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(TOP VIEW) DESCRIPTION/ORDERING INFORMATION TLV1012 www.ti.com SLCS154A OCTOBER 2008 REVISED NOVEMBER 2008 AMPLIFIER FOR HIGH-GAIN TWO-WIRE MICROPHONES Cellular Phones Supply Voltage: V to V Headsets Supply Current: 180 µ A Mobile Communications Signal-to-Noise Ratio (A-Weighted): dB Automotive Accessories Output Voltage Noise (A-Weighted): dBV PDAs Total Harmonic Distortion: 0.013% Accessory Microphone Products Voltage Gain: 15.6 dB The TLV1012 is an audio amplifier series for small-form-factor electret microphones. This two-wire amplifier is designed to replace JFET amplifiers currently in use. The TLV1012 is ideally suited for noise, such as in cellular communications. The TLV1012 audio amplifier is specified for operation over a 2.2-V to 5-V supply voltage range with a fixed gain of 15.6 dB. The device offers excellent THD, gain accuracy, and temperature stability compared to JFET microphones. The TLV1012 enables a two-pin electret microphone solution, which provides direct pin-to-pin compatibility with the existing JFET market. The TLV1012 is offered in a space-saving four-terminal ultra-thin lead-free package (YDC) and is ideally suited for the form factor of miniature electret microphone packages. The TLV1012 is characterized for operation over a free-air temperature range of C to ORDERING INFORMATION (1) T A A V (2) PACKAGE (3) ORDERABLE PART NUMBER TOP-SIDE MARKING NanoStar WCSP C to C 15.6 dB Reel of 3000 TLV1012-15YDCR Y38 (DSBGA) YDC (1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI web site at www.ti.com (2) Typical value measured at V DD 2.2 V IN mV, R L 2.2 k Ω C L 2.2 µ F (3) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging Please be aware that an important notice concerning availability, standard warranty, and use in critical sheet. PRODUCTION DATA information is current as of publication date. Copyright 2008, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

(1) RECOMMENDED OPERATING CONDITIONS 2.2-V ELECTRICAL CHARACTERISTICS TLV1012 SLCS154A OCTOBER 2008 REVISED NOVEMBER 2008 www.ti.com FUNCTIONAL BLOCK DIAGRAM over operating free-air temperature range (unless otherwise noted) V CC Supply voltage 0.3 V to 5.5 V V IN Input voltage 0.3 V to 0.3 V θ JA Thermal impedance, junction to free air (2) 230.47 C/W T A Operating free-air temperature range C to C T stg Storage temperature range C to 150 C (1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) Package thermal impedance is calculated according to JESD 51-5. MIN MAX UNIT V CC Supply voltage V T A Operating free-air temperature C V CC 2.2 V IN mV, R L 2.2 k Ω and C L 2.2 µ F (unless otherwise noted) PARAMETER TEST CONDITIONS T J MIN TYP MAX UNIT C 150 240 I CC Supply current V IN GND µ A Full range 280 SNR Signal-to-noise ratio f kHz, V IN mV PP A-weighted C dB V IN Maximum input signal f kHz, THD+N C 100 mV PP C 1.70 1.87 1.94 V OUT Output voltage V IN GND V Full range 1.63 2.00 f LOW Lower 3-dB roll-off frequency R SOURCE Ω C Hz f HIGH Upper 3-dB roll-off frequency R SOURCE Ω C kHz V N Output noise A-weighted C dBV THD Total harmonic distortion f kHz, V IN mV PP C 0.013 C IN Input capacitance C pF Z IN Input impedance C 1000 G Ω C 14.0 15.6 16.9 A V Gain f kHz, R SOURCE Ω dB Full range 13.1 17.5 Submit Documentation Feedback Copyright 2008, Texas Instruments Incorporated Product Folder Link(s): TLV1012

