TLW.8600 TI | Alldatasheet

Document overview

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Technical content

Features

 Utilizing one of the world’s brightest (AS) AllnGaP technologies  High luminous flux  Supreme heat dissipation: R thJP is 90 K/W  High operating temperature: T j = + 125 °C  Meets SAE and ECE color requirements for the automobile industry for color red  Packed in tubes for automatic insertion  Luminous flux, forward voltage and color categorized for each tube  Small mechanical tolerances allow precise usage of external reflectors or lightguides

Applications

 Exterior lighting  Dashboard illumination  Tail-, Stop - and Turn Signals of motor vehicles  Replaces small incandescent lamps  Traffic signals and signs Parts Table Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified TLWR8600 , TLWY8600 , Part Color, Luminous Intensity Angle of Half Intensity (±ϕ) Technology TLWR8600 Red, φV > 2000 mlm 30 AllnGaP on GaAs TLWY8600 Y ellow, φV > 2000 mlm 30 AllnGaP on GaAs Parameter Test condition Symbol Value Unit Reverse voltage IR = 100 µA VR 10 V DC forward current Tamb ≤ 85 °C IF 70 mA Surge forward current tp ≤ 10 µs IFSM 1 A Power dissipation Tamb ≤ 85 °C PV 187 mW Junction temperature Tj 125 °C Operating temperature range Tamb - 40 to + 110 °C

www.vishay.com Document Number 83168 Rev. A4, 22-Apr-03 VISHA YTLW.8600 Vishay Semiconductors Optical and Electrical Characteristics Tamb = 25 °C, unless otherwise specified Red TLWR8600 Yellow TLWY8600 Storage temperature range Tstg - 55 to + 110 °C Soldering temperature t ≤ 5 s, 1.5 mm from body preheat temperature 100 °C/ 30 sec. Tsd 260 °C Thermal resistance junction/ ambient with cathode heatsink of 70 mm2 RthJA 200 K/W Parameter Test condition Symbol Min Typ. Max Unit Total flux IF = 70 mA, RthJA = 200 °K/W φV 2000 3000 mlm Luminous intensity/Total flux IF = 70 mA, RthJA = 200 °K/W IV/φV 0.8 mcd/mlm Dominant wavelength IF = 70 mA, RthJA = 200 °K/W λd 611 615 634 nm Peak wavelength IF = 70 mA, RthJA = 200 °K/W λp 624 nm Angle of half intensity IF = 70 mA, RthJA = 200 °K/W ϕ ± 30 deg Total included angle 90 % of Total Flux Captured ϕ0.9V 75 deg Forward voltage IF = 70 mA, RthJA = 200 °K/W VF 1.83 2.2 2.67 V Reverse voltage IR = 10 µA VR 10 20 V Junction capacitance VR = 0, f = 1 MHz Cj 17 pF Parameter Test condition Symbol Min Typ. Max Unit Total flux IF = 70 mA, RthJA = 200 °K/W φV 2000 3000 mlm Luminous intensity/Total flux IF = 70 mA, RthJA = 200 °K/W IV/φV 0.8 mcd/mlm Dominant wavelength IF = 70 mA, RthJA = 200 °K/W λd 585 590 597 nm Peak wavelength IF = 70 mA, RthJA = 200 °K/W λp 594 nm Angle of half intensity IF = 70 mA, RthJA = 200 °K/W ϕ ± 30 deg Total included angle 90 % of Total Flux Captured ϕ0.9V 75 deg Forward voltage IF = 70 mA, RthJA = 200 °K/W VF 1.83 2.1 2.67 V Reverse voltage IR = 10 µA VR 10 15 V Junction capacitance VR = 0, f = 1 MHz Cj 17 pF Parameter Test condition Symbol Value Unit

www.vishay.com Document Number 83168 Rev. A4, 22-Apr-03 VISHA YTLW.8600 Vishay Semiconductors Package Dimensions in mm 16004

VISHA Y TLW.8600 Document Number 83168 Rev. A4, 22-Apr-03 Vishay Semiconductors www.vishay.com Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423