breakdown voltage V(BR) CEO IC = 0.5 mA 40 — — V Emitter-collector breakdown voltage V(BR) ECO IE = 0.5 mA 5 — — V Collector dark current ICEO VCE = 24 V, Ta=25 °C — — 100 nA VCE = 24 V, Ta=105 °C — 0.1 5 μA VCE = 24 V, Ta=125 °C — 1 10 μA Capacitance (collector to emitter) CCE V = 0 V, f = 1 MHz, Ta=25 °C — 10 — pF Coupled Electrical Characteristics (Unless otherwise specified Ta = -40 to 125°C) Characteristic Symbol Test Condition Min Typ. Max Unit Current transfer ratio IC / IF IF = 5 mA, VCE = 5 V 20 — 900 IF = 5 mA, VCE = 5 V, Ta=25 °C 100 — 900 Saturated CTR IC / IF (sat) IF = 1 mA, VCE = 0.4 V, Ta=25 °C 30 — — % Collector-emitter saturation voltage VCE (sat) IC = 2.4 mA, IF = 8 mA, Ta=25 °C — — 0.4 V IC = 0.2 mA, IF = 1 mA, Ta=25 °C — — 0.4 Off-state collector current IC (off) VF = 0.7V, VCE = 24 V , Ta=25 °C — — 10 μA Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Capacitance (input to output) CS VS = 0 V, f = 1 MHz — 0.8 ― pF Isolation resistance RS VS = 500 V, R.H. ≤ 60 % 5×1010 1014 — Ω Isolation voltage BVS AC, 60 s 3750 — — Vrms Note : Device considered a two terminal device: Pins 1 and 2 shorted together, and pins 3 and 4 shorted together.

© 2019 Toshiba Electronic Devices & Storage Corporation Switching Characteristics (Unless otherwise specified Ta = -40 to 125°C) Characteristic Symbol Test Condition Min Typ. Max Unit Turn-on time tON RL = 10 kΩ (Note1) VCC = 5 V, IF = 2 mA 1 15 100 μs Storage time ts — 20 200 Turn-off time tOFF 1 50 300 Note 1: Switching time test circuit

© 2019 Toshiba Electronic Devices & Storage Corporation Characteristic Curves (Note) -40 -20 0 20 40 60 80 100 120 140 Input fowrard current IF (mA) Ambient temperature Ta (℃) This curve shows the maximum limit to the input forward current. 100 150 200 -40 -20 0 20 40 60 80 100 120 140 Collector power dissipation PC (mW) Ambient temperautre Ta (℃) This curve shows the maximum limit to the collector power dissipation. 0 0.5 1 Collector current IC (mA) Collector-emitter voltage VCE (V) Ta = 25 ℃ 0 2 4 6 8 10 Collector current IC (mA) Collector-emitter voltage VCE (V) 01_IC-VCE Ta = 25 ℃ IF = 30 mA IF = 20 mA IF = 10 mA IF = 5 mA IF = 2 mA 100 1000 0.001 0.01 0.1 1 Input forward current (pulsed) IFP (mA) Duty cycle ratio DR This curve shows the maximum limit to the input forward current (pulsed). Pulse width ≤ 100µs Ta = 25 ℃ 0.1 100 0.8 1 1.2 1.4 1.6 Input forward current IF (mA) Input forward voltage VF (V) 01_IF-VF Ta = 25 ℃ Ta = 125 ℃ Ta = -40 ℃ IF – Ta PC – Ta IFP – DR IF – VF IC – VCE IC – VCE

© 2019 Toshiba Electronic Devices & Storage Corporation -40 -20 0 20 40 60 80 100 120 140 Collector current IC (mA) Ambient temperature Ta (℃) 01_IC-Ta VCE = 5 V 0.01 0.1 100 0.1 1 10 100 Collector current IC (mA) Input forward current IF (mA) 01_IC-IF Ta = 25 ℃ VCE = 0.4 V VCE = 5 V 100 200 300 400 500 600 0.1 1 10 100 Current transfer ratio IC / IF (%) Input forward current IF (mA) Ta = 25 ℃ VCE = 0.4 V VCE = 5 V 0.1 0.2 0.3 -40 -20 0 20 40 60 80 100 120 140 Collector-emitter saturation voltage VCE(sat) (V) Ambient temperature Ta (℃) 01_VCE(sat)-Ta IF = 8 mA, I C = 2.4 mA IF = 1 mA, I C = 0.2 mA 0.001 0.01 0.1 100 1000 -40 -20 0 20 40 60 80 100 120 140 Collector dark current ICEO (nA) Ambient temperature Ta (℃) 01_ICEO-Ta VCEO = 24 VVCEO = 24 V 100 -40 -20 0 20 40 60 80 100 120 140 Switching time tON, tOFF (μs) Ambient temperature Ta (℃) 0x_tON,tOFF-Ta IF = 2 mA, VCC = 5 V, RL = 10 kΩ toff ton IC – Ta IC / IF – IF VCE(sat) – Ta ICEO – Ta ton, toff – Ta IC – IF ICEO (μA)

© 2019 Toshiba Electronic Devices & Storage Corporation Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise specified. 100 1 10 100 Switching time tON, tOFF (μs) Load resistance RL (kΩ) 0x_tON,tOFF-RL IF = 2 mA, Vcc = 5 V, Ta = 25 ℃ toff ton 0.1 100 1 10 100 Switching time tON, tOFF (μs) Input forward current IF (mA) 0x_tON,tOFF-IF VCC = 5 V RL = 10 kΩ Ta = 25 ℃ toff ton ton, toff – RL ton, toff – IF

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