www.ti.com SLCS154A OCTOBER 2008 REVISED NOVEMBER 2008 V CC V IN mV, R L 2.2 k Ω and C L 2.2 µ F (unless otherwise noted) PARAMETER TEST CONDITIONS T J MIN TYP MAX UNIT C 160 300 I CC Supply current V IN GND µ A Full range 325 SNR Signal-to-noise ratio f kHz, V IN mV PP A-weighted C dB V IN Maximum input signal f kHz, THD+N C 100 mV PP C 4.34 4.56 4.74 V OUT Output voltage V IN GND V Full range 4.28 4.80 f LOW Lower 3-dB roll-off frequency R SOURCE Ω C Hz f HIGH Upper 3-dB roll-off frequency R SOURCE Ω C 150 kHz V N Output noise A-weighted C dBV THD Total harmonic distortion f kHz, V IN mV PP C 0.013 C IN Input capacitance C pF Z IN Input impedance C 1000 G Ω C 14.0 15.6 16.9 A V Gain f kHz, R SOURCE Ω dB Full range 13.1 17.5 Copyright 2008, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Link(s): TLV1012

-30 -25 -20 -15 -10 Frequency – Hz Gain – dB -180 -135 -90 -45 135 180 Phase – ° 10 100 1k 10k 100k 1M 0.1 0.2 0.3 0.4 0.5 0.6 10 100 1,000 10,000 100,000 Frequency – Hz THD+N – % VS = 2.2 V VIN = 18 mVpp 10 100 1k 10k 100k 0.2 0.4 0.6 0.8 1.2 1.4 1.6 0 20 40 60 80 100 120 Input Amplitude – mVpp THD+N – % VCC = 5 V 0.2 0.4 0.6 0.8 1.2 1.4 1.6 0 20 40 60 80 100 120 Input Amplitude – mVpp THD+N – % VCC = 2.2 V TLV1012 SLCS154A OCTOBER 2008 REVISED NOVEMBER 2008 www.ti.com CLOSED LOOP GAIN AND PHASE TOTAL HARMONIC DISTORTION NOISE vs vs FREQUENCY FREQUENCY TOTAL HARMONIC DISTORTION NOISE TOTAL HARMONIC DISTORTION NOISE vs vs INPUT VOLTAGE INPUT VOLTAGE Figure Submit Documentation Feedback Copyright 2008, Texas Instruments Incorporated Product Folder Link(s): TLV1012

-150 -140 -130 -120 -110 -100 -90 -80 10 100 1,000 10,000 100,000 Frequency – Hz Output Voltage Noise – dBV/rtHz 10 100 1k 10k 100k TLV1012 www.ti.com SLCS154A OCTOBER 2008 REVISED NOVEMBER 2008 TYPICAL CHARACTERISTICS (continued) OUTPUT VOLTAGE NOISE vs FREQUENCY Copyright 2008, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Link(s): TLV1012

-70 -60 -50 -40 -30 -20 -10 10 100 1000 10000 100000 Frequency – Hz Filter – dBV TLV1012 SLCS154A OCTOBER 2008 REVISED NOVEMBER 2008 www.ti.com The TLV1012 provides outstanding gain compared to JFET amplifiers and still maintains the same ease of implementation, with improved gain, linearity, and temperature stability. A high gain eliminates the need for extra external components. The TLV1012 is offered in the space-saving YDC package, which fits perfectly into the metal can of a microphone. This allows the TLV1012 to be placed on the PCB inside the microphone. The bottom side of the PCB usually shows a bull's-eye pattern, where the outer ring, which is shorted to the metal can, should be connected to the ground. The center dot on the PCB is connected to the V CC through a resistor. This phantom biasing allows both supply voltage and output signal on one connection. Figure Built-In Gain The human ear has a frequency range from Hz to about kHz. Within this range the sensitivity of the human ear is not equal for each frequency. To approach the hearing response, weighting filters are introduced. One of those filters is the A-weighted filter. The A-weighted filter is usually used in signal-to-noise ratio measurements, where sound is compared to device noise. It improves the correlation of the measured data to the signal-to-noise ratio perceived by the human ear. Figure A-Weighted Filter Submit Documentation Feedback Copyright 2008, Texas Instruments Incorporated Product Folder Link(s): TLV1012

