TLS106 STMICROELECTRONICS | Alldatasheet

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a , MICROELECTRONICS TLS 106 aU SENSITIVE GATE SCR a

FEATURES

= LOWigrs 200 pA « LOWIHs 5mA a 4 > K = Hyams) =4A a DESCRIPTION G , K The TLS 106 Silicon Controlled Rectifiers are high A performance MESA diffused PNPN devices glass e passivated sensitive gate technology. These parts are intended to general purpose TL switching and phase control application. (Plastic) ABSOLUTE RATINGS (limiting values) [symm [Parmeter | Mate | | pime emem, [eee (180° conduction angle) HAV) Average on-state current Tl= 25°C A (180° conduction angle, single phase circuit) TSM Non repetitive surge peak on-state current A (Jj initial = 25°C ) [oa [eee wom Critical rate of rise of on-state current Alus Gate supply: |G = 10 mA dig/dt = 0.1 Aus Tstg Storage and operating junction temperature range - 40 to+ 150 °C Tj - 40 to+ 110 °C Ti Maximum lead temperature for soldering during 4 s at 4.5 mm °c from case peo VDRM Repetitive peak off-state voltage 100 Vv Vrarm |= 110°C Rqx=1Ka March 1995 14 ms 7929237 0075949 4be A

a THERMAL RESISTANCES [somos | Parmer | vate | nt | Junction to ambient on printed circuit with Cu surface 1cm2 | | ow | GATE CHARACTERISTICS (maximum values) PG (AV)=0.2W PGM=3W (tp =20 ps) IFGM=1.2A (p= 20us) VRGM= 5V.

ELECTRICAL CHARACTERISTICS

[sme [escaniow —vame Feo fvonvon masta socom [ae roe | mw [env | VD=VDRM_ IG= 10mA Tj=25°C TYP digfdt = 0.1A/us Fim [meee grams | trave fwe [ ev \\ Vv Rated RGK =1kQ. mm pe i Linear slope up to Vp=67%VpRM Tj= 110°C 10 Vius RGK =1kQ. CG =0.1pF Vp=67%VDRM_ ITM=4A_ VpR= 10V Ti- 110°C | TYP ys ditwdt=10 Aus dVp/dt= 2Vius RGK =1ka 214 SYA, iso sarcones mm 7929237 0075950 144 mm

Fig.1 : Maximum average power dissipation versus Fig.2 : Correlation between maximum average power average on-state current. dissipation and maximum allowable temperatures (Tamb and Tlead). P (Ww) Pw) Tiead ('C) 7 Tr . f 10 ae : en EH S Tee) Kee Oe [7 40 A LSE on ‘00 1 PNT | ° V LL1 . | a ALAA a+ 20 a TNT TT Ife Z

1 NWGerew «| [| areca INT TT le

_hrre* PREG [foo | Clr 30° ' Cy) Tamb (°C) 100 A! [ [tm om PEAK [nS 0 05 1 15 2 25 3 35 4 0 20 49 60 80 100 120 140 Fig.3 : Average on-state current versus leads Fig.4 : Thermal transient impedance junction to temperature. ambient versus pulse duration. "yay (4) 2th j-a (CO/W) COT) Soi

4 SI 40 | f| i i

pe 30 il | BoE) UTICA a we 20 yA caer ASS Th

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fil | reo | | LN TTT 10 20 30 40 50 60 70 BO 90 100110120 Sear t0e-00 oor —=«L0eo | t0E0S | AOEHO Fig.5 : Relative variation of gate tigger current versus Fig.6 : Non repetitive surge peak on-state current junction temperature. versus number of cycles. IgtT il ~ INIT] . 1 (ay igtTP2ECT infT}-25°C) on STITT Tj initial = 26°C SXCCPPT erry so oe ll SUNS TTT TT iH LENCO 20 ine SONAR Bn ECRORR TATA ° Cok | web EE ET eco oo eo SSS EH | Number of eyes Ba o LL ea 0 %40-20-20-10 0 10 20 30 40 60 60 70 BO 90 100110 1 10 100 1000 , ROE TOMES Mi 7529237 0075951 010 me

Fig.7 : Non repetitive surge peak on-state current for a Fig.8 : On-state characteristics (maximum values). sinusoidal pulse with width : t < 10 ms, and corresponding value of It. Irsm (A). 1"t (A's) Vay (A) THinita = 25'¢ — FF SSS SS SS 1 [| UT Cd [| Tj initial eS ST A SS

100 Se =| 26°C es a =

SS LEE i | ter | — ee = a OO a ll |__| ee eT max Tj max as a SL [7y fj tt PT LL PL | vege | 1 1 _ 1 2 5 10 1 2 8 4 § 6 7 8 PACKAGE MECHANICAL DATA TL Plastic > A Ca * | Mitimeters | Inches | ] E : | | [an [a [wn | |B | 755 | 205 | o297 | 0317 F 5 [c¢ [i27[ | osoo| | [F | 675 | 7.25 | 0266 | 0.206 | Y a [1 [075 [ 02s | 0.029 | 0033 Hj Marking : type number Weight : 0.8 g Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or othewise under any patent or patent rights of SGS-THOMSON Microelectronics. ‘Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized tor use as critical components in lite support devices or systems without ‘express written approval of SGS-THOMSON Microelectronics. © 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. $GS-THOMSON Microelectronics GROUP OF COMPANIES: ‘Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - ‘Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 414 0. icon Eres Mm 7929237 0075952 TS?