TLRMH20T TOSHIBA | Alldatasheet

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TLRMH20T,TLSH20T,TLOH20T,TLYH20T 2002-01-18 1 TOSHIBA InGaA ℓP LED TLRMH20T,TLSH20T,TLOH20T,TLYH20T Panel Circuit Indicator /Gb7/G205 mm package /Gb7/G20InGaAℓP technology /Gb7/G20All plastic mold type /Gb7/G20Transparent lens /Gb7/G20Lineup: 3colors (red, orange, yellow) /Gb7/G20High intensity light emission /Gb7/G20Excellent low current light output /Gb7/G20Applications: traffic signals, safety equipment /Gb7/G20Straight leads type is also available TLRMH20TP, TLSH20TP, TLOH20TP, TLYH20TP Line-Up Product Name Color Material TLRMH20T Red TLSH20T Red TLOH20T Orange TLYH20T Yellow PInGaA/G6c Maximum Ratings (Ta /G3d/G3d/G3d/G3d 25°C) Product Name Forward Current IF (mA) Reverse Voltage VR (V) Power Dissipation PD (mW) Operating Temperature Topr (°C) Storage Temperature Tstg (°C) TLRMH20T TLSH20T TLOH20T TLYH20T 50 4 120 /G2d40~100 /G2d40~120 Unit: mm JEDEC ― JEITA ― TOSHIBA ― Weight: 0.31 g

TLRMH20T,TLSH20T,TLOH20T,TLYH20T 2002-01-18 2 Electrical and Optical Characteristics (Ta /G3d/G3d/G3d/G3d 25°C) Typ. Emission Wavelength Luminous Intensity IV Forward Voltage VF Reverse Current IR Product Name /G6cd /G6cP /G44/G6c I F Min Typ. I F Typ. Max I F Max V R TLRMH20T 626 (636) 13 20 2720 9000 20 1.9 2.4 20 50 4 TLSH20T 613 (623) 13 20 4760 11000 20 2.0 2.4 20 50 4 TLOH20T 605 (612) 13 20 4760 15000 20 2.0 2.4 20 50 4 TLYH20T 587 (590) 13 20 4760 13000 20 2.0 2.4 20 50 4 Unit nm mA mcd mA V mA /G6dA V Precautions Please be careful of the following: /Gb7/G20Soldering temperature: 260°C max, soldering time: 3 s max (soldering portion of lead: below the lead stopper) /Gb7/G20If the lead is formed, the lead should be formed up to 5 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. /Gb7/G20This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light.

TLRMH20T,TLSH20T,TLOH20T,TLYH20T 2002-01-18 3 TLRMH20T 2.0 1.6 2.3 1.7 2.1 100 1.8 1.9 2.2 Ta /G3d 25°C Relative luminous intensity Forward voltage V F (V) IF – VF Forward current I F (mA) Forward current I F (mA) IV – IF V Luminous intensity I V ( m c d ) Case temperature Tc (°C) IV – Tc Relative luminous intensity I V Wavelength /G6c ( n m ) Relative luminous intensity – Wavelength Ambient temperature Ta (°C) IF – Ta Allowable forward current I F (mA) Radiation pattern 30/Gb0 0/Gb0 60/Gb0 90° 90/Gb0 30/Gb0 60/Gb0 80/Gb0 70/Gb0 50/Gb0 40/Gb0 20/Gb0 10/Gb0 70/Gb0 80/Gb0 50/Gb0 40/Gb0 20/Gb010/Gb0 400 120 20 60 80 100 0.1 0.3 0.5 20 /G2d20 800 40 60 30000 3000 5000 300 500 10 1 100 100 3 5 30 50 1000 Ta /G3d 25°C 10000 50000 620580 700 0.8 0.6 1.0 0.2 0.4 600 640 660 680 IF /G3d 20 mA Ta /G3d 25°C Ta /G3d 25°C

TLRMH20T,TLSH20T,TLOH20T,TLYH20T 2002-01-18 4 TLSH20T Relative luminous inten Forward voltage V F (V) IF – VF Forward current I F (mA) IV – IF Luminous intensity I V ( m c d ) Case temperature Tc (°C) IV – Tc Wavelength /G6c (nm) Relative luminous intensity – Wavelength Ambient temperature Ta (°C) IF – Ta Allowable forward current I F (mA) Radiation pattern Forward current I F (mA) Relative luminous intensity I V 0.8 0.6 1.0 0.2 0.4 IF /G3d 20 mA Ta /G3d 25°C 600560 680580 620 640 660 400 120 20 60 80 100 100 Ta /G3d 25°C 20 /G2d20 80 0.1 0.3 0.5 0 40 60 30/Gb0 0/Gb0 60/Gb0 90° 90/Gb0 30/Gb0 60/Gb0 80/Gb0 70/Gb0 50/Gb0 40/Gb0 20/Gb0 10/Gb0 70/Gb0 80/Gb0 50/Gb0 40/Gb0 20/Gb010/Gb0 10 1 100 100 3 5 30 50 1000 Ta /G3d 25°C 10000 50000 30000 3000 5000 300 500 Ta /G3d 25°C

TLRMH20T,TLSH20T,TLOH20T,TLYH20T 2002-01-18 5 TLOH20T 100 Ta /G3d 25°C Radiation pattern Relative luminous intensity Forward voltage V F (V) IF – VF Forward current I F (mA) Forward current I F (mA) IV – IF Luminous intensity I V ( m c d ) Case temperature Tc (°C) IV – Tc Relative luminous intensity I V Wavelength /G6c (nm) Relative luminous intensity – Wavelength Ambient temperature Ta (°C) IF – Ta Allowable forward current I F (mA) IF /G3d 20 mA Ta /G3d 25°C 580540 660 0.8 0.6 1.0 0.2 0.4 560 600 620 640 400 120 20 60 80 100 30/Gb0 0/Gb0 60/Gb0 90° 90/Gb0 30/Gb0 60/Gb0 80/Gb0 70/Gb0 50/Gb0 40/Gb0 20/Gb0 10/Gb0 70/Gb0 80/Gb0 50/Gb0 40/Gb0 20/Gb010/Gb0 20 /G2d20 80 0.1 0.3 0.5 0 40 60 10 1 100 100 3 5 30 50 1000 Ta /G3d 25°C 10000 50000 30000 3000 5000 300 500 Ta /G3d 25°C

TLRMH20T,TLSH20T,TLOH20T,TLYH20T 2002-01-18 6 TLYH20T Relative luminous intensity Forward voltage V F (V) IF – VF Forward current I F (mA) Forward current I F (mA) IV – IF Luminous intensity I V ( m c d ) Case temperature Tc (°C) IV – Tc Relative luminous intensity I V Wavelength /G6c (nm) Relative luminous intensity – Wavelength Ambient temperature Ta (°C) IF – Ta Allowable forward current I F (mA) Radiation pattern 100 Ta /G3d 25°C 20 /G2d20 800 40 60 0.1 0.3 0.5 400 120 20 60 80 100 10 1 100 100 3 5 30 50 1000 Ta /G3d 25°C 10000 50000 30000 3000 5000 300 500 IF /G3d 20 mA Ta /G3d 25°C 580540 660 0.8 0.6 1.0 0.2 0.4 560 600 620 640 30/Gb0 0/Gb0 60/Gb0 90° 90/Gb0 30/Gb0 60/Gb0 80/Gb0 70/Gb0 50/Gb0 40/Gb0 20/Gb0 10/Gb0 70/Gb0 80/Gb0 50/Gb0 40/Gb0 20/Gb010/Gb0 Ta /G3d 25°C

TLRMH20T,TLSH20T,TLOH20T,TLYH20T 2002-01-18 7 /Gb7/G20TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. /Gb7/G20The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. /Gb7/G20Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. /Gb7/G20The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. /Gb7/G20The information contained herein is subject to change without notice. 000707EACRESTRICTIONS ON PRODUCT USE