(dBPa) –94 dB Sensitivity (dBV/Pa) Sound Pressure (dBSPL) Voltage (dBV) TLV1012 www.ti.com SLCS154A OCTOBER 2008 REVISED NOVEMBER 2008 The overall noise of the TLV1012 is measured within the frequency band from Hz to kHz using an A-weighted filter. The input of the TLV1012 is connected to ground with a 5-pF capacitor. Figure Noise Measurement The signal-to-noise ratio (SNR) is measured with a kHz input signal of mV PP using an A-weighted filter. This represents a sound pressure level of dBSPL. No input capacitor is connected. The volume of sound applied to a microphone is usually stated as the pressure level with respect to the threshold of hearing of the human ear. The sound pressure level in decibels is defined by: Sound pressure level (dB) log P m O Where P m is the measured sound pressure, and P O is the threshold of hearing (20 µ Pa). To calculate the resulting output voltage of the microphone for a given sound pressure level, the sound pressure in dBSPL needs to be converted to the absolute sound pressure in dBPa. This is the sound pressure level in decibels, which is referred to as Pascal (Pa). The conversion is given by: dBPa dBSPL log µ Pa dBPa dBSPL dB Translation from absolute sound pressure level to a voltage is specified by the sensitivity of the microphone. A conventional microphone has a sensitivity of dBV/Pa. Figure dB SPL to dBV Conversion For example, busy traffic is dBSPL: V OUT dBV This is equivalent to 1.13 mV PP Because the TLV1012-15 has a gain of (15.6 dB) over the JFET, the output voltage of the microphone is 6.78 mV PP By replacing the JFET with the TLV1012-15, the sensitivity of the microphone is 28.4 dBV/Pa 15.6). Copyright 2008, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Link(s): TLV1012

-30 -25 -20 -15 -10 Frequency – Hz Gain – dB -180 -135 -90 -45 135 180 Phase – ° 10 100 1k 10k 100k 1M TLV1012 SLCS154A OCTOBER 2008 REVISED NOVEMBER 2008 www.ti.com To reduce noise on the output of the microphone, a low-cut filter is implemented in the TLV1012. This filter reduces the effect of wind and handling noise. It is also helpful to reduce the proximity effect in directional microphones. This effect occurs when the sound source is very close to the microphone. The lower frequencies are amplified, which gives a bass sound. This amplification can cause an overload, which results in a distortion of the signal. Figure Gain and Phase vs Frequency The TLV1012 is optimized to be used in audio-band applications. The TLV1012 provides a flat gain response within the audio band and offers linearity and excellent temperature stability. Submit Documentation Feedback Copyright 2008, Texas Instruments Incorporated Product Folder Link(s): TLV1012

www.ti.com SLCS154A OCTOBER 2008 REVISED NOVEMBER 2008 Noise pick-up by a microphone in cell phones is a well known problem. A conventional JFET circuit is sensitive for noise pick-up because of its high output impedance, which is usually around 2.2 k Ω RF noise is among other noises caused by nonlinear behavior. The nonlinear behavior of the amplifier at high frequencies, well above the usable bandwidth of the device, causes AM demodulation of high-frequency signals. The AM modulation contained in such signals folds back into the audio band, thereby disturbing the intended microphone signal. The GSM signal of a cell phone is such an AM-modulated signal. The modulation frequency of 216 Hz and its harmonics can be observed in the audio band. This kind of noise is called bumblebee noise. RF noise caused by a GSM signal can be reduced by connecting two external capacitors to ground (see Figure One capacitor reduces the noise caused by the 900-MHz carrier, and the other reduces the noise caused by MHz. Figure RF Noise Reduction Copyright 2008, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Link(s): TLV1012

Orderable Device Status(1) Package Type Package Drawing Pins Package Qty Eco Plan(2) Lead/Ball FinishMSL Peak Temp (3) TLV1012-15YDCR ACTIVE DSBGA YDC 4 3000 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM (1)The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2)Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontentfor the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS):TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt):This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br):TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. PACKAGE OPTION ADDENDUM www.ti.com 24-Oct-2008 Addendum-Page 1